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Journal Articles

Misfit stress relaxation in wide bandgap semiconductor heterostructures with trigonal and hexagonal crystal structure

A. M. Smirnov, A. V. Kremleva, Sh. Sh. Sharofidinov, A. E. Romanov

J. Appl. Phys. 131, 025301 (2022)

https://doi.org/10.1063/5.0076893

Published: January 2022

View article titled, Misfit stress relaxation in wide bandgap semiconductor heterostructures with trigonal and hexagonal crystal structure

Includes: Supplementary data

Journal Articles

Amplitude dependence of internal friction and elastic modulus at ultrasonic frequencies in the Ni-Mn-Ga martensitic phase

V. V. Kaminskii, D. A. Kalganov, A. E. Romanov

AIP Conf. Proc. 2402, 020031 (2021)

https://doi.org/10.1063/5.0071345

Published: November 2021

View article titled, Amplitude dependence of internal friction and elastic modulus at ultrasonic frequencies in the Ni-Mn-Ga martensitic phase

Journal Articles

Stress relaxation in semipolar and nonpolar III-nitride heterostructures by formation of misfit dislocations of various origin

A. M. Smirnov, E. C. Young, V. E. Bougrov, J. S. Speck, A. E. Romanov

J. Appl. Phys. 126, 245104 (2019)

https://doi.org/10.1063/1.5126195

Published: December 2019

View article titled, Stress relaxation in semipolar and nonpolar III-nitride heterostructures by formation of misfit dislocations of various origin

Journal Articles

Disclination ensembles in graphene

M. A. Rozhkov, A. L. Kolesnikova, I. S. Yasnikov, A. E. Romanov

Low Temp. Phys. 44, 918–924 (2018)

https://doi.org/10.1063/1.5052677

Published: September 2018

View article titled, Disclination ensembles in graphene

Journal Articles

Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures

A. M. Smirnov, E. C. Young, V. E. Bougrov, J. S. Speck, A. E. Romanov

APL Mater. 4, 016105 (2016)

https://doi.org/10.1063/1.4939907

Published: January 2016

View article titled, Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures

Journal Articles

Reaction-kinetics model for threading dislocation density reduction in GaN porous layer

D. M. Artemiev, T. S. Orlova, V. E. Bougrov, M. A. Odnoblyudov, A. E. Romanov

AIP Conf. Proc. 1583, 310–314 (2014)

https://doi.org/10.1063/1.4865659

Published: February 2014

View article titled, Reaction-kinetics model for threading dislocation density reduction in GaN porous layer

Journal Articles

Mechanism of stress relaxation in (0001) InGaN/GaN via formation of V-shaped dislocation half-loops

A. V. Lobanova, A. L. Kolesnikova, A. E. Romanov, S. Yu. Karpov, M. E. Rudinsky, E. V. Yakovlev

Appl. Phys. Lett. 103, 152106 (2013)

https://doi.org/10.1063/1.4824835

Published: October 2013

View article titled, Mechanism of stress relaxation in (0001) InGaN/GaN via formation of V-shaped dislocation half-loops

Journal Articles

Observation of non-basal slip in semipolar In_xGa_1-xN/GaN heterostructures

Feng Wu, E. C. Young, I. Koslow, M. T. Hardy, P. S. Hsu, A. E. Romanov, S. Nakamura, S. P. DenBaars, J. S. Speck

Appl. Phys. Lett. 99, 251909 (2011)

https://doi.org/10.1063/1.3671113

Published: December 2011

View article titled, Observation of non-basal slip in semipolar In<sub>x</sub>Ga<sub>1-x</sub>N/GaN heterostructures

Journal Articles

Misfit dislocation formation at heterointerfaces in (Al,In)GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates

F. Wu, A. Tyagi, E. C. Young, A. E. Romanov, K. Fujito, S. P. DenBaars, S. Nakamura, J. S. Speck

J. Appl. Phys. 109, 033505 (2011)

https://doi.org/10.1063/1.3531577

Published: February 2011

View article titled, Misfit dislocation formation at heterointerfaces in (Al,In)GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates

Journal Articles

Cracking of III-nitride layers with strain gradients

A. E. Romanov, G. E. Beltz, P. Cantu, F. Wu, S. Keller, S. P. DenBaars, J. S. Speck

Appl. Phys. Lett. 89, 161922 (2006)

https://doi.org/10.1063/1.2352043

Published: October 2006

View article titled, Cracking of III-nitride layers with strain gradients

Journal Articles

Strain-induced polarization in wurtzite III-nitride semipolar layers

A. E. Romanov, T. J. Baker, S. Nakamura, J. S. Speck, ERATO/JST UCSB Group

J. Appl. Phys. 100, 023522 (2006)

https://doi.org/10.1063/1.2218385

Published: July 2006

View article titled, Strain-induced polarization in wurtzite III-nitride semipolar layers

Journal Articles

Modeling of twinning in epitaxial (001)-oriented La 0.67 Sr 0.33 MnO 3 thin films

N. Farag, M. Bobeth, W. Pompe, A. E. Romanov, J. S. Speck

J. Appl. Phys. 97, 113516 (2005)

https://doi.org/10.1063/1.1914950

Published: May 2005

View article titled, Modeling of twinning in epitaxial (001)-oriented La 0.67 Sr 0.33 MnO 3 thin films

Journal Articles

Role of inclined threading dislocations in stress relaxation in mismatched layers

P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, S. P. DenBaars, J. S. Speck

J. Appl. Phys. 97, 103534 (2005)

https://doi.org/10.1063/1.1897486

Published: May 2005

View article titled, Role of inclined threading dislocations in stress relaxation in mismatched layers

Journal Articles

Buried stressors in nitride semiconductors: Influence on electronic properties

A. E. Romanov, P. Waltereit, J. S. Speck

J. Appl. Phys. 97, 043708 (2005)

https://doi.org/10.1063/1.1851016

Published: January 2005

View article titled, Buried stressors in nitride semiconductors: Influence on electronic properties

Journal Articles

Investigation of dislocation loops associated with As–Sb nanoclusters in GaAs

V. V. Chaldyshev, A. L. Kolesnikova, N. A. Bert, A. E. Romanov

J. Appl. Phys. 97, 024309 (2005)

https://doi.org/10.1063/1.1833581

Published: December 2004

View article titled, Investigation of dislocation loops associated with As–Sb nanoclusters in GaAs

Journal Articles

Modeling crosshatch surface morphology in growing mismatched layers. Part II: Periodic boundary conditions and dislocation groups

A. M. Andrews, R. LeSar, M. A. Kerner, J. S. Speck, A. E. Romanov, A. L. Kolesnikova, M. Bobeth, W. Pompe

J. Appl. Phys. 95, 6032–6047 (2004)

https://doi.org/10.1063/1.1707208

Published: June 2004

View article titled, Modeling crosshatch surface morphology in growing mismatched layers. Part II: Periodic boundary conditions and dislocation groups

Journal Articles

Stress relaxation in mismatched layers due to threading dislocation inclination

A. E. Romanov, J. S. Speck

Appl. Phys. Lett. 83, 2569–2571 (2003)

https://doi.org/10.1063/1.1613360

Published: September 2003

View article titled, Stress relaxation in mismatched layers due to threading dislocation inclination

Journal Articles

Si doping effect on strain reduction in compressively strained Al 0.49 Ga 0.51 N thin films

P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, U. K. Mishra, S. P. DenBaars, J. S. Speck

Appl. Phys. Lett. 83, 674–676 (2003)

https://doi.org/10.1063/1.1595133

Published: July 2003

View article titled, Si doping effect on strain reduction in compressively strained Al 0.49 Ga 0.51 N thin films

Journal Articles

Modeling the extended defect evolution in lateral epitaxial overgrowth of GaN: Subgrain stability

A. E. Romanov, P. Fini, J. S. Speck

J. Appl. Phys. 93, 106–114 (2003)

https://doi.org/10.1063/1.1524013

Published: January 2003

View article titled, Modeling the extended defect evolution in lateral epitaxial overgrowth of GaN: Subgrain stability

Journal Articles

Electronic properties of GaN induced by a subsurface stressor

P. Waltereit, A. E. Romanov, J. S. Speck

Appl. Phys. Lett. 81, 4754–4756 (2002)

https://doi.org/10.1063/1.1524300

Published: December 2002

View article titled, Electronic properties of GaN induced by a subsurface stressor

NARROW

Topics

Misfit stress relaxation in wide bandgap semiconductor heterostructures with trigonal and hexagonal crystal structure

Amplitude dependence of internal friction and elastic modulus at ultrasonic frequencies in the Ni-Mn-Ga martensitic phase

Stress relaxation in semipolar and nonpolar III-nitride heterostructures by formation of misfit dislocations of various origin

Disclination ensembles in graphene

Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures

Reaction-kinetics model for threading dislocation density reduction in GaN porous layer

Mechanism of stress relaxation in (0001) InGaN/GaN via formation of V-shaped dislocation half-loops

Observation of non-basal slip in semipolar In_xGa_1-xN/GaN heterostructures

Misfit dislocation formation at heterointerfaces in (Al,In)GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates

Cracking of III-nitride layers with strain gradients

Strain-induced polarization in wurtzite III-nitride semipolar layers

Modeling of twinning in epitaxial (001)-oriented La 0.67 Sr 0.33 MnO 3 thin films

Role of inclined threading dislocations in stress relaxation in mismatched layers

Buried stressors in nitride semiconductors: Influence on electronic properties

Investigation of dislocation loops associated with As–Sb nanoclusters in GaAs

Modeling crosshatch surface morphology in growing mismatched layers. Part II: Periodic boundary conditions and dislocation groups

Stress relaxation in mismatched layers due to threading dislocation inclination

Si doping effect on strain reduction in compressively strained Al 0.49 Ga 0.51 N thin films

Modeling the extended defect evolution in lateral epitaxial overgrowth of GaN: Subgrain stability

Electronic properties of GaN induced by a subsurface stressor

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