In the industrialized world, we are seldom more than a few meters from a crystal of silicon. One crystal may be strapped to our wrist, in an electronic watch; others may be buried within a nearby calculator, video recorder or auto ignition system—indeed, one may even be lurking in the quartz movement of a new “antique” clock. These crystals are extraordinarily perfect: No more than than one atom in 1013 is out of a proper lattice site, and the total impurity concentration may be less than 0.1 parts per billion. Yet a microprocessor or a megabit memory can be fabricated in a crystal of silicon costing only 15–20 cents

1.
For a recent collection of research papers see J. C. Bean, ed., Proc. First Int. Symp. on Silicon Molecular Beam Epitaxy, Proc. Vol. PV 85‐7, Electrochem. Soc. Press, Pennington, N.J. (1985).
2.
E. Kasper, J. C. Bean, eds., Silicon Molecular Beam Epitaxy, CRC, Boca Raton, Fla., in press.
3.
J. C.
Bean
,
Science
230
,
127
(
1985
), and references therein.
4.
H. Temkin, A. Antreasyan, N. A. Olsson, T. P. Pearsall, J. C. Bean, Appl. Phys. Lett., in press.
5.
For a recent review, see R. T. Tung, A. F. J. Levi, J. M. Gibson, J. Vac. Sci. Technol., in press.
6.
D. B.
Cherns
,
G. R.
Anstis
,
J. L.
Hutchinson
,
J. C. H.
Spence
,
Philos. Mag.
A46
,
849
(
1982
).
7.
R. T.
Tung
,
Phys. Rev. Lett.
52
,
461
(
1984
).
8.
R. J.
Hauenstein
,
T. E.
Schlesinger
,
T. C.
McGill
,
D. B.
Hunt
,
L. J.
Schowalter
,
Appl. Phys. Lett.
47
,
853
(
1985
).
9.
E.
Rosencher
,
S.
Delage
,
Y.
Campidelli
,
F.
Arnaud d'Avitaya
,
Electron. Lett.
20
,
762
(
1984
).
10.
J. C.
Hensel
,
A. F. J.
Levi
,
R. T.
Tung
,
J. M.
Gibson
,
Appl. Phys. Lett.
47
,
151
(
1985
).
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