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Journal Articles

Electrically tunable dynamic nuclear spin polarization in GaAs quantum dots at zero magnetic field

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M. Manca, G. Wang, T. Kuroda, S. Shree, A. Balocchi, P. Renucci, X. Marie, M. V. Durnev, M. M. Glazov, K. Sakoda, T. Mano, T. Amand, B. Urbaszek
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 142103 (2018)
https://doi.org/10.1063/1.5024619
Published: April 2018
View articletitled, Electrically tunable dynamic nuclear spin polarization in GaAs quantum dots at zero magnetic field
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Journal Articles

Control of the electron spin relaxation by the built-in piezoelectric field in InGaAs quantum wells

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S. Azaizia, A. Balocchi, H. Carrère, P. Renucci, T. Amand, A. Arnoult, C. Fontaine, X. Marie
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 082103 (2016)
https://doi.org/10.1063/1.4942600
Published: February 2016
View articletitled, Control of the electron spin relaxation by the built-in piezoelectric field in InGaAs quantum wells
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Journal Articles

GaSb-based composite quantum wells for laser diodes operating in the telecom wavelength range near 1.55-μm

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L. Cerutti, A. Castellano, J.-B. Rodriguez, M. Bahri, L. Largeau, A. Balocchi, K. Madiomanana, F. Lelarge, G. Patriarche, X. Marie, E. Tournié
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 101102 (2015)
https://doi.org/10.1063/1.4914884
Published: March 2015
View articletitled, GaSb-based composite quantum wells for laser diodes operating in the telecom wavelength range near 1.55-μm
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Journal Articles

Effect of the nitrogen incorporation and fast carrier dynamics in (In,Ga)AsN/GaP self-assembled quantum dots

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J.-P. Gauthier, C. Robert, S. Almosni, Y. Léger, M. Perrin, J. Even, A. Balocchi, H. Carrère, X. Marie, C. Cornet, O. Durand
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 243111 (2014)
https://doi.org/10.1063/1.4904939
Published: December 2014
View articletitled, Effect of the nitrogen incorporation and fast carrier dynamics in (In,Ga)AsN/GaP self-assembled quantum dots
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Journal Articles

Exciton dynamics in WSe2 bilayers

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G. Wang, X. Marie, L. Bouet, M. Vidal, A. Balocchi, T. Amand, D. Lagarde, B. Urbaszek
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 182105 (2014)
https://doi.org/10.1063/1.4900945
Published: November 2014
View articletitled, Exciton dynamics in WSe2 bilayers
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Journal Articles

Spin noise spectroscopy of ZnO

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H. Horn, F. Berski, A. Balocchi, X. Marie, M. Mansur-Al-Suleiman, A. Bakin, A. Waag, J. Hübner, M. Oestreich
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1566, 69–70 (2013)
https://doi.org/10.1063/1.4848289
Published: December 2013
View articletitled, Spin noise spectroscopy of ZnO
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Journal Articles

Fabrication of an InGaAs spin filter by implantation of paramagnetic centers

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C. T. Nguyen, A. Balocchi, D. Lagarde, T. T. Zhang, H. Carrère, S. Mazzucato, P. Barate, E. Galopin, J. Gierak, E Bourhis, J. C. Harmand, T. Amand, X. Marie
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 052403 (2013)
https://doi.org/10.1063/1.4816970
Published: July 2013
View articletitled, Fabrication of an InGaAs spin filter by implantation of paramagnetic centers
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Journal Articles

Electron spin dynamics and g-factor in GaAsBi

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S. Mazzucato, T. T. Zhang, H. Carrère, D. Lagarde, P. Boonpeng, A. Arnoult, G. Lacoste, A. Balocchi, T. Amand, C. Fontaine, X. Marie
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 252107 (2013)
https://doi.org/10.1063/1.4812660
Published: June 2013
View articletitled, Electron spin dynamics and g-factor in GaAsBi
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Journal Articles

Temperature dependent electric field control of the electron spin relaxation in (111)A GaAs quantum wells

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G. Wang, A. Balocchi, D. Lagarde, C. R. Zhu, T. Amand, P. Renucci, Z. W. Shi, W. X. Wang, B. L. Liu, X. Marie
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 242408 (2013)
https://doi.org/10.1063/1.4811555
Published: June 2013
View articletitled, Temperature dependent electric field control of the electron spin relaxation in (111)A GaAs quantum wells
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Journal Articles

Publisher's Note: “Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells” [J. Appl. Phys. 113, 123509 (2013)]

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S. Almosni, C. Robert, T. Nguyen Thanh, C. Cornet, A. Létoublon, T. Quinci, C. Levallois, M. Perrin, J. Kuyyalil, L. Pedesseau, A. Balocchi, P. Barate, J. Even, J. M. Jancu, N. Bertru, X. Marie, O. Durand, A. Le Corre
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 169902 (2013)
https://doi.org/10.1063/1.4802907
Published: April 2013
View articletitled, Publisher's Note: “Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells” [J. Appl. Phys. 113, 123509 (2013)]
Open the PDF for Publisher's Note: “Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells” [J. Appl. Phys. 113, 123509 (2013)] in another window
Journal Articles

Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells

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S. Almosni, C. Robert, T. Nguyen Thanh, C. Cornet, A. Létoublon, T. Quinci, C. Levallois, M. Perrin, J. Kuyyalil, L. Pedesseau, A. Balocchi, P. Barate, J. Even, J. M. Jancu, N. Bertru, X. Marie, O. Durand, A. Le Corre
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 123509 (2013)
https://doi.org/10.1063/1.4798363
Published: March 2013
View articletitled, Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells
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Journal Articles

Publisher's Note: “Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on silicon” [J. Appl. Phys. 112, 053521 (2012)]

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T. Nguyen Thanh, C. Robert, W. Guo, A. Létoublon, C. Cornet, G. Elias, A. Ponchet, T. Rohel, N. Bertru, A. Balocchi, O. Durand, J. S. Micha, M. Perrin, S. Loualiche, X. Marie, A. Le Corre
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 079904 (2012)
https://doi.org/10.1063/1.4756922
Published: October 2012
View articletitled, Publisher's Note: “Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on silicon” [J. Appl. Phys. 112, 053521 (2012)]
Open the PDF for Publisher's Note: “Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on silicon” [J. Appl. Phys. 112, 053521 (2012)] in another window
Journal Articles

Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on silicon

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T. Nguyen Thanh, C. Robert, W. Guo, A. Létoublon, C. Cornet, G. Elias, A. Ponchet, T. Rohel, N. Bertru, A. Balocchi, O. Durand, J. S. Micha, M. Perrin, S. Loualiche, X. Marie, A. Le Corre
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 053521 (2012)
https://doi.org/10.1063/1.4751024
Published: September 2012
View articletitled, Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on silicon
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Journal Articles

Growth direction dependence of the electron spin dynamics in {111} GaAs quantum wells

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H. Q. Ye, G. Wang, B. L. Liu, Z. W. Shi, W. X. Wang, C. Fontaine, A. Balocchi, T. Amand, D. Lagarde, P. Renucci, X. Marie
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 032104 (2012)
https://doi.org/10.1063/1.4737007
Published: July 2012
View articletitled, Growth direction dependence of the electron spin dynamics in {111} GaAs quantum wells
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Journal Articles

Optical alignment of the exciton in ZnO nanoparticles

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P.-M. Chassaing, A. Balocchi, T. Amand, L. Saint-Macary, M. L. Kahn, B. Chaudret, X. Marie
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 192112 (2010)
https://doi.org/10.1063/1.3504252
Published: November 2010
View articletitled, Optical alignment of the exciton in ZnO nanoparticles
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Journal Articles

Erratum: “Spin-dependent photoconductivity in nonmagnetic semiconductors at room temperature” [Appl. Phys. Lett. 95, 241104 (2009)]

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F. Zhao, A. Balocchi, A. Kunold, J. Carrey, H. Carrère, T. Amand, N. Ben Abdallah, J. C. Harmand, X. Marie
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 239904 (2010)
https://doi.org/10.1063/1.3449140
Published: June 2010
View articletitled, Erratum: “Spin-dependent photoconductivity in nonmagnetic semiconductors at room temperature” [Appl. Phys. Lett. 95, 241104 (2009)]
Open the PDF for Erratum: “Spin-dependent photoconductivity in nonmagnetic semiconductors at room temperature” [Appl. Phys. Lett. 95, 241104 (2009)] in another window
Journal Articles

Electron spin filtering by thin GaNAs/GaAs multiquantum wells

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Y. Puttisong, X. J. Wang, I. A. Buyanova, H. Carrére, F. Zhao, A. Balocchi, X. Marie, C. W. Tu, W. M. Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 052104 (2010)
https://doi.org/10.1063/1.3299015
Published: February 2010
View articletitled, Electron spin filtering by thin GaNAs/GaAs multiquantum wells
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Journal Articles

Spin-dependent photoconductivity in nonmagnetic semiconductors at room temperature

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F. Zhao, A. Balocchi, A. Kunold, J. Carrey, H. Carrère, T. Amand, N. Ben Abdallah, J. C. Harmand, X. Marie
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 241104 (2009)
https://doi.org/10.1063/1.3273393
Published: December 2009
View articletitled, Spin-dependent photoconductivity in nonmagnetic semiconductors at room temperature
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Journal Articles

Optical and spin coherence of excitons in zinc-blende GaN

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C. Brimont, M. Gallart, O. Crégut, B. Hönerlage, P. Gilliot, D. Lagarde, A. Balocchi, T. Amand, X. Marie, S. Founta, H. Mariette
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 053514 (2009)
https://doi.org/10.1063/1.3197035
Published: September 2009
View articletitled, Optical and spin coherence of excitons in zinc-blende GaN
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Journal Articles

Stable fiber-based Fabry-Pérot cavity

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T. Steinmetz, Y. Colombe, D. Hunger, T. W. Hänsch, A. Balocchi, R. J. Warburton, J. Reichel
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 111110 (2006)
https://doi.org/10.1063/1.2347892
Published: September 2006
View articletitled, Stable fiber-based Fabry-Pérot cavity
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