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A. Gruverman
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Journal Articles

Domain wall saddle point morphology in ferroelectric triglycine sulfate

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C. J. McCluskey, A. Kumar, A. Gruverman, I. Luk'yanchuk, J. M. Gregg
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 222902 (2023)
https://doi.org/10.1063/5.0152518
Published: June 2023
View article titled, Domain wall saddle point morphology in ferroelectric triglycine sulfate
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Includes: Supplementary data
Journal Articles

Electroresistance effect in MoS2-Hf0.5Zr0.5O2 heterojunctions

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P. Chaudhary, P. Buragohain, M. Kozodaev, S. Zarubin, V. Mikheev, A. Chouprik, A. Lipatov, A. Sinitskii, A. Zenkevich, A. Gruverman
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 083106 (2021)
https://doi.org/10.1063/5.0035306
Published: February 2021
View article titled, Electroresistance effect in MoS2-Hf0.5Zr0.5O2 heterojunctions
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Journal Articles

Tip-induced domain protrusion in ferroelectric films with in-plane polarization

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S. Kondovych, A. Gruverman, I. Luk’yanchuk
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 054103 (2021)
https://doi.org/10.1063/5.0035950
Published: February 2021
View article titled, Tip-induced domain protrusion in ferroelectric films with in-plane polarization
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Journal Articles

Nanoscopic studies of domain structure dynamics in ferroelectric La:HfO2 capacitors

Free
P. Buragohain, C. Richter, T. Schenk, H. Lu, T. Mikolajick, U. Schroeder, A. Gruverman
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 222901 (2018)
https://doi.org/10.1063/1.5030562
Published: May 2018
View article titled, Nanoscopic studies of domain structure dynamics in ferroelectric La:HfO2 capacitors
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Journal Articles

Superdomain dynamics in ferroelectric-ferroelastic films: Switching, jamming, and relaxation

Free
J. F. Scott, A. Hershkovitz, Y. Ivry, H. Lu, A. Gruverman, J. M. Gregg
Journal: Applied Physics Reviews
Appl. Phys. Rev. 4, 041104 (2017)
https://doi.org/10.1063/1.5005994
Published: November 2017
View article titled, Superdomain dynamics in ferroelectric-ferroelastic films: Switching, jamming, and relaxation
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Journal Articles

Hydrodynamics of domain walls in ferroelectrics and multiferroics: Impact on memory devices

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J. F. Scott, D. M. Evans, J. M. Gregg, A. Gruverman
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 042901 (2016)
https://doi.org/10.1063/1.4959996
Published: July 2016
View article titled, Hydrodynamics of domain walls in ferroelectrics and multiferroics: Impact on memory devices
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Journal Articles

Multiferroic tunnel junctions and ferroelectric control of magnetic state at interface (invited)

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Y. W. Yin, M. Raju, W. J. Hu, J. D. Burton, Y.-M. Kim, A. Y. Borisevich, S. J. Pennycook, S. M. Yang, T. W. Noh, A. Gruverman, X. G. Li, Z. D. Zhang, E. Y. Tsymbal, Qi Li
Journal: Journal of Applied Physics
Series: Magnetism and Magnetic Materials
J. Appl. Phys. 117, 172601 (2015)
https://doi.org/10.1063/1.4913753
Published: March 2015
View article titled, Multiferroic tunnel junctions and ferroelectric control of magnetic state at interface (invited)
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Journal Articles

Sequential injection of domain walls into ferroelectrics at different bias voltages: Paving the way for “domain wall memristors”

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J. R. Whyte, R. G. P. McQuaid, C. M. Ashcroft, J. F. Einsle, C. Canalias, A. Gruverman, J. M. Gregg
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 066813 (2014)
https://doi.org/10.1063/1.4891347
Published: August 2014
View article titled, Sequential injection of domain walls into ferroelectrics at different bias voltages: Paving the way for “domain wall memristors”
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Journal Articles

Ferroelectric switching in epitaxial GeTe films

Open Access
A. V. Kolobov, D. J. Kim, A. Giussani, P. Fons, J. Tominaga, R. Calarco, A. Gruverman
Journal: APL Materials
APL Mater. 2, 066101 (2014)
https://doi.org/10.1063/1.4881735
Published: June 2014
View article titled, Ferroelectric switching in epitaxial GeTe films
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Journal Articles

Publisher's Note: “Epitaxial lead zirconate titanate on gallium nitride” [J. Appl. Phys. 113, 074107 (2013)]

Free
E. A. Paisley, H. S. Craft, M. D. Losego, H. Lu, A. Gruverman, R. Collazo, Z. Sitar, J.-P. Maria
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 239901 (2013)
https://doi.org/10.1063/1.4842135
Published: December 2013
View article titled, Publisher's Note: “Epitaxial lead zirconate titanate on gallium nitride” [J. Appl. Phys. 113, 074107 (2013)]
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Journal Articles

Retention of resistance states in ferroelectric tunnel memristors

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D. J. Kim, H. Lu, S. Ryu, S. Lee, C. W. Bark, C. B. Eom, A. Gruverman
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 142908 (2013)
https://doi.org/10.1063/1.4823989
Published: October 2013
View article titled, Retention of resistance states in ferroelectric tunnel memristors
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Journal Articles

Magnetoelectric coupling at the EuO/BaTiO3 interface

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S. Cao, P. Liu, J. Tang, H. Lu, C.-W. Bark, S. Ryu, C. B. Eom, A. Gruverman, P. A. Dowben
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 172402 (2013)
https://doi.org/10.1063/1.4803492
Published: April 2013
View article titled, Magnetoelectric coupling at the EuO/BaTiO3 interface
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Journal Articles

Polarization relaxation kinetics in ultrathin ferroelectric capacitors

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A. Stamm, D. J. Kim, H. Lu, C. W. Bark, C. B. Eom, A. Gruverman
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 092901 (2013)
https://doi.org/10.1063/1.4794865
Published: March 2013
View article titled, Polarization relaxation kinetics in ultrathin ferroelectric capacitors
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Journal Articles

Epitaxial PbxZr1−xTiO3 on GaN

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E. A. Paisley, H. S. Craft, M. D. Losego, H. Lu, A. Gruverman, R. Collazo, Z. Sitar, J.-P. Maria
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 074107 (2013)
https://doi.org/10.1063/1.4792599
Published: February 2013
View article titled, Epitaxial PbxZr1−xTiO3 on GaN
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Journal Articles

Electric modulation of magnetization at the BaTiO3/La0.67Sr0.33MnO3 interfaces

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H. Lu, T. A. George, Y. Wang, I. Ketsman, J. D. Burton, C.-W. Bark, S. Ryu, D. J. Kim, J. Wang, C. Binek, P. A. Dowben, A. Sokolov, C.-B. Eom, E. Y. Tsymbal, A. Gruverman
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 232904 (2012)
https://doi.org/10.1063/1.4726427
Published: June 2012
View article titled, Electric modulation of magnetization at the BaTiO3/La0.67Sr0.33MnO3 interfaces
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Journal Articles

Polarization-specific adsorption of organic molecules on ferroelectric LiNbO 3 surfaces

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Zhengzheng Zhang, P. Sharma, C. N. Borca, P. A. Dowben, A. Gruverman
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 243702 (2010)
https://doi.org/10.1063/1.3525373
Published: December 2010
View article titled, Polarization-specific adsorption of organic molecules on ferroelectric LiNbO 3 surfaces
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Journal Articles

Web-like domain structure formation in barium titanate single crystals

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B. J. Rodriguez, L. M. Eng, A. Gruverman
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 042902 (2010)
https://doi.org/10.1063/1.3467871
Published: July 2010
View article titled, Web-like domain structure formation in barium titanate single crystals
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Journal Articles

Anisotropy of domain growth in epitaxial ferroelectric capacitors

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D. Wu, I. Vrejoiu, M. Alexe, A. Gruverman
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 112903 (2010)
https://doi.org/10.1063/1.3366724
Published: March 2010
View article titled, Anisotropy of domain growth in epitaxial ferroelectric capacitors
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Journal Articles

Spatial variations in local switching parameters of ferroelectric random access memory capacitors

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D. Wu, I. Kunishima, S. Roberts, A. Gruverman
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 092901 (2009)
https://doi.org/10.1063/1.3192354
Published: September 2009
View article titled, Spatial variations in local switching parameters of ferroelectric random access memory capacitors
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Journal Articles

Peculiar effect of mechanical stress on polarization stability in micrometer-scale ferroelectric capacitors

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A. Gruverman, J. S. Cross, W. S. Oates
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 242902 (2008)
https://doi.org/10.1063/1.3046734
Published: December 2008
View article titled, Peculiar effect of mechanical stress on polarization stability in micrometer-scale ferroelectric capacitors
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