Direct imprinting of few-layer graphene on amorphous graphite film by femtosecond laser direct write technique

We demonstrated a method of fabricating large-area, few-layer graphene that involves performing femtosecond laser direct writing technology (FLDWT) on amorphous carbon films at a normal temperature. Amorphous carbon (A-C) films were deposited by PLD technology on Si surface. The thickness of the films was 200 nm. Arbitrary patterns designed by computer aided design software were fabricated directly on Si substrates without additional mask or setup. Compared to other reduction techniques, it is single-step, facile, and can be performed at room temperature in ambient atmosphere. Meanwhile, it was fabricated for the large areas few-layer graphene of arbitrary patterns. The laser direct writing process was also conducted at different laser influences and pulse number, and it was observed that the few-layer graphene could be obtained at an optimal laser influence. With the pulse number increasing, the defect of the few-layer graphene films was reduced. The formation of few-layer graphene was attributable to the recombination of C-atom clusters through the multi-photon absorption at an optimum laser fluence. Arbitrary patterns of few-layer graphene through femtosecond laser direct writing technologies may open the door for applications of graphene-based materials in electronic micro-devices. The discovery and development of the FLDWT growth process provide a route for the rapid fabrication of graphene-based electronic device.