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Journal Articles

SiC via fabrication for wide-band-gap high electron mobility transistor/microwave monolithic integrated circuit devices

L. F. Voss, K. Ip, S. J. Pearton, R. J. Shul, M. E. Overberg, A. G. Baca, C. Sanchez, J. Stevens, M. Martinez, M. G. Armendariz, G. A. Wouters

J. Vac. Sci. Technol. B 26, 487–494 (2008)

https://doi.org/10.1116/1.2837849

Published: March 2008

View articletitled, SiC via fabrication for wide-band-gap high electron mobility transistor/microwave monolithic integrated circuit devices

Journal Articles

Self-heating study of an Al Ga N ∕ Ga N -based heterostructure field-effect transistor using ultraviolet micro-Raman scattering

I. Ahmad, V. Kasisomayajula, M. Holtz, J. M. Berg, S. R. Kurtz, C. P. Tigges, A. A. Allerman, A. G. Baca

Appl. Phys. Lett. 86, 173503 (2005)

https://doi.org/10.1063/1.1906305

Published: April 2005

View articletitled, Self-heating study of an Al Ga N ∕ Ga N -based heterostructure field-effect transistor using ultraviolet micro-Raman scattering

Journal Articles

Electronic properties of the AlGaN/GaN heterostructure and two-dimensional electron gas observed by electroreflectance

S. R. Kurtz, A. A. Allerman, D. D. Koleske, A. G. Baca, R. D. Briggs

J. Appl. Phys. 95, 1888–1894 (2004)

https://doi.org/10.1063/1.1639955

Published: February 2004

View articletitled, Electronic properties of the AlGaN/GaN heterostructure and two-dimensional electron gas observed by electroreflectance

Journal Articles

Comparison of stability of WSi X / SiC and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation

Jihyun Kim, F. Ren, G. Y. Chung, M. F. MacMillan, A. G. Baca, R. D. Briggs, D. Schoenfeld, S. J. Pearton

Appl. Phys. Lett. 84, 371–373 (2004)

https://doi.org/10.1063/1.1642271

Published: January 2004

View articletitled, Comparison of stability of WSi X / SiC and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation

Journal Articles

Improved morphology for ohmic contacts to AlGaN/GaN high electron mobility transistors using WSi x - or W-based metallization

B. Luo, F. Ren, R. C. Fitch, J. K. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo, A. G. Baca, R. D. Briggs, D. Gotthold, R. Birkhahn, B. Peres, S. J. Pearton

Appl. Phys. Lett. 82, 3910–3912 (2003)

https://doi.org/10.1063/1.1579845

Published: June 2003

View articletitled, Improved morphology for ohmic contacts to AlGaN/GaN high electron mobility transistors using WSi x - or W-based metallization

Journal Articles

Thermal stability of WSi x and W Schottky contacts on n- GaN

Jihyun Kim, F. Ren, A. G. Baca, S. J. Pearton

Appl. Phys. Lett. 82, 3263–3265 (2003)

https://doi.org/10.1063/1.1576506

Published: May 2003

View articletitled, Thermal stability of WSi x and W Schottky contacts on n- GaN

Journal Articles

Observation of enhanced transport in carbon-doped InGaAsN after in situ anneal and its impact on performance of NpN InGaP/InGaAsN heterojunction bipolar transistors

C. Monier, A. G. Baca, S. Z. Sun, E. Armour, F. Newman, H. Q. Hou

Appl. Phys. Lett. 81, 2103–2105 (2002)

https://doi.org/10.1063/1.1506406

Published: September 2002

View articletitled, Observation of enhanced transport in carbon-doped InGaAsN after in situ anneal and its impact on performance of NpN InGaP/InGaAsN heterojunction bipolar transistors

Journal Articles

Influence of MgO and Sc 2 O 3 passivation on AlGaN/GaN high-electron-mobility transistors

B. Luo, J. W. Johnson, J. Kim, R. M. Mehandru, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, A. G. Baca, R. D. Briggs, R. J. Shul, C. Monier, J. Han

Appl. Phys. Lett. 80, 1661–1663 (2002)

https://doi.org/10.1063/1.1455692

Published: March 2002

View articletitled, Influence of MgO and Sc 2 O 3 passivation on AlGaN/GaN high-electron-mobility transistors

Journal Articles

Influence of Co 60 γ-rays on dc performance of AlGaN/GaN high electron mobility transistors

B. Luo, J. W. Johnson, F. Ren, K. K. Allums, C. R. Abernathy, S. J. Pearton, A. M. Dabiran, A. M. Wowchack, C. J. Polley, P. P. Chow, D. Schoenfeld, A. G. Baca

Appl. Phys. Lett. 80, 604–606 (2002)

https://doi.org/10.1063/1.1445809

Published: January 2002

View articletitled, Influence of Co 60 γ-rays on dc performance of AlGaN/GaN high electron mobility transistors

Journal Articles

dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors

B. Luo, J. W. Johnson, F. Ren, K. K. Allums, C. R. Abernathy, S. J. Pearton, R. Dwivedi, T. N. Fogarty, R. Wilkins, A. M. Dabiran, A. M. Wowchack, C. J. Polley, P. P. Chow, A. G. Baca

Appl. Phys. Lett. 79, 2196–2198 (2001)

https://doi.org/10.1063/1.1408606

Published: October 2001

View articletitled, dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors

Journal Articles

Inductively coupled plasma-induced etch damage of GaN p-n junctions

R. J. Shul, L. Zhang, A. G. Baca, C. G. Willison, J. Han, S. J. Pearton, F. Ren

J. Vac. Sci. Technol. A 18, 1139–1143 (2000)

https://doi.org/10.1116/1.582313

Published: July 2000

View articletitled, Inductively coupled plasma-induced etch damage of GaN p-n junctions

Journal Articles

Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors

C. Monier, S. J. Pearton, P. C. Chang, A. G. Baca, F. Ren

Appl. Phys. Lett. 76, 3115–3117 (2000)

https://doi.org/10.1063/1.126541

Published: May 2000

View articletitled, Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors

Journal Articles

Direct-current characteristics of pnp AlGaN/GaN heterojunction bipolar transistors

A. P. Zhang, G. T. Dang, F. Ren, J. Han, A. G. Baca, R. J. Shul, H. Cho, C. Monier, X. A. Cao, C. R. Abernathy, S. J. Pearton

Appl. Phys. Lett. 76, 2943–2945 (2000)

https://doi.org/10.1063/1.126524

Published: May 2000

View articletitled, Direct-current characteristics of pnp AlGaN/GaN heterojunction bipolar transistors

Journal Articles

InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor

P. C. Chang, A. G. Baca, N. Y. Li, P. R. Sharps, H. Q. Hou, J. R. Laroche, F. Ren

Appl. Phys. Lett. 76, 2788–2790 (2000)

https://doi.org/10.1063/1.126476

Published: May 2000

View articletitled, InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor

Journal Articles

InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor

P. C. Chang, A. G. Baca, N. Y. Li, X. M. Xie, H. Q. Hou, E. Armour

Appl. Phys. Lett. 76, 2262–2264 (2000)

https://doi.org/10.1063/1.126315

Published: April 2000

View articletitled, InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor

Journal Articles

Oxygen implant isolation of n-GaN field-effect transistor structures

G. Dang, X. A. Cao, F. Ren, S. J. Pearton, J. Han, A. G. Baca, R. J. Shul

J. Vac. Sci. Technol. B 17, 2015–2018 (1999)

https://doi.org/10.1116/1.590864

Published: September 1999

View articletitled, Oxygen implant isolation of n-GaN field-effect transistor structures

Journal Articles

Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

J. Han, A. G. Baca, R. J. Shul, C. G. Willison, L. Zhang, F. Ren, A. P. Zhang, G. T. Dang, S. M. Donovan, X. A. Cao, H. Cho, K. B. Jung, C. R. Abernathy, S. J. Pearton, R. G. Wilson

Appl. Phys. Lett. 74, 2702–2704 (1999)

https://doi.org/10.1063/1.123942

Published: May 1999

View articletitled, Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

Journal Articles

Comparison of ohmic metallization schemes for InGaAlN

F. Ren, C. B. Vartuli, S. J. Pearton, C. R. Abernathy, S. M. Donovan, J. D. MacKenzie, R. J. Shul, J. C. Zolper, M. L. Lovejoy, A. G. Baca, M. Hagerott-Crawford, K. A. Jones

J. Vac. Sci. Technol. A 15, 802–806 (1997)

https://doi.org/10.1116/1.580711

Published: May 1997

View articletitled, Comparison of ohmic metallization schemes for InGaAlN

Journal Articles

Thermal stability of W, WSi_x, and Ti/Al ohmic contacts to InGaN, InN, and InAlN

C. B. Vartuli, S. J. Pearton, C. R. Abernathy, J. D. MacKenzie, R. J. Shul, J. C. Zolper, M. L. Lovejoy, A. G. Baca, M. Hagerott‐Crawford

J. Vac. Sci. Technol. B 14, 3520–3522 (1996)

https://doi.org/10.1116/1.588791

Published: November 1996

View articletitled, Thermal stability of W, WSix, and Ti/Al ohmic contacts to InGaN, InN, and InAlN

Journal Articles

n‐type ion implantation doping of Al_xGa_1−xAs (0⩽x⩽0.7)

J. C. Zolper, J. F. Klem, A. G. Baca, M. E. Sherwin, M. J. Hafich, T. J. Drummond

J. Appl. Phys. 80, 2132–2137 (1996)

https://doi.org/10.1063/1.363556

Published: August 1996

View articletitled, n‐type ion implantation doping of AlxGa1−xAs (0⩽x⩽0.7)

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SiC via fabrication for wide-band-gap high electron mobility transistor/microwave monolithic integrated circuit devices

Self-heating study of an Al Ga N ∕ Ga N -based heterostructure field-effect transistor using ultraviolet micro-Raman scattering

Electronic properties of the AlGaN/GaN heterostructure and two-dimensional electron gas observed by electroreflectance

Comparison of stability of WSi X / SiC and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation

Improved morphology for ohmic contacts to AlGaN/GaN high electron mobility transistors using WSi x - or W-based metallization

Thermal stability of WSi x and W Schottky contacts on n- GaN

Observation of enhanced transport in carbon-doped InGaAsN after in situ anneal and its impact on performance of NpN InGaP/InGaAsN heterojunction bipolar transistors

Influence of MgO and Sc 2 O 3 passivation on AlGaN/GaN high-electron-mobility transistors

Influence of Co 60 γ-rays on dc performance of AlGaN/GaN high electron mobility transistors

dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors

Inductively coupled plasma-induced etch damage of GaN p-n junctions

Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors

Direct-current characteristics of pnp AlGaN/GaN heterojunction bipolar transistors

InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor

InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor

Oxygen implant isolation of n-GaN field-effect transistor structures

Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

Comparison of ohmic metallization schemes for InGaAlN

Thermal stability of W, WSi_x, and Ti/Al ohmic contacts to InGaN, InN, and InAlN

n‐type ion implantation doping of Al_xGa_1−xAs (0⩽x⩽0.7)

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