On the percussion drilling of Si using a 20W MOPA based Yb fiber laser Available to Purchase

A study on the nanosecond fiber laser interaction with silicon was performed experimentally for the generation of percussion drilled holes. Single pulse ablation experiments were carried out on mono crystalline 650µm thick Si wafers. Changes of the mass removal mechanism were investigated by varying laser fluence up to 68 J/cm² and pulse duration from 50 ns to 200 ns. Hole width and depth were measured and surface morphology were studied using scanning electron microscopy (SEM) and optical interferometric profilometry (Veeco NT3300). High speed photography was also used to examine laser generated plasma expansion rates. The material removal rate was found to be influenced by the pulse energy, full pulse duration and pulse peak power. Single pulse ablation depth of 4.42 µm was achieved using a 200 ns pulse of 13.3 J/cm², giving a maximum machining efficiency of 31.86 µm per mJ. Holes drilled with an increased fluence but fixed pulse length were deeper, exhibited low recast, but were less efficient than those produced at a lower fluence. The increased peak power in this case led to high levels of plasma and vapour production. The expansion of which, results in a strong driving recoil force, an increase in the rate and volume of melt ejection, and cleaner hole formation. The experimental findings show that for efficient drilling at a given energy, a longer, lower peak power pulse is more desirable than a high peak power short pulse.