The advances in design, performance, cost reduction, and brightness for the modern Yb fiber laser have opened up the possibility of redefining the processing options of semiconductor materials at a wavelength of 1064nm. The usual laser of choice for Si processing is the 532, 355, or 266 nm DPSS system. The provision of a new MOPA high brightness Yb based fiber laser configuration has provided a range of pulse parameters (10-200 ns FWHM), peak powers approaching ~ 2G Wcm−2, pulse repetition rates up to 500 kHz. These processing parameters offer a broad range of material response characteristics. This paper provides a preliminary analysis of the response of Si to the new MOPA based Yb laser operating at maximum average power of 20W.

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