This paper presents the experimental studies of laser-assisted chemical vapor deposition of TiN films on Si(100) from a reactant gas mixture of TiCl4, N2, and H2. Laser-induced fluorescence spectroscopy is applied to obtain gas phase species concentration during deposition in order to study the reaction and film growth mechanisms. Ti atomic species are found close to the substrate surface with concentrations in the order of 1011 cm-3.
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© 1994 Laser Institute of America.
1994
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