Laser materials synthesis of a wide bandgap energy convertor with embedded concentrator and DC-AC inverter Available to Purchase

The laser materials synthesis building blocks to process an embedded lens and inverter circuit in a wide bandgap material direct energy converter are presented. A single crystalline silicon carbide wafer is wide area laser doped with aluminum, chromium and nitrogen to optimize conversion of electromagnetic radiation to electrical energy. The laser doping process is based on solid state diffusion at temperatures below the melting point of the substrate; consequently, the original surface roughness of the substrate is preserved. The dopant precursor can be gas or solid. Laser doping and laser conversion processing can also be employed to fabricate an embedded DC to AC inverter circuit and an embedded focusing lens structure in the top surface for concentrating electromagnetic radiation. Nd: YAG Q-switched lasers (1064 nm, 532 nm and 355 nm wavelengths, 100 W power or less) integrated with computer controlled wide area processing systems were used.