The invention of the transistor in the late 1940s has had tremendous technological ramifications, heralding as it did an era of semiconductor microelectronics. At the heart of the transistor's device applications are its ability to amplify and the ease with which it can be fabricated in very complex integrated circuits.

1.
J.
Bardeen
,
W. H.
Brattain
,
Phys. Rev.
74
,
230
(
1949
);
J.
Bardeen
,
W. H.
Brattain
,
Phys. Rev.
75
,
1208
(
1949
).
W.
Shockley
,
Bell Syst. Tech. J.
28
,
435
(
1949
).
2.
H.
Kroemer
,
Proc. IRE
45
,
1535
(
1957
);
H.
Kroemer
,
Proc. IEEE
70
,
13
(
1983
).
3.
P. M.
Asbeck
,
M. F.
Chang
,
K. C.
Wang
,
D. L.
Miller
,
G. J.
Sullivan
,
N. H.
Sheng
,
E.
Sovero
,
J. A.
Higgins
,
IEEE Trans. Electron Devices
34
,
2571
(
1987
).
T. Ishibashi, O. Nakajima, K. Nagata, Y. Yamauchi, H. Ito, T. Nittono, Proc. IEDM 88, IEEE, New York (1988) p. 826.
4.
For a review, see A. F. J. Levi, S. Schmitt‐Rink, in Spectroscopy of Nonequilibrium Electrons and Phonons, C. V. Shank, B. P. Zakharchenya, eds., North‐Holland, Amsterdam (1990), to be published.
5.
M. B.
Panish
,
H.
Temkin
,
Annu. Rev. Mater. Sci.
19
,
209
(
1989
).
6.
K.
Berthold
,
A. F. J.
Levi
,
J.
Walker
,
R. J.
Malik
,
Appl. Phys. Lett.
52
,
2247
(
1988
).
P. H.
Beton
,
A. F. J.
Levi
,
Appl. Phys. Lett.
55
,
250
(
1989
).
7.
A. F. J.
Levi
,
Electron. Lett.
24
,
1273
(
1988
).
8.
R. N.
Nottenburg
,
Y. K.
Chen
,
M. B.
Panish
,
R. A.
Hamm
,
D. A.
Humphrey
,
IEEE Electron Device Lett.
10
,
30
(
1989
).
Y. K.
Chen
,
R. N.
Nottenburg
,
M. B.
Panish
,
R. A.
Hamm
,
D. A.
Humphrey
,
IEEE Electron Device Lett.
10
,
267
(
1989
).
9.
B. Y.
Gelfand
,
S.
Schmitt‐Rink
,
A. F. J.
Levi
,
Phys. Rev. Lett.
62
,
1683
(
1989
).
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