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Journal Articles

Mid-infrared type-II InAs/InAsSb quantum wells integrated on silicon

E. Delli, P. D. Hodgson, M. Bentley, E. Repiso, A. P. Craig, Q. Lu, R. Beanland, A. R. J. Marshall, A. Krier, P. J. Carrington
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 131103 (2020)
https://doi.org/10.1063/5.0022235
Published: September 2020
View article titled, Mid-infrared type-II InAs/InAsSb quantum wells integrated on silicon
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Journal Articles

Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode

D. M. Di Paola, Q. Lu, E. Repiso, M. Kesaria, O. Makarovsky, A. Krier, A. Patanè
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 142108 (2020)
https://doi.org/10.1063/5.0002407
Published: April 2020
View article titled, Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode
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Includes: Supplementary data
Journal Articles

Resonant cavity enhanced photodiodes on GaSb for the mid-wave infrared

A. P. Craig, F. Al-Saymari, M. Jain, A. Bainbridge, G. R. Savich, T. Golding, A. Krier, G. W. Wicks, A. R. Marshall
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 151107 (2019)
https://doi.org/10.1063/1.5082895
Published: April 2019
View article titled, Resonant cavity enhanced photodiodes on GaSb for the mid-wave infrared
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Journal Articles

Highly-mismatched InAs/InSe heterojunction diodes

A. V. Velichko, Z. R. Kudrynskyi, D. M. Di Paola, O. Makarovsky, M. Kesaria, A. Krier, I. C. Sandall, C. H. Tan, Z. D. Kovalyuk, A. Patanè
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 182115 (2016)
https://doi.org/10.1063/1.4967381
Published: November 2016
View article titled, Highly-mismatched InAs/InSe heterojunction diodes
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Journal Articles

Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP

R. Wheatley, M. Kesaria, L. J. Mawst, J. D. Kirch, T. F. Kuech, A. Marshall, Q. D. Zhuang, A. Krier
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 232105 (2015)
https://doi.org/10.1063/1.4922590
Published: June 2015
View article titled, Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP
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Journal Articles

Solution processed lanthanum aluminate gate dielectrics for use in metal oxide-based thin film transistors

M. Esro, R. Mazzocco, G. Vourlias, O. Kolosov, A. Krier, W. I. Milne, G. Adamopoulos
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 203507 (2015)
https://doi.org/10.1063/1.4921262
Published: May 2015
View article titled, Solution processed lanthanum aluminate gate dielectrics for use in metal oxide-based thin film transistors
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Journal Articles

H-tailored surface conductivity in narrow band gap In(AsN)

A. V. Velichko, A. Patanè, M. Capizzi, I. C. Sandall, D. Giubertoni, O. Makarovsky, A. Polimeni, A. Krier, Q. Zhuang, C. H. Tan
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 022111 (2015)
https://doi.org/10.1063/1.4906111
Published: January 2015
View article titled, H-tailored surface conductivity in narrow band gap In(AsN)
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Journal Articles

Photoluminescence studies of individual and few GaSb/GaAs quantum rings

M. P. Young, C. S. Woodhead, J. Roberts, Y. J. Noori, M. T. Noble, A. Krier, E. P. Smakman, P. M. Koenraad, M. Hayne, R. J. Young
Journal: AIP Advances
AIP Advances 4, 117127 (2014)
https://doi.org/10.1063/1.4902177
Published: November 2014
View article titled, Photoluminescence studies of individual and few GaSb/GaAs quantum rings
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Journal Articles

Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers

Q. Lu, Q. Zhuang, J. Hayton, M. Yin, A. Krier
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 031115 (2014)
https://doi.org/10.1063/1.4891636
Published: July 2014
View article titled, Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers
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Journal Articles

Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

M. C. Wagener, P. J. Carrington, J. R. Botha, A. Krier
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 044304 (2014)
https://doi.org/10.1063/1.4891223
Published: July 2014
View article titled, Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings
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Journal Articles

Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

M. C. Wagener, P. J. Carrington, J. R. Botha, A. Krier
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 014302 (2014)
https://doi.org/10.1063/1.4861129
Published: January 2014
View article titled, Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells
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Journal Articles

Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays

A. P. Craig, A. R. J. Marshall, Z.-B. Tian, S. Krishna, A. Krier
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 253502 (2013)
https://doi.org/10.1063/1.4844615
Published: December 2013
View article titled, Mid-infrared InAs<sub>0.79</sub>Sb<sub>0.21</sub>-based <em>nBn</em> photodetectors with Al<sub>0.9</sub>Ga<sub>0.2</sub>As<sub>0.1</sub>Sb<sub>0.9</sub> barrier layers, and comparisons with InAs<sub>0.87</sub>Sb<sub>0.13</sub> <em>p-i-n</em> diodes, both grown on GaAs using interfacial misfit arrays
Open the PDF for Mid-infrared InAs<sub>0.79</sub>Sb<sub>0.21</sub>-based <em>nBn</em> photodetectors with Al<sub>0.9</sub>Ga<sub>0.2</sub>As<sub>0.1</sub>Sb<sub>0.9</sub> barrier layers, and comparisons with InAs<sub>0.87</sub>Sb<sub>0.13</sub> <em>p-i-n</em> diodes, both grown on GaAs using interfacial misfit arrays in another window
Journal Articles

Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures

P. D. Hodgson, R. J. Young, M. Ahmad Kamarudin, P. J. Carrington, A. Krier, Q. D. Zhuang, E. P. Smakman, P. M. Koenraad, M. Hayne
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 073519 (2013)
https://doi.org/10.1063/1.4818834
Published: August 2013
View article titled, Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures
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Journal Articles

Simulation of the enhanced infrared photoresponse of type-II GaSb/GaAs quantum ring solar cells

M. C. Wagener, P. J. Carrington, J. R. Botha, A. Krier
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 063902 (2013)
https://doi.org/10.1063/1.4818126
Published: August 2013
View article titled, Simulation of the enhanced infrared photoresponse of type-II GaSb/GaAs quantum ring solar cells
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Journal Articles

Temperature dependence of photoluminescence from InNAsSb layers: The role of localized and free carrier emission in determination of temperature dependence of energy gap

M. Latkowska, R. Kudrawiec, F. Janiak, M. Motyka, J. Misiewicz, Q. Zhuang, A. Krier, W. Walukiewicz
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 122109 (2013)
https://doi.org/10.1063/1.4798590
Published: March 2013
View article titled, Temperature dependence of photoluminescence from InNAsSb layers: The role of localized and free carrier emission in determination of temperature dependence of energy gap
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Journal Articles

Enhanced infrared photo-response from GaSb/GaAs quantum ring solar cells

P. J. Carrington, M. C. Wagener, J. R. Botha, A. M. Sanchez, A. Krier
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 231101 (2012)
https://doi.org/10.1063/1.4768942
Published: December 2012
View article titled, Enhanced infrared photo-response from GaSb/GaAs quantum ring solar cells
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Journal Articles

Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes

K. J. Cheetham, A. Krier, I. P. Marko, A. Aldukhayel, S. J. Sweeney
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 141110 (2011)
https://doi.org/10.1063/1.3646910
Published: October 2011
View article titled, Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes
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Journal Articles

Photoreflectance study of N- and Sb-related modifications of the energy gap and spin-orbit splitting in InNAsSb alloys

R. Kudrawiec, M. Latkowska, J. Misiewicz, Q. Zhuang, A. M. R. Godenir, A. Krier
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 011904 (2011)
https://doi.org/10.1063/1.3607479
Published: July 2011
View article titled, Photoreflectance study of N- and Sb-related modifications of the energy gap and spin-orbit splitting in InNAsSb alloys
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Journal Articles

Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy

O. Drachenko, A. Patanè, N. V. Kozlova, Q. D. Zhuang, A. Krier, L. Eaves, M. Helm
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 162109 (2011)
https://doi.org/10.1063/1.3583378
Published: April 2011
View article titled, Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy
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Journal Articles

Structural and optical properties of dilute InAsN grown by molecular beam epitaxy

J. Ibáñez, R. Oliva, M. De la Mare, M. Schmidbauer, S. Hernández, P. Pellegrino, D. J. Scurr, R. Cuscó, L. Artús, M. Shafi, R. H. Mari, M. Henini, Q. Zhuang, A. Godenir, A. Krier
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 103504 (2010)
https://doi.org/10.1063/1.3509149
Published: November 2010
View article titled, Structural and optical properties of dilute InAsN grown by molecular beam epitaxy
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