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Journal Articles

Structure and electronic properties of biomorphic carbon matrices and SiC ceramics prepared on their basis

А. A. Konchits, B. D. Shanina, S. V. Krasnovyd, V. O. Yukhymchuk, O. M. Hreshchuk, M. Ya. Valakh, M. A. Skoryk, S. A. Kulinich, A. E. Belyaev, D. A. Iarmolenko

J. Appl. Phys. 124, 135703 (2018)

https://doi.org/10.1063/1.5042844

Published: October 2018

View article titled, Structure and electronic properties of biomorphic carbon matrices and SiC ceramics prepared on their basis

Journal Articles

Noise characterization of metal-single molecule contacts

D. Xiang, V. Sydoruk, S. Vitusevich, M. V. Petrychuk, A. Offenhäusser, V. A. Kochelap, A. E. Belyaev, D. Mayer

Appl. Phys. Lett. 106, 063702 (2015)

https://doi.org/10.1063/1.4908252

Published: February 2015

View article titled, Noise characterization of metal-single molecule contacts

Journal Articles

Measuring the depth profiles of strain/composition in AlGaN-graded layer by high-resolution x-ray diffraction

A. V. Kuchuk, H. V. Stanchu, Chen Li, M. E. Ware, Yu. I. Mazur, V. P. Kladko, A. E. Belyaev, G. J. Salamo

J. Appl. Phys. 116, 224302 (2014)

https://doi.org/10.1063/1.4904083

Published: December 2014

View article titled, Measuring the depth profiles of strain/composition in AlGaN-graded layer by high-resolution x-ray diffraction

Journal Articles

High-field quasi-ballistic transport in AlGaN/GaN heterostructures

B. A. Danilchenko, N. A. Tripachko, A. E. Belyaev, S. A. Vitusevich, H. Hardtdegen, H. Lüth

Appl. Phys. Lett. 104, 072105 (2014)

https://doi.org/10.1063/1.4866281

Published: February 2014

View article titled, High-field quasi-ballistic transport in AlGaN/GaN heterostructures

Journal Articles

A new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation density

A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, R. V. Konakova, Ya. Ya. Kudryk, S. V. Novitskii, V. N. Sheremet, A. O. Vinogradov, J. Li, S. A. Vitusevich

AIP Conf. Proc. 1566, 61–62 (2013)

https://doi.org/10.1063/1.4848285

Published: December 2013

View article titled, A new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation density

Journal Articles

Features of temperature dependence of contact resistivity in ohmic contacts on lapped n-Si

A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, A. O. Vinogradov, V. P. Kladko, R. V. Konakova, Ya. Ya. Kudryk, A. V. Kuchuk, V. N. Sheremet, S. A. Vitusevich

J. Appl. Phys. 112, 063703 (2012)

https://doi.org/10.1063/1.4752715

Published: September 2012

View article titled, Features of temperature dependence of contact resistivity in ohmic contacts on lapped <em>n-</em>Si

Journal Articles

Noise and transport characterization of single molecular break junctions with individual molecule

V. A. Sydoruk, D. Xiang, S. A. Vitusevich, M. V. Petrychuk, A. Vladyka, Y. Zhang, A. Offenhäusser, V. A. Kochelap, A. E. Belyaev, D. Mayer

J. Appl. Phys. 112, 014908 (2012)

https://doi.org/10.1063/1.4736558

Published: July 2012

View article titled, Noise and transport characterization of single molecular break junctions with individual molecule

Journal Articles

Mechanism of contact resistance formation in ohmic contacts with high dislocation density

A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, R. V. Konakova, Ya. Ya. Kudryk, S. V. Novitskii, V. N. Sheremet, J. Li, S. A. Vitusevich

J. Appl. Phys. 111, 083701 (2012)

https://doi.org/10.1063/1.3702850

Published: April 2012

View article titled, Mechanism of contact resistance formation in ohmic contacts with high dislocation density

Journal Articles

Confocal Raman depth-scanning spectroscopic study of phonon−plasmon modes in GaN epilayers

V. V. Strelchuk, V. P. Bryksa, K. A. Avramenko, M. Ya. Valakh, A. E. Belyaev, Yu. I. Mazur, M. E. Ware, E. A. DeCuir, Jr., G. J. Salamo

J. Appl. Phys. 109, 123528 (2011)

https://doi.org/10.1063/1.3599892

Published: June 2011

View article titled, Confocal Raman depth-scanning spectroscopic study of phonon−plasmon modes in GaN epilayers

Journal Articles

Synthesis and properties of porous SiC ceramics

V. S. Kiselov, P. M. Lytvyn, V. O. Yukhymchuk, A. E. Belyaev, S. A. Vitusevich

J. Appl. Phys. 107, 093510 (2010)

https://doi.org/10.1063/1.3407565

Published: May 2010

View article titled, Synthesis and properties of porous SiC ceramics

Journal Articles

Mechanism of strain relaxation by twisted nanocolumns revealed in AlGaN/GaN heterostructures

V. P. Kladko, A. V. Kuchuk, N. V. Safryuk, V. F. Machulin, A. E. Belyaev, H. Hardtdegen, S. A. Vitusevich

Appl. Phys. Lett. 95, 031907 (2009)

https://doi.org/10.1063/1.3184569

Published: July 2009

View article titled, Mechanism of strain relaxation by twisted nanocolumns revealed in AlGaN/GaN heterostructures

Journal Articles

Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures

A. M. Kurakin, S. A. Vitusevich, S. V. Danylyuk, H. Hardtdegen, N. Klein, Z. Bougrioua, A. V. Naumov, A. E. Belyaev

J. Appl. Phys. 105, 073703 (2009)

https://doi.org/10.1063/1.3100206

Published: April 2009

View article titled, Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures

Journal Articles

Internal strains and crystal structure of the layers in AlGaN/GaN heterostructures grown on a sapphire substrate

V. P. Kladko, A. F. Kolomys, M. V. Slobodian, V. V. Strelchuk, V. G. Raycheva, A. E. Belyaev, S. S. Bukalov, H. Hardtdegen, V. A. Sydoruk, N. Klein, S. A. Vitusevich

J. Appl. Phys. 105, 063515 (2009)

https://doi.org/10.1063/1.3094022

Published: March 2009

View article titled, Internal strains and crystal structure of the layers in AlGaN/GaN heterostructures grown on a sapphire substrate

Journal Articles

Mechanism of mobility increase of the two-dimensional electron gas in Al Ga N ∕ Ga N heterostructures under small dose gamma irradiation

A. M. Kurakin, S. A. Vitusevich, S. V. Danylyuk, H. Hardtdegen, N. Klein, Z. Bougrioua, B. A. Danilchenko, R. V. Konakova, A. E. Belyaev

J. Appl. Phys. 103, 083707 (2008)

https://doi.org/10.1063/1.2903144

Published: April 2008

View article titled, Mechanism of mobility increase of the two-dimensional electron gas in Al Ga N ∕ Ga N heterostructures under small dose gamma irradiation

Journal Articles

Mechanisms of current formation in resonant tunneling Al N ∕ Ga N heterostructures

M. V. Petrychuk, A. E. Belyaev, A. M. Kurakin, S. V. Danylyuk, N. Klein, S. A. Vitusevich

Appl. Phys. Lett. 91, 222112 (2007)

https://doi.org/10.1063/1.2817752

Published: November 2007

View article titled, Mechanisms of current formation in resonant tunneling Al N ∕ Ga N heterostructures

Journal Articles

Enhancement by electric field of high-speed photoconductivity in Al Ga N ∕ Ga N heterostructures

B. A. Danilchenko, S. E. Zelensky, E. A. Drok, A. E. Belyaev, V. A. Kochelap, H. Lüth, S. A. Vitusevich

Appl. Phys. Lett. 90, 152102 (2007)

https://doi.org/10.1063/1.2721126

Published: April 2007

View article titled, Enhancement by electric field of high-speed photoconductivity in Al Ga N ∕ Ga N heterostructures

Journal Articles

Nature of low-energy optical emission in doped Al Ga N ∕ Ga N heterostructures

A. E. Belyaev, A. V. Naumov, G. G. Tarasov, A. V. Komarov, M. Tacano, S. V. Danylyuk, S. A. Vitusevich

J. Appl. Phys. 101, 033709 (2007)

https://doi.org/10.1063/1.2434821

Published: February 2007

View article titled, Nature of low-energy optical emission in doped Al Ga N ∕ Ga N heterostructures

Journal Articles

Origin of noise in Al Ga N ∕ Ga N heterostructures in the range of 10 – 100 MHz

S. A. Vitusevich, S. V. Danylyuk, A. M. Kurakin, N. Klein, A. Offenhäusser, M. V. Petrychuk, A. E. Belyaev

J. Appl. Phys. 99, 073706 (2006)

https://doi.org/10.1063/1.2188048

Published: April 2006

View article titled, Origin of noise in Al Ga N ∕ Ga N heterostructures in the range of 10 – 100 MHz

Journal Articles

High‐Frequency Noise In AlGaN/GaN Heterostructures

S. A. Vitusevich, M. V. Petrychuk, S. V. Danylyuk, A. M. Kurakin, A. E. Belyaev, N. Klein

AIP Conf. Proc. 800, 131–136 (2005)

https://doi.org/10.1063/1.2138604

Published: November 2005

View article titled, High‐Frequency Noise In AlGaN/GaN Heterostructures

Journal Articles

Dynamic redistribution of the electric field of the channel in Al Ga N ∕ Ga N high electron mobility transistor with nanometer-scale gate length

S. A. Vitusevich, S. V. Danylyuk, A. M. Kurakin, N. Klein, H. Lüth, M. V. Petrychuk, A. E. Belyaev

Appl. Phys. Lett. 87, 192110 (2005)

https://doi.org/10.1063/1.2128067

Published: November 2005

View article titled, Dynamic redistribution of the electric field of the channel in Al Ga N ∕ Ga N high electron mobility transistor with nanometer-scale gate length

NARROW

Topics

Structure and electronic properties of biomorphic carbon matrices and SiC ceramics prepared on their basis

Noise characterization of metal-single molecule contacts

Measuring the depth profiles of strain/composition in AlGaN-graded layer by high-resolution x-ray diffraction

High-field quasi-ballistic transport in AlGaN/GaN heterostructures

A new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation density

Features of temperature dependence of contact resistivity in ohmic contacts on lapped n-Si

Noise and transport characterization of single molecular break junctions with individual molecule

Mechanism of contact resistance formation in ohmic contacts with high dislocation density

Confocal Raman depth-scanning spectroscopic study of phonon−plasmon modes in GaN epilayers

Synthesis and properties of porous SiC ceramics

Mechanism of strain relaxation by twisted nanocolumns revealed in AlGaN/GaN heterostructures

Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures

Internal strains and crystal structure of the layers in AlGaN/GaN heterostructures grown on a sapphire substrate

Mechanism of mobility increase of the two-dimensional electron gas in Al Ga N ∕ Ga N heterostructures under small dose gamma irradiation

Mechanisms of current formation in resonant tunneling Al N ∕ Ga N heterostructures

Enhancement by electric field of high-speed photoconductivity in Al Ga N ∕ Ga N heterostructures

Nature of low-energy optical emission in doped Al Ga N ∕ Ga N heterostructures

Origin of noise in Al Ga N ∕ Ga N heterostructures in the range of 10 – 100 MHz

High‐Frequency Noise In AlGaN/GaN Heterostructures

Dynamic redistribution of the electric field of the channel in Al Ga N ∕ Ga N high electron mobility transistor with nanometer-scale gate length

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