At the present time, lasers are being used in many microelectronics applications, and the use of lasers to repair photolithographic mask defects and deposition metal and polysilicon lines for discretionary interconnects in integrated circuit is beginning to receive attention. Despite the interest that exists for laser processing of IC’s, there are still many aspects of laser deposition technology that are not well understood. For example, it is unclear why the use of laser chemical vapor deposition (LCVD) to deposit thin films leads to deposition rate enhancement relative to conventional chemical vapor deposition (CVD). Also the observation of volcanic film profiles during LCVD is not well understood. While numerous models have postulated the factors affecting deposition rate and volcanic profiles, few experimental studies have been performed to study these phenomena.
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ICALEO '93: Proceedings of the Applying Lasers in Education Symposium
October 24–28, 1993
Orlando, Florida, USA
ISBN:
978-0-912035-50-5
PROCEEDINGS PAPER
Substrate temperature measurement diagnostics during laser chemical vapor deposition (LCVD) of titanium on silicon Available to Purchase
Magdi N. Azer;
Magdi N. Azer
Center for Laser-Aided Materials Processing Dept. of Mechanical and Industrial Engineering, University of Illinois at Urbana-Champaign
Urbana, Illinois 61801, USA
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J. Mazumder
J. Mazumder
Center for Laser-Aided Materials Processing Dept. of Mechanical and Industrial Engineering, University of Illinois at Urbana-Champaign
Urbana, Illinois 61801, USA
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Published Online:
October 01 1993
Citation
Magdi N. Azer, J. Mazumder; October 24–28, 1993. "Substrate temperature measurement diagnostics during laser chemical vapor deposition (LCVD) of titanium on silicon." Proceedings of the ICALEO '93: Proceedings of the Applying Lasers in Education Symposium. ICALEO '93: Proceedings of the Laser Materials Processing Conference. Orlando, Florida, USA. (pp. pp. 584-593). ASME. https://doi.org/10.2351/1.5058620
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