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Journal Articles

Tin-based donors in SiSn alloys

L. Scheffler, S. Roesgaard, J. L. Hansen, A. Nylandsted Larsen, B. Julsgaard
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 035702 (2019)
https://doi.org/10.1063/1.5099415
Published: July 2019
View article titled, Tin-based donors in SiSn alloys
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Journal Articles

Erratum: “Porosity as a function of stoichiometry and implantation temperature in Ge/Si1-xGex alloys” [J. Appl. Phys. 119 , 094303 (2016)]

H. S. Alkhaldi, F. Kremer, T. Bierschenk, J. L. Hansen, A. Nylandsted-Larsen, J. S. Williams, M. C. Ridgway
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 049902 (2017)
https://doi.org/10.1063/1.4975029
Published: January 2017
View article titled, Erratum: “Porosity as a function of stoichiometry and implantation temperature in Ge/Si<sub>1-x</sub>Ge<sub>x</sub> alloys” [J. Appl. Phys. 119 , 094303 (2016)]
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Journal Articles

Porosity as a function of stoichiometry and implantation temperature in Ge/Si1−xGex alloys

H. S. Alkhaldi, F. Kremer, T. Bierschenk, J. L. Hansen, A. Nylandsted-Larsen, J. S. Williams, M. C. Ridgway
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 094303 (2016)
https://doi.org/10.1063/1.4942995
Published: March 2016
View article titled, Porosity as a function of stoichiometry and implantation temperature in Ge/Si<sub>1−x</sub>Ge<sub>x</sub> alloys
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Journal Articles

Electrical and structural properties of In-implanted Si1−xGex alloys

R. Feng, F. Kremer, D. J. Sprouster, S. Mirzaei, S. Decoster, C. J. Glover, S. A. Medling, J. L. Hansen, A. Nylandsted-Larsen, S. P. Russo, M. C. Ridgway
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 025709 (2016)
https://doi.org/10.1063/1.4940046
Published: January 2016
View article titled, Electrical and structural properties of In-implanted Si<sub>1−x</sub>Ge<sub>x</sub> alloys
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Journal Articles

Suppression of tin precipitation in SiSn alloy layers by implanted carbon

P. I. Gaiduk, J. Lundsgaard Hansen, A. Nylandsted Larsen, F. L. Bregolin, W. Skorupa
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 231903 (2014)
https://doi.org/10.1063/1.4882175
Published: June 2014
View article titled, Suppression of tin precipitation in SiSn alloy layers by implanted carbon
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Journal Articles

Irradiation-induced nano-voids in strained tin precipitates in silicon

P. I. Gaiduk, J. Lundsgaard Hansen, A. Nylandsted Larsen
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 153107 (2014)
https://doi.org/10.1063/1.4871508
Published: April 2014
View article titled, Irradiation-induced nano-voids in strained tin precipitates in silicon
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Journal Articles

In-growth of an electrically active defect in high-purity silicon after proton irradiation

A. Nylandsted Larsen, H. Juul Pedersen, M. Christian Petersen, V. Privitera, Y. Gurimskaya, A. Mesli
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 223706 (2013)
https://doi.org/10.1063/1.4841175
Published: December 2013
View article titled, In-growth of an electrically active defect in high-purity silicon after proton irradiation
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Journal Articles

Si nanoparticle interfaces in Si/SiO2 solar cell materials

S. Kilpeläinen, J. Kujala, F. Tuomisto, J. Slotte, Y.-W. Lu, A. Nylandsted Larsen
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 164316 (2013)
https://doi.org/10.1063/1.4824826
Published: October 2013
View article titled, Si nanoparticle interfaces in Si/SiO<sub>2</sub> solar cell materials
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Journal Articles

Doping dependence of self-diffusion in germanium and the charge states of vacancies

T. Südkamp, H. Bracht, G. Impellizzeri, J. Lundsgaard Hansen, A. Nylandsted Larsen, E. E. Haller
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 242103 (2013)
https://doi.org/10.1063/1.4811442
Published: June 2013
View article titled, Doping dependence of self-diffusion in germanium and the charge states of vacancies
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Journal Articles

Reduced thermal conductivity of isotopically modulated silicon multilayer structures

H. Bracht, N. Wehmeier, S. Eon, A. Plech, D. Issenmann, J. Lundsgaard Hansen, A. Nylandsted Larsen, J. W. Ager, III, E. E. Haller
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 064103 (2012)
https://doi.org/10.1063/1.4742922
Published: August 2012
View article titled, Reduced thermal conductivity of isotopically modulated silicon multilayer structures
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Journal Articles

Spectroscopic studies of iron and chromium in germanium

Y. Gurimskaya, D. Mathiot, A. Sellai, P. Kruszewski, L. Dobaczewski, A. Nylandsted Larsen, A. Mesli
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 113707 (2011)
https://doi.org/10.1063/1.3664761
Published: December 2011
View article titled, Spectroscopic studies of iron and chromium in germanium
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Journal Articles

Luminescence decay dynamics of self-assembled germanium islands in silicon

B. Julsgaard, P. Balling, J. Lundsgaard Hansen, A. Svane, A. Nylandsted Larsen
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 093101 (2011)
https://doi.org/10.1063/1.3559230
Published: February 2011
View article titled, Luminescence decay dynamics of self-assembled germanium islands in silicon
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Journal Articles

Erbium diffusion in silicon dioxide

Ying-Wei Lu, B. Julsgaard, M. Christian Petersen, R. V. Skougaard Jensen, T. Garm Pedersen, K. Pedersen, A. Nylandsted Larsen
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 141903 (2010)
https://doi.org/10.1063/1.3497076
Published: October 2010
View article titled, Erbium diffusion in silicon dioxide
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Journal Articles

Composition dependence of Si and Ge diffusion in relaxed Si 1 − x Ge x alloys

R. Kube, H. Bracht, J. Lundsgaard Hansen, A. Nylandsted Larsen, E. E. Haller, S. Paul, W. Lerch
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 073520 (2010)
https://doi.org/10.1063/1.3380853
Published: April 2010
View article titled, Composition dependence of Si and Ge diffusion in relaxed Si 1 − x Ge x alloys
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Journal Articles

Deep-level transient spectroscopy of low-energy ion-irradiated silicon

Vl. Kolkovsky, V Privitera, A. Nylandsted Larsen
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 014501 (2009)
https://doi.org/10.1063/1.3054544
Published: January 2009
View article titled, Deep-level transient spectroscopy of low-energy ion-irradiated silicon
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Journal Articles

Synthesis and analysis of hollow Sn O 2 nanoislands

P. I. Gaiduk, J. Lundsgaard Hansen, A. Nylandsted Larsen
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 193112 (2008)
https://doi.org/10.1063/1.2917801
Published: May 2008
View article titled, Synthesis and analysis of hollow Sn O 2 nanoislands
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Journal Articles

Proton irradiation of germanium isotope multilayer structures at elevated temperatures

S. Schneider, H. Bracht, M. C. Petersen, J. Lundsgaard Hansen, A. Nylandsted Larsen
Journal: Journal of Applied Physics
J. Appl. Phys. 103, 033517 (2008)
https://doi.org/10.1063/1.2838206
Published: February 2008
View article titled, Proton irradiation of germanium isotope multilayer structures at elevated temperatures
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Journal Articles

Paramagnetic defects and amorphous network reconstruction of magnetron sputtered a - Si O 2 : Ge films

R. N. Pereira, J. Skov Jensen, J. Chevallier, B. Bech Nielsen, A. Nylandsted Larsen
Journal: Journal of Applied Physics
J. Appl. Phys. 102, 044309 (2007)
https://doi.org/10.1063/1.2769780
Published: August 2007
View article titled, Paramagnetic defects and amorphous network reconstruction of magnetron sputtered a - Si O 2 : Ge films
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Journal Articles

Heat treatment of metal-capped SiO 2 films containing Si nanocrystals

J. Skov Jensen, D. A. Buttenschön, T. P. Leervad Pedersen, J. Chevallier, B. Bech Nielsen, A. Nylandsted Larsen
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 056108 (2007)
https://doi.org/10.1063/1.2710434
Published: March 2007
View article titled, Heat treatment of metal-capped SiO 2 films containing Si nanocrystals
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Journal Articles

Alpha-particle irradiation-induced defects in n -type germanium

Vl. Kolkovsky, M. Christian Petersen, A. Nylandsted Larsen
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 112110 (2007)
https://doi.org/10.1063/1.2713864
Published: March 2007
View article titled, Alpha-particle irradiation-induced defects in n -type germanium
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