Renewable energies is a prominent, emerging industry whose momentum suggests surging growth. The promise of a contact-less, precise, high throughput laser tool that enhances solar cell production will be vital in current and future photovoltaic manufacturing. Establishing lasers as an essential part of the manufacturing chain is the major goal of the European funded SOLASYS1 project (“Next Generation Solar Cell and Module Laser Processing Systems”).

The selective emitter concept is one of the key subjects in the race to grid parity solar cell production. Instead of using an intermediate doping concentration to meet both the demand for high carrier lifetimes and for low contact resistance the doping concentration is increased locally at the positions of the front contacts. This can be achieved by laser doping the contact region before metal deposition. The selection of the proper laser parameters, such as wavelength, pulse length and laser power, allows control of the depth of the doping profile and the dopant concentration.

1.
European Photovoltaic Industry Association EPIA. Global market outlook until
2013
. www.epia.org, April 2009.
2.
M.
Lozach
,
R.
Monna
,
Y.
Veschetti
,
N.
Enjalbert
,
M.
Pirot
, and
A.
Bettinelli
.
Selective emitter formation by pocl3 or ’spin on’ source diffusion for industrial large scale mc-si solar cells
. In
Proceedings of 22nd European Photovoltaic Solar Energy Conference
, 3-7 September 2007, Milan, Italy,
2007
.
3.
R.
Monna
,
N.
Enjalbert
,
Y.
Veschetti
,
M.
Lozach
, and
M.
Pirot
.
17.8% efficiency obtained on c-si solar cells using a selective emitter industrial type process
. In
Proceedings of 23rd European Photovoltaic Solar Energy Conference
,
Valencia, Spain
,
2008
.
4.
Sybille
Hopman
,
Andreas
Fell
,
Kuno
Mayer
,
Monica
Aleman
,
Matthias
Mesec
,
Ralf
Mueller
,
Daniel
Kray
, and
Gerhard P.
Willeke
.
Characterization of laser doped silicon wafers with laser chemical processing
. In
22nd European Photovoltaic Solar Energy Conference
,
2007
.
5.
M.A.
Green
and
M.
Keevers
.
Optical properties of intrinsic silicon at 300 k
.
Progress in Photovoltaics: Research and Applications
,
3
:
189
192
,
1995
.
6.
C.
Carlsson
,
A.
Esturo-Breton
,
M.
Ametowobla
,
J.R.
Koehler
, and
J. H.
Werner
.
Laser doping of textured monocrystalline silicon wafers
. In
22nd European Photovoltaic Solar Energy Conference
,
2007
.
7.
B. S.
Tjahjono
,
J. H.
Guo
,
Z.
Hameiri
,
L.
Mai
,
A.
Sugianto
,
S.
Wang
, and
S. R.
Wenham
.
High efficiency solar cell structures through the use of laser doping
. In
22nd European Photovoltaic Solar Energy Conference
,
2007
.
8.
M.
Ametowobla
,
J.R.
Koehler
,
A.
Esturo-Breton
, and
J.H.
Werner
.
Improved laser doping for silicon solar cells
. In
22nd European Photovoltaic Solar Energy Conference
,
2007
.
9.
M.C.
Morilla
,
R.
Russell
, and
J.M.
Fernandez
.
Laser induced ablation and doping processes on high efficiency silicon solar cells
. In
23rd European Photovoltaic Solar Energy Conference
,
2008
.
This content is only available via PDF.
You do not currently have access to this content.