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Journal Articles

Twin density and twin thickness evolution in sputtered Al–Mg alloys

X. Y. Sheng, N. A. Richter, A. Y. Shang, H. Wang, X. Zhang
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 205301 (2023)
https://doi.org/10.1063/5.0142677
Published: May 2023
View article titled, Twin density and twin thickness evolution in sputtered Al–Mg alloys
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Includes: Supplementary data
Journal Articles

Control of the Schottky barrier height in monolayer WS2 FETs using molecular doping

Siyuan Zhang, Hsun- Jen Chuang, Son T. Le, Curt A. Richter, Kathleen M. McCreary, Berend T. Jonker, Angela R. Hight Walker, Christina A. Hacker
Journal: AIP Advances
AIP Advances 12, 085222 (2022)
https://doi.org/10.1063/5.0101033
Published: August 2022
View article titled, Control of the Schottky barrier height in monolayer WS<sub>2</sub> FETs using molecular doping
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Journal Articles

Exploring the deformation behavior of nanotwinned Al–Zr alloy via in situ compression

Editor’s Pick
N. A. Richter, M. Gong, Y. F. Zhang, T. Niu, B. Yang, J. Wang, H. Wang, X. Zhang
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 065104 (2022)
https://doi.org/10.1063/5.0098497
Published: August 2022
View article titled, Exploring the deformation behavior of nanotwinned Al–Zr alloy via <em>in situ</em> compression
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Includes: Supplementary data
Journal Articles

High-performance dual-gate graphene pH sensors

Son T. Le, Seulki Cho, Alexander Zaslavsky, Curt A. Richter, Arvind K. Balijepalli
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 263701 (2022)
https://doi.org/10.1063/5.0086049
Published: June 2022
View article titled, High-performance dual-gate graphene pH sensors
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Journal Articles

Digital electronics using dielectric elastomer structures as transistors

FeaturedScilight
L. Ciarella, A. Richter, E.-F. M. Henke
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 261901 (2021)
https://doi.org/10.1063/5.0074821
Published: December 2021
View article titled, Digital electronics using dielectric elastomer structures as transistors
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Journal Articles

Impact ionization-induced bistability in CMOS transistors at cryogenic temperatures for capacitorless memory applications

FeaturedScilight
A. Zaslavsky, C. A. Richter, P. R. Shrestha, B. D. Hoskins, S. T. Le, A. Madhavan, J. J. McClelland
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 043501 (2021)
https://doi.org/10.1063/5.0060343
Published: July 2021
View article titled, Impact ionization-induced bistability in CMOS transistors at cryogenic temperatures for capacitorless memory applications
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Journal Articles

Optimal field-effect transistor operation for high-resolution biochemical measurements

Featured
Son T. Le, Seulki Cho, Curt A. Richter, Arvind Balijepalli
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 92, 030901 (2021)
https://doi.org/10.1063/5.0025847
Published: March 2021
View article titled, Optimal field-effect transistor operation for high-resolution biochemical measurements
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Journal Articles

Use of quantum effects as potential qualifying metrics for “quantum grade silicon”

A. N. Ramanayaka, Ke Tang, J. A. Hagmann, Hyun-Soo Kim, D. S. Simons, C. A. Richter, J. M. Pomeroy
Journal: AIP Advances
AIP Advances 9, 125153 (2019)
https://doi.org/10.1063/1.5128098
Published: December 2019
View article titled, Use of quantum effects as potential qualifying metrics for “quantum grade silicon”
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Journal Articles

Nonvolatile memory based on redox-active ruthenium molecular monolayers

Kai Jiang, Sujitra J. Pookpanratana, Tong Ren, Sean N. Natoli, Brent A. Sperling, Joseph Robertson, Curt A. Richter, Sheng Yu, Qiliang Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 162102 (2019)
https://doi.org/10.1063/1.5108675
Published: October 2019
View article titled, Nonvolatile memory based on redox-active ruthenium molecular monolayers
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Journal Articles

Improved contacts to p-type MoS2 transistors by charge-transfer doping and contact engineering

Siyuan Zhang, Son T. Le, Curt A. Richter, Christina A. Hacker
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 073106 (2019)
https://doi.org/10.1063/1.5100154
Published: August 2019
View article titled, Improved contacts to p-type MoS<sub>2</sub> transistors by charge-transfer doping and contact engineering
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Includes: Supplementary data
Journal Articles

Observation and control of the anomalous Aharonov-Bohm oscillation in enhanced-mode topological insulator nanowire field-effect transistors

Hao Zhu, Curt A. Richter, Sheng Yu, Huixian Ye, Min Zeng, Qiliang Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 073107 (2019)
https://doi.org/10.1063/1.5111180
Published: August 2019
View article titled, Observation and control of the anomalous Aharonov-Bohm oscillation in enhanced-mode topological insulator nanowire field-effect transistors
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Includes: Supplementary data
Journal Articles

Towards superconductivity in p-type delta-doped Si/Al/Si heterostructures

A. N. Ramanayaka, Hyun-Soo Kim, J. A. Hagmann, R. E. Murray, Ke Tang, F. Meisenkothen, H. R. Zhang, L. A. Bendersky, A. V. Davydov, Neil M. Zimmerman, C. A. Richter, J. M. Pomeroy
Journal: AIP Advances
AIP Advances 8, 075329 (2018)
https://doi.org/10.1063/1.5045338
Published: July 2018
View article titled, Towards superconductivity in p-type delta-doped Si/Al/Si heterostructures
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Journal Articles

High resolution thickness measurements of ultrathin Si:P monolayers using weak localization

Joseph A. Hagmann, Xiqiao Wang, Pradeep Namboodiri, Jonathan Wyrick, Roy Murray, M. D. Stewart, Jr., Richard M. Silver, Curt A. Richter
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 043102 (2018)
https://doi.org/10.1063/1.4998712
Published: January 2018
View article titled, High resolution thickness measurements of ultrathin Si:P monolayers using weak localization
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Journal Articles

Activation energy of negative fixed charges in thermal ALD Al2O3

S. Kühnhold-Pospischil, P. Saint-Cast, A. Richter, M. Hofmann
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 061602 (2016)
https://doi.org/10.1063/1.4960097
Published: August 2016
View article titled, Activation energy of negative fixed charges in thermal ALD <em>Al</em><sub>2</sub><em>O</em><sub>3</sub>
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Journal Articles

Field effects of current crowding in metal-MoS2 contacts

Hui Yuan, Guangjun Cheng, Sheng Yu, Angela R. Hight Walker, Curt A. Richter, Minghu Pan, Qiliang Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 103505 (2016)
https://doi.org/10.1063/1.4942409
Published: March 2016
View article titled, Field effects of current crowding in metal-MoS<sub>2</sub> contacts
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Journal Articles

Quantum and wave dynamical chaos in superconducting microwave billiards

B. Dietz, A. Richter
Journal: Chaos: An Interdisciplinary Journal of Nonlinear Science
Chaos 25, 097601 (2015)
https://doi.org/10.1063/1.4915527
Published: March 2015
View article titled, Quantum and wave dynamical chaos in superconducting microwave billiards
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Journal Articles

Modelling of pore growth in char particles by an octree-based 3D PLIC method

K. Wittig, P.A. Nikrityuk, A. Richter, B. Meyer
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1648, 030036 (2015)
https://doi.org/10.1063/1.4912353
Published: March 2015
View article titled, Modelling of pore growth in char particles by an octree-based 3D PLIC method
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Journal Articles

Parallelization of the 3D SIP algorithm

F. Dierich, K. Wittig, A. Richter, P.A. Nikrityuk
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1648, 030035 (2015)
https://doi.org/10.1063/1.4912352
Published: March 2015
View article titled, Parallelization of the 3D SIP algorithm
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Journal Articles

Polarization of Bi2Te3 thin film in a floating-gate capacitor structure

Hui Yuan, Kai Zhang, Haitao Li, Hao Zhu, John E. Bonevich, Helmut Baumgart, Curt A. Richter, Qiliang Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 233505 (2014)
https://doi.org/10.1063/1.4904003
Published: December 2014
View article titled, Polarization of Bi<sub>2</sub>Te<sub>3</sub> thin film in a floating-gate capacitor structure
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Journal Articles

Properties of the c-Si/Al2O3 interface of ultrathin atomic layer deposited Al2O3 layers capped by SiNx for c-Si surface passivation

D. Schuldis, A. Richter, J. Benick, P. Saint-Cast, M. Hermle, S. W. Glunz
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 231601 (2014)
https://doi.org/10.1063/1.4903483
Published: December 2014
View article titled, Properties of the c-Si/Al<sub>2</sub>O<sub>3</sub> interface of ultrathin atomic layer deposited Al<sub>2</sub>O<sub>3</sub> layers capped by SiN<sub>x</sub> for c-Si surface passivation
Open the PDF for Properties of the c-Si/Al<sub>2</sub>O<sub>3</sub> interface of ultrathin atomic layer deposited Al<sub>2</sub>O<sub>3</sub> layers capped by SiN<sub>x</sub> for c-Si surface passivation in another window