The paper discusses the fundamental interaction between laser light and crystalline silicon within a broad range of laser parameters, especially the pulse duration, with relevance for cutting and drilling. For laser processing of silicon the absorption at the laser wavelength and the sensitivity of the material to thermal stresses are dominant. Using laser sources with wavelengths near the indirect band-gap and with rising temperatures the optical behaviour of silicon changes significantly. A comparison of processing with different pulse durations at the same wavelength from ultra-short picosecond pulses up to microsecond pulses is presented. The material removal processes such as melt ejection and vaporization are studied. The influence of the laser radiation wavelength on the processing is briefly discussed. The relevance of this work for some applications, like wafer dicing in the electronics industry and photovoltaic applications will be discussed as well.

1.
G.
Emanuel
, et al:
High throughput laser isolation of crystalline silicon solar cells
,
Proc. of 17th European Photovoltaic Solar Energy Conference
,
Munich
,
1578
1581
,
2001
2.
T.
Grahl
(In German):
Materialsparende Herstellung von Si-wafern aus dünnwandigen EFG Rohren mittels Laserschneiden
.
Proc. of Technology Seminar, Laseranwendung in der Photovoltaik
,
Göttingen
,
2005
3.
O.
Haupt
et al:
Laser Dicing of Silicon: Comparison of Ablation Mechanism with a Novel Technology of Thermally Induced Stress
,
Proc. of LPM2008
,
Quebec
,
2008
4.
J. M.
Gee
et al:
Emitter Wrap-Through solar Cell
,
Proc. of 23rd IEEE Photovoltaic Specialists Conference
,
Louisville
,
265
270
,
1993
5.
I.
Romijn
et al:
ASPIRE: a new industrial MWT cell technology enabling high efficiencies on thin and large mc-Si wafers
,
Proc. of 22nd European Photovoltaic Solar Energy Conference
,
Milan, Italy
,
1043
1049
,
2007
6.
A.
Schoonderbeek
et al:
Laser technology for cost reduction in silicon solar cell production
,
Proc. of ICALEO, Paper M704
,
2006
7.
B. N.
Chichkov
et al:
Femtosecond, picosecond and nanosecond laser ablation of solids
,
J. of Appl. Phys., A
63
,
109
115
,
1996
8.
J. G.
Wilkes
et al: Silicon Processing, In
Handbook of Semiconductor Technology
(Vol.
2
),
Wiley-VCH
,
2000
9.
A.
Schoonderbeek
et al:
The influence of the pulse length on the drilling of metals with an excimer laser
,
J. of Laser Appl.
, Vol.
16
nr.
2
,
85
91
,
2004
10.
G.E.
Jellison
et al:
Optical constants for silicon at 300 and 10 K determined from 1.64 to 4.73 eV by elipsometry
,
J. of Appl. Phys.
, Vol.
53
nr.
5
,
1982
11.
D.
Bäuerle
: Laser Processing and Chemistry, 3rd Edition.
Heidelberg
:
Springer Verlag
, ISBN 3-540-66891-8,
2000
12.
M. V.
Allmen
et al: Laser-Beam Interactions with Materials, 2nd Edition.
Heidelberg
:
Springer Verlag
, ISBN 3-540-59401-9,
1998
13.
M. D.
Shirk
et al:
A review of ultrashort pulsed laser ablation of materials
,
J. Laser Appl.
, Vol.
10
,
18
28
,
1998
14.
A.
Schoonderbeek
et al:
Laser technology for cost reduction in silicon solar cell production
,
Proc. of 69th Laser Materials Processing Conference
,
85
90
,
2007
15.
F.
Siegel
et al:
Extensive Micro-Structuring of Metals using Picosecond Pulses – Ablation Behavior and Industrial Relevance
,
Proc. of LPM2008
,
Quebec
,
2008
16.
P.
Engelhart
et al:
Laser technology for back-contacted silicon solar cells
,
Proc. of ICALEO, Paper M703
,
2006
17.
D.
Breitling
et al:
Plasma effects during ablation and drilling using pulsed solid-state lasers
,
Proc. of Laser Processing of Advanced Materials and Laser Microtechnologies
, Vol.
5221
,
24
33
,
2003
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