Fabrication of graphene patterns directly on SiO₂/Si substrates using laser-induced chemical vapor deposition Available to Purchase

Direct fabrication of graphene patterns on silicon dioxide/silicon (SiO₂/Si) substrates was achieved using a laser-induced chemical vapor deposition process. The graphene patterns were fabricated in a CH₄/H₂ environment. Irradiation on a nickel-coated SiO₂/Si substrate using a 532 nm laser beam with a power of 5 W induced an instant local temperature rise which facilitated the dissociation of the precursor gases. A fast cooling process as laser retracted lead to a fast precipitation of carbon and growth of graphene on the laser scanning path. Dewetting and evaporation of nickel thin film during the graphene growth process was observed. Raman spectroscopy was performed to identify the graphene, which indicates high-quality mono-layer graphene was obtained in the center of laser scanning path and the layer numbers of the graphene increases from the center area to the outer edge area. Graphene patterns were left on SiO₂/Si substrates with a post-growth nickel removing process, which demonstrates the ability of direct fabrication of graphene patterns on dielectric substrates. Energy dispersive x-ray diffraction spectroscopy was used to track the nickel trace, which indicates no nickel left under the graphene patterns after the post-growth nickel removing process. The development of the laser-induced chemical vapor deposition process provides a promising route for the rapid fabrication of graphene devices.