At the present time, lasers are being used in many microelectronics applications, and the use of lasers to repair photolithographic mask defects and deposition metal and polysilicon lines for discretionary interconnects in integrated circuit is beginning to receive attention. Despite the interest that exists for laser processing of IC’s, there are still many aspects of laser deposition technology that are not well understood. For example, it is unclear why the use of laser chemical vapor deposition (LCVD) to deposit thin films leads to deposition rate enhancement relative to conventional chemical vapor deposition (CVD). Also the observation of volcanic film profiles during LCVD is not well understood. While numerous models have postulated the factors affecting deposition rate and volcanic profiles, few experimental studies have been performed to study these phenomena.

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