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A. Lochtefeld
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Journal Articles

Single-junction GaAsP solar cells grown on SiGe graded buffers on Si

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J. Faucher, A. Gerger, S. Tomasulo, C. Ebert, A. Lochtefeld, A. Barnett, M. L. Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 191901 (2013)
https://doi.org/10.1063/1.4828879
Published: November 2013
View articletitled, Single-junction GaAsP solar cells grown on SiGe graded buffers on Si
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Journal Articles

A complex x-ray structure characterization of Ge thin film heterostructures integrated on Si(001) by aspect ratio trapping and epitaxial lateral overgrowth selective chemical vapor deposition techniques

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P. Zaumseil, T. Schroeder, Ji-Soo Park, J. G. Fiorenza, A. Lochtefeld
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 093524 (2009)
https://doi.org/10.1063/1.3257265
Published: November 2009
View articletitled, A complex x-ray structure characterization of Ge thin film heterostructures integrated on Si(001) by aspect ratio trapping and epitaxial lateral overgrowth selective chemical vapor deposition techniques
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Journal Articles

Atomic-layer-deposited Al 2 O 3 / GaAs metal-oxide-semiconductor field-effect transistor on Si substrate using aspect ratio trapping technique

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Y. Q. Wu, M. Xu, P. D. Ye, Z. Cheng, J. Li, J.-S. Park, J. Hydrick, J. Bai, M. Carroll, J. G. Fiorenza, A. Lochtefeld
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 242106 (2008)
https://doi.org/10.1063/1.3050466
Published: December 2008
View articletitled, Atomic-layer-deposited Al 2 O 3 / GaAs metal-oxide-semiconductor field-effect transistor on Si substrate using aspect ratio trapping technique
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Journal Articles

Comparison of selective Ge growth in Si O 2 trenches on Si(001) and on blanket Si(001) substrates: Surface roughness and doping

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J.-S. Park, M. Curtin, J. M. Hydrick, M. Carroll, J. G. Fiorenza, A. Lochtefeld, S. Novak
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 1740–1744 (2008)
https://doi.org/10.1116/1.2981073
Published: September 2008
View articletitled, Comparison of selective Ge growth in Si O 2 trenches on Si(001) and on blanket Si(001) substrates: Surface roughness and doping
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Journal Articles

Defect reduction of GaAs/Si epitaxy by aspect ratio trapping

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J. Z. Li, J. Bai, C. Major, M. Carroll, A. Lochtefeld, Z. Shellenbarger
Journal: Journal of Applied Physics
J. Appl. Phys. 103, 106102 (2008)
https://doi.org/10.1063/1.2924410
Published: May 2008
View articletitled, Defect reduction of GaAs/Si epitaxy by aspect ratio trapping
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Journal Articles

Defect reduction of GaAs epitaxy on Si (001) using selective aspect ratio trapping

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J. Z. Li, J. Bai, J.-S. Park, B. Adekore, K. Fox, M. Carroll, A. Lochtefeld, Z. Shellenbarger
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 021114 (2007)
https://doi.org/10.1063/1.2756165
Published: July 2007
View articletitled, Defect reduction of GaAs epitaxy on Si (001) using selective aspect ratio trapping
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Journal Articles

Enhancement-mode InP n -channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al 2 O 3 dielectrics

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Y. Q. Wu, Y. Xuan, T. Shen, P. D. Ye, Z. Cheng, A. Lochtefeld
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 022108 (2007)
https://doi.org/10.1063/1.2756106
Published: July 2007
View articletitled, Enhancement-mode InP n -channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al 2 O 3 dielectrics
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Journal Articles

Study of the defect elimination mechanisms in aspect ratio trapping Ge growth

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J. Bai, J.-S. Park, Z. Cheng, M. Curtin, B. Adekore, M. Carroll, A. Lochtefeld, M. Dudley
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 101902 (2007)
https://doi.org/10.1063/1.2711276
Published: March 2007
View articletitled, Study of the defect elimination mechanisms in aspect ratio trapping Ge growth
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Journal Articles

Thin strained layers inserted in compositionally graded SiGe buffers and their effects on strain relaxation and dislocation

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J.-S. Park, M. Curtin, J. Bai, S. Bengtson, M. Carroll, A. Lochtefeld
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 053501 (2007)
https://doi.org/10.1063/1.2710356
Published: March 2007
View articletitled, Thin strained layers inserted in compositionally graded SiGe buffers and their effects on strain relaxation and dislocation
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Journal Articles

Defect reduction of selective Ge epitaxy in trenches on Si(001) substrates using aspect ratio trapping

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J.-S. Park, J. Bai, M. Curtin, B. Adekore, M. Carroll, A. Lochtefeld
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 052113 (2007)
https://doi.org/10.1063/1.2435603
Published: February 2007
View articletitled, Defect reduction of selective Ge epitaxy in trenches on Si(001) substrates using aspect ratio trapping
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Journal Articles

SiGe-free strained Si on insulator by wafer bonding and layer transfer

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T. A. Langdo, M. T. Currie, A. Lochtefeld, R. Hammond, J. A. Carlin, M. Erdtmann, G. Braithwaite, V. K. Yang, C. J. Vineis, H. Badawi, M. T. Bulsara
Journal: Applied Physics Letters
Appl. Phys. Lett. 82, 4256–4258 (2003)
https://doi.org/10.1063/1.1581371
Published: June 2003
View articletitled, SiGe-free strained Si on insulator by wafer bonding and layer transfer
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Journal Articles

High quality Ge on Si by epitaxial necking

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T. A. Langdo, C. W. Leitz, M. T. Currie, E. A. Fitzgerald, A. Lochtefeld, D. A. Antoniadis
Journal: Applied Physics Letters
Appl. Phys. Lett. 76, 3700–3702 (2000)
https://doi.org/10.1063/1.126754
Published: June 2000
View articletitled, High quality Ge on Si by epitaxial necking
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