Semiconductor lasers grown by MO-CVD

Metal-organic chemical vapor deposition (MO-CVD) is a vapor phase process for growing thin multilayer semiconductor films by pyrolysis of metal alkyls and hydrides. The MO-CVD process provides excellent control over the thickness, uniformity, doping density, alloy composition and interface quality of the grown films. Growth rates of 2500 to 3000 Å/min permit layers of 50 Å or less to be grown reproducibly. These characteristics make this technology especially suitable for economic and reproducible production of large uniform wafers of multilayer semiconductor laser material.