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Journal Articles

Simultaneous study of acoustic and optic phonon scattering of electrons and holes in undoped GaAs / Al x Ga 1 − x As heterostructures

Y. Ashlea Alava, K. Kumar, C. Harsas, P. Mehta, P. Hathi, C. Chen, D. A. Ritchie, A. R. Hamilton

Appl. Phys. Lett. 125, 252105 (2024)

https://doi.org/10.1063/5.0234082

Published: December 2024

View articletitled, Simultaneous study of acoustic and optic phonon scattering of electrons and holes in undoped GaAs / Al x Ga 1 − x As heterostructures

Journal Articles

Lightly strained germanium quantum wells with hole mobility exceeding one million

M. Lodari, O. Kong, M. Rendell, A. Tosato, A. Sammak, M. Veldhorst, A. R. Hamilton, G. Scappucci

Appl. Phys. Lett. 120, 122104 (2022)

https://doi.org/10.1063/5.0083161

Published: March 2022

View articletitled, Lightly strained germanium quantum wells with hole mobility exceeding one million

Includes: Supplementary data

Journal Articles

High electron mobility and low noise quantum point contacts in an ultra-shallow all-epitaxial metal gate GaAs/Al_xGa_1−xAs heterostructure

Y. Ashlea Alava, D. Q. Wang, C. Chen, D. A. Ritchie, O. Klochan, A. R. Hamilton

Appl. Phys. Lett. 119, 063105 (2021)

https://doi.org/10.1063/5.0053816

Published: August 2021

View articletitled, High electron mobility and low noise quantum point contacts in an ultra-shallow all-epitaxial metal gate GaAs/AlxGa1−xAs heterostructure

Journal Articles

Improving reproducibility of quantum devices with completely undoped architectures

A. Srinivasan, I. Farrer, D. A. Ritchie, A. R. Hamilton

Appl. Phys. Lett. 117, 183101 (2020)

https://doi.org/10.1063/5.0024923

Published: November 2020

View articletitled, Improving reproducibility of quantum devices with completely undoped architectures

Journal Articles

Two-dimensional lateral surface superlattices in GaAs heterostructures with independent control of carrier density and modulation potential

D. Q. Wang, D. Reuter, A. D. Wieck, A. R. Hamilton, O. Klochan

Appl. Phys. Lett. 117, 032102 (2020)

https://doi.org/10.1063/5.0009462

Published: July 2020

View articletitled, Two-dimensional lateral surface superlattices in GaAs heterostructures with independent control of carrier density and modulation potential

Journal Articles

Fabrication and characterisation of gallium arsenide ambipolar quantum point contacts

J. C. H. Chen, O. Klochan, A. P. Micolich, K. Das Gupta, F. Sfigakis, D. A. Ritchie, K. Trunov, D. Reuter, A. D. Wieck, A. R. Hamilton

Appl. Phys. Lett. 106, 183504 (2015)

https://doi.org/10.1063/1.4918934

Published: May 2015

View articletitled, Fabrication and characterisation of gallium arsenide ambipolar quantum point contacts

Journal Articles

Hybrid architecture for shallow accumulation mode AlGaAs/GaAs heterostructures with epitaxial gates

S. J. MacLeod, A. M. See, A. R. Hamilton, I. Farrer, D. A. Ritchie, J. Ritzmann, A. Ludwig, A. D. Wieck

Appl. Phys. Lett. 106, 012105 (2015)

https://doi.org/10.1063/1.4905210

Published: January 2015

View articletitled, Hybrid architecture for shallow accumulation mode AlGaAs/GaAs heterostructures with epitaxial gates

Includes: Supplementary data

Journal Articles

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor

S. J. MacLeod, A. M. See, Z. K. Keane, P. Scriven, A. P. Micolich, M. Aagesen, P. E. Lindelof, A. R. Hamilton

Appl. Phys. Lett. 104, 012114 (2014)

https://doi.org/10.1063/1.4858958

Published: January 2014

View articletitled, Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor

Includes: Supplementary data

Journal Articles

Observation of the Kondo effect in a spin- 3 2 hole quantum dot

O. Klochan, A. P. Micolich, A. R. Hamilton, K. Trunov, D. Reuter, A. D. Wieck

AIP Conf. Proc. 1566, 351–352 (2013)

https://doi.org/10.1063/1.4848430

Published: December 2013

View articletitled, Observation of the Kondo effect in a spin- 3 2 hole quantum dot

Journal Articles

Single hole transport in a silicon metal-oxide-semiconductor quantum dot

R. Li, F. E. Hudson, A. S. Dzurak, A. R. Hamilton

Appl. Phys. Lett. 103, 163508 (2013)

https://doi.org/10.1063/1.4826183

Published: October 2013

View articletitled, Single hole transport in a silicon metal-oxide-semiconductor quantum dot

Journal Articles

Ultra-shallow quantum dots in an undoped GaAs/AlGaAs two-dimensional electron gas

W. Y. Mak, F. Sfigakis, K. Das Gupta, O. Klochan, H. E. Beere, I. Farrer, J. P. Griffiths, G. A. C. Jones, A. R. Hamilton, D. A. Ritchie

Appl. Phys. Lett. 102, 103507 (2013)

https://doi.org/10.1063/1.4795613

Published: March 2013

View articletitled, Ultra-shallow quantum dots in an undoped GaAs/AlGaAs two-dimensional electron gas

Journal Articles

Fabrication and characterization of ambipolar devices on an undoped AlGaAs/GaAs heterostructure

J. C. H. Chen, D. Q. Wang, O. Klochan, A. P. Micolich, K. Das Gupta, F. Sfigakis, D. A. Ritchie, D. Reuter, A. D. Wieck, A. R. Hamilton

Appl. Phys. Lett. 100, 052101 (2012)

https://doi.org/10.1063/1.3673837

Published: January 2012

View articletitled, Fabrication and characterization of ambipolar devices on an undoped AlGaAs/GaAs heterostructure

Journal Articles

Charge transport by modulating spin-orbit gauge fields for quasi-one-dimensional holes

T. Kernreiter, M. Governale, A. R. Hamilton, U. Zülicke

Appl. Phys. Lett. 98, 152101 (2011)

https://doi.org/10.1063/1.3579197

Published: April 2011

View articletitled, Charge transport by modulating spin-orbit gauge fields for quasi-one-dimensional holes

Journal Articles

Piezoelectric rotator for studying quantum effects in semiconductor nanostructures at high magnetic fields and low temperatures

L. A. Yeoh, A. Srinivasan, T. P. Martin, O. Klochan, A. P. Micolich, A. R. Hamilton

Rev. Sci. Instrum. 81, 113905 (2010)

https://doi.org/10.1063/1.3502645

Published: November 2010

View articletitled, Piezoelectric rotator for studying quantum effects in semiconductor nanostructures at high magnetic fields and low temperatures

Journal Articles

Overlapping-gate architecture for silicon Hall bar field-effect transistors in the low electron density regime

L. H. Willems van Beveren, K. Y. Tan, N. S. Lai, A. S. Dzurak, A. R. Hamilton

Appl. Phys. Lett. 97, 152102 (2010)

https://doi.org/10.1063/1.3501136

Published: October 2010

View articletitled, Overlapping-gate architecture for silicon Hall bar field-effect transistors in the low electron density regime

Journal Articles

Electrometry using the quantum Hall effect in a bilayer two-dimensional electron system

L. H. Ho, L. J. Taskinen, A. P. Micolich, A. R. Hamilton, P. Atkinson, D. A. Ritchie

Appl. Phys. Lett. 96, 212102 (2010)

https://doi.org/10.1063/1.3428778

Published: May 2010

View articletitled, Electrometry using the quantum Hall effect in a bilayer two-dimensional electron system

Journal Articles

AlGaAs/GaAs single electron transistor fabricated without modulation doping

A. M. See, O. Klochan, A. R. Hamilton, A. P. Micolich, M. Aagesen, P. E. Lindelof

Appl. Phys. Lett. 96, 112104 (2010)

https://doi.org/10.1063/1.3358388

Published: March 2010

View articletitled, AlGaAs/GaAs single electron transistor fabricated without modulation doping

Includes: Supplementary data

Journal Articles

Fabrication and characterization of an induced GaAs single hole transistor

O. Klochan, J. C. H. Chen, A. P. Micolich, A. R. Hamilton, K. Muraki, Y. Hirayama

Appl. Phys. Lett. 96, 092103 (2010)

https://doi.org/10.1063/1.3336011

Published: March 2010

View articletitled, Fabrication and characterization of an induced GaAs single hole transistor

Journal Articles

The Reduced Effective Interaction Parameter in Closely Spaced Two‐dimensional Hole Systems

L. H. Ho, A. P. Micolich, W. R. Clarke, O. Klochan, A. R. Hamilton

AIP Conf. Proc. 1199, 209–210 (2010)

https://doi.org/10.1063/1.3295372

Published: January 2010

View articletitled, The Reduced Effective Interaction Parameter in Closely Spaced Two‐dimensional Hole Systems

Journal Articles

Radio-frequency reflectometry on large gated two-dimensional systems

L. J. Taskinen, R. P. Starrett, T. P. Martin, A. P. Micolich, A. R. Hamilton, M. Y. Simmons, D. A. Ritchie, M. Pepper

Rev. Sci. Instrum. 79, 123901 (2008)

https://doi.org/10.1063/1.3030860

Published: December 2008

View articletitled, Radio-frequency reflectometry on large gated two-dimensional systems

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Simultaneous study of acoustic and optic phonon scattering of electrons and holes in undoped GaAs / Al x Ga 1 − x As heterostructures

Lightly strained germanium quantum wells with hole mobility exceeding one million

High electron mobility and low noise quantum point contacts in an ultra-shallow all-epitaxial metal gate GaAs/Al_xGa_1−xAs heterostructure

Improving reproducibility of quantum devices with completely undoped architectures

Two-dimensional lateral surface superlattices in GaAs heterostructures with independent control of carrier density and modulation potential

Fabrication and characterisation of gallium arsenide ambipolar quantum point contacts

Hybrid architecture for shallow accumulation mode AlGaAs/GaAs heterostructures with epitaxial gates

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor

Observation of the Kondo effect in a spin- 3 2 hole quantum dot

Single hole transport in a silicon metal-oxide-semiconductor quantum dot

Ultra-shallow quantum dots in an undoped GaAs/AlGaAs two-dimensional electron gas

Fabrication and characterization of ambipolar devices on an undoped AlGaAs/GaAs heterostructure

Charge transport by modulating spin-orbit gauge fields for quasi-one-dimensional holes

Piezoelectric rotator for studying quantum effects in semiconductor nanostructures at high magnetic fields and low temperatures

Overlapping-gate architecture for silicon Hall bar field-effect transistors in the low electron density regime

Electrometry using the quantum Hall effect in a bilayer two-dimensional electron system

AlGaAs/GaAs single electron transistor fabricated without modulation doping

Fabrication and characterization of an induced GaAs single hole transistor

The Reduced Effective Interaction Parameter in Closely Spaced Two‐dimensional Hole Systems

Radio-frequency reflectometry on large gated two-dimensional systems

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