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Journal Articles

Type II InAs/GaAsSb quantum dots: Highly tunable exciton geometry and topology

J. M. Llorens, L. Wewior, E. R. Cardozo de Oliveira, J. M. Ulloa, A. D. Utrilla, A. Guzmán, A. Hierro, B. Alén

Appl. Phys. Lett. 107, 183101 (2015)

https://doi.org/10.1063/1.4934841

Published: November 2015

View article titled, Type II InAs/GaAsSb quantum dots: Highly tunable exciton geometry and topology

Includes: Supplementary data

Journal Articles

Trajectory reconstruction using personalized routing over a graph

Edison C. Ospina, Francisco J. Moreno, Jaime A. Guzmán

AIP Conf. Proc. 1648, 850072 (2015)

https://doi.org/10.1063/1.4913127

Published: March 2015

View article titled, Trajectory reconstruction using personalized routing over a graph

Journal Articles

Capping layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots

J. M. Ulloa, D. F. Reyes, A. D. Utrilla, A. Guzman, A. Hierro, T. Ben, D. González

J. Appl. Phys. 116, 134301 (2014)

https://doi.org/10.1063/1.4896963

Published: October 2014

View article titled, Capping layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots

Journal Articles

GaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics

A. D. Utrilla, D. F. Reyes, J. M. Ulloa, D. González, T. Ben, A. Guzman, A. Hierro

Appl. Phys. Lett. 105, 043105 (2014)

https://doi.org/10.1063/1.4891557

Published: July 2014

View article titled, GaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics

Journal Articles

Genomic DNA characterization of pork spleen by Raman spectroscopy

D. A. Guzmán-Embús, M. Orrego Cardozo, C. Vargas-Hernández

J. Appl. Phys. 114, 194704 (2013)

https://doi.org/10.1063/1.4831948

Published: November 2013

View article titled, Genomic DNA characterization of pork spleen by Raman spectroscopy

Journal Articles

Impact of the Sb content on the performance of GaAsSb-capped InAs/GaAs quantum dot lasers

A. D. Utrilla, J. M. Ulloa, A. Guzman, A. Hierro

Appl. Phys. Lett. 103, 111114 (2013)

https://doi.org/10.1063/1.4821071

Published: September 2013

View article titled, Impact of the Sb content on the performance of GaAsSb-capped InAs/GaAs quantum dot lasers

Journal Articles

Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots

R. Gargallo-Caballero, A. Guzmán, J. M. Ulloa, A. Hierro, M. Hopkinson, E. Luna, A. Trampert

J. Appl. Phys. 111, 083530 (2012)

https://doi.org/10.1063/1.4706559

Published: April 2012

View article titled, Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots

Journal Articles

High optical sensitivity to ambient conditions of uncapped InGaAs surface quantum dots

M. J. Milla, J. M. Ulloa, A. Guzmán

Appl. Phys. Lett. 100, 131601 (2012)

https://doi.org/10.1063/1.3697992

Published: March 2012

View article titled, High optical sensitivity to ambient conditions of uncapped InGaAs surface quantum dots

Journal Articles

Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer

J. M. Ulloa, D. F. Reyes, M. Montes, K. Yamamoto, D. L. Sales, D. González, A. Guzman, A. Hierro

Appl. Phys. Lett. 100, 013107 (2012)

https://doi.org/10.1063/1.3673563

Published: January 2012

View article titled, Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer

Journal Articles

Inhibition of In desorption in diluted nitride InAsN quantum dots

D. F. Reyes, D. González, D. L. Sales, R. Gargallo-Caballero, A. Guzmán, J. M. Ulloa, A. Hierro

Appl. Phys. Lett. 98, 071910 (2011)

https://doi.org/10.1063/1.3554386

Published: February 2011

View article titled, Inhibition of In desorption in diluted nitride InAsN quantum dots

Journal Articles

External efficiency and carrier loss mechanisms in InAs/GaInNAs quantum dot light-emitting diodes

M. Montes, A. Hierro, J. M. Ulloa, A. Guzmán, M. Al Khalfioui, M. Hugues, B. Damilano, J. Massies

J. Appl. Phys. 108, 033104 (2010)

https://doi.org/10.1063/1.3467004

Published: August 2010

View article titled, External efficiency and carrier loss mechanisms in InAs/GaInNAs quantum dot light-emitting diodes

Journal Articles

High responsivity and internal gain mechanisms in Au-ZnMgO Schottky photodiodes

G. Tabares, A. Hierro, J. M. Ulloa, A. Guzman, E. Muñoz, A. Nakamura, T. Hayashi, J. Temmyo

Appl. Phys. Lett. 96, 101112 (2010)

https://doi.org/10.1063/1.3340945

Published: March 2010

View article titled, High responsivity and internal gain mechanisms in Au-ZnMgO Schottky photodiodes

Journal Articles

Role of ionized nitrogen species in the optical and structural properties of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy

J. Miguel-Sánchez, A. Guzmán, U. Jahn, A. Trampert, J. M. Ulloa, E. Muñoz, A. Hierro

J. Appl. Phys. 101, 103526 (2007)

https://doi.org/10.1063/1.2733740

Published: May 2007

View article titled, Role of ionized nitrogen species in the optical and structural properties of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy

Journal Articles

Photoluminescence and magnetophotoluminescence studies in GaInNAs/GaAs quantum wells

J. Segura, N. Garro, A. Cantarero, J. Miguel‐Sánchez, A. Guzmán, A. Hierro

AIP Conf. Proc. 893, 425–426 (2007)

https://doi.org/10.1063/1.2729947

Published: April 2007

View article titled, Photoluminescence and magnetophotoluminescence studies in GaInNAs/GaAs quantum wells

Journal Articles

Cathodoluminescence investigations of GaInNAs on Ga As ( 111 ) B

J. Miguel-Sánchez, U. Jahn, A. Guzmán, E. Muñoz

Appl. Phys. Lett. 89, 231901 (2006)

https://doi.org/10.1063/1.2398919

Published: December 2006

View article titled, Cathodoluminescence investigations of GaInNAs on Ga As ( 111 ) B

Journal Articles

Correlation between the performance of double-barrier quantum-well infrared photodetectors and their microstructure: On the origin of the photovoltaic effect

E. Luna, A. Trampert, A. Guzmán, E. Calleja

J. Appl. Phys. 98, 044510 (2005)

https://doi.org/10.1063/1.2006990

Published: August 2005

View article titled, Correlation between the performance of double-barrier quantum-well infrared photodetectors and their microstructure: On the origin of the photovoltaic effect

Journal Articles

Role of N ions in the optical and morphological properties of InGaAsN quantum wells for 1.3 – 1.5 μ m applications

J. Miguel-Sánchez, A. Guzmán, E. Muñoz

Appl. Phys. Lett. 85, 1940–1942 (2004)

https://doi.org/10.1063/1.1790591

Published: September 2004

View article titled, Role of N ions in the optical and morphological properties of InGaAsN quantum wells for 1.3 – 1.5 μ m applications

Journal Articles

Dominant carrier recombination mechanisms in Ga In N As ∕ Ga As quantum well light-emitting diodes

J. M. Ulloa, A. Hierro, J. Miguel-Sánchez, A. Guzmán, E. Tournié, J. L. Sánchez-Rojas, E. Calleja

Appl. Phys. Lett. 85, 40–42 (2004)

https://doi.org/10.1063/1.1769078

Published: July 2004

View article titled, Dominant carrier recombination mechanisms in Ga In N As ∕ Ga As quantum well light-emitting diodes

Journal Articles

Experience with a fluorescence‐based beam position monitor at the APS

E. M. Dufresne, J. A. Guzman, S. B. Dierker, R. Clarke, D. A. Arms, D. A. Walko

AIP Conf. Proc. 705, 679–682 (2004)

https://doi.org/10.1063/1.1757887

Published: May 2004

View article titled, Experience with a fluorescence‐based beam position monitor at the APS

Journal Articles

Effect of nitrogen on the optical properties of InGaAsN p-i-n structures grown on misoriented (111)B GaAs substrates

J. Miguel-Sánchez, A. Guzmán, J. M. Ulloa, A. Hierro, E. Muñoz

Appl. Phys. Lett. 84, 2524–2526 (2004)

https://doi.org/10.1063/1.1695639

Published: April 2004

View article titled, Effect of nitrogen on the optical properties of InGaAsN p-i-n structures grown on misoriented (111)B GaAs substrates

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Topics

Type II InAs/GaAsSb quantum dots: Highly tunable exciton geometry and topology

Trajectory reconstruction using personalized routing over a graph

Capping layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots

GaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics

Genomic DNA characterization of pork spleen by Raman spectroscopy

Impact of the Sb content on the performance of GaAsSb-capped InAs/GaAs quantum dot lasers

Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots

High optical sensitivity to ambient conditions of uncapped InGaAs surface quantum dots

Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer

Inhibition of In desorption in diluted nitride InAsN quantum dots

External efficiency and carrier loss mechanisms in InAs/GaInNAs quantum dot light-emitting diodes

High responsivity and internal gain mechanisms in Au-ZnMgO Schottky photodiodes

Role of ionized nitrogen species in the optical and structural properties of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy

Photoluminescence and magnetophotoluminescence studies in GaInNAs/GaAs quantum wells

Cathodoluminescence investigations of GaInNAs on Ga As ( 111 ) B

Correlation between the performance of double-barrier quantum-well infrared photodetectors and their microstructure: On the origin of the photovoltaic effect

Role of N ions in the optical and morphological properties of InGaAsN quantum wells for 1.3 – 1.5 μ m applications

Dominant carrier recombination mechanisms in Ga In N As ∕ Ga As quantum well light-emitting diodes

Experience with a fluorescence‐based beam position monitor at the APS

Effect of nitrogen on the optical properties of InGaAsN p-i-n structures grown on misoriented (111)B GaAs substrates

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