A photo-excited carrier integrated semiconductor model to predict the non-equilibrium thermal transport in Ge2Sb2Te5 thin films under the ultrafast pulsed laser Available to Purchase

In this paper, a two-temperature semiconductor model was used to investigate the non-equilibrium thermal transport in Ge2Sb2Te5 thin films caused by irradiation with ultrashort laser pulses ranging from femto- to picoseconds. Photo-excited carriers were considered based on the semiconductor absorbing mechanism in a self-consistent model. As a general rule, shorter pulses led to faster thermal equilibrium between carrier and lattice systems. However, a minimum time (∼ 80 ps) to achieve thermal equilibrium between the carrier and lattice system was obtained for femtosecond laser pulses, as the thermal equilibrium rate was mainly determined by material properties instead of the pulse width, which significantly affected the ultrafast temperature rise of the carrier system. The carrier density had a strong influence to the temperatures of both the carrier and lattice systems, and photo-excited carriers played an important role in the first 40 ps during the thermal equilibrium under the femtosecond laser pulse.