Gallium Nitride (GaN) is an important semiconductor material as GaN based devices have revolutionised the optoelectronics and high power electronics sectors. A great deal of attention has been focused on developing methods to fabricate semiconductor nanostructures with uniform size distributions. We report the formation of Excimer laser induced periodic surface structures. The ablation threshold of GaN with the 193 nm excimer laser was determined empirically. The surface structures were produced using a phase mask with a 668.2 nm periodicity. The features produced on the surface of the GaN were regular and of uniform periodicity, however, a significant amount of debris was generated during the machining of GaN. In order to try and reduce the debris generated further trials were carried out on both process optimisation and also on the use of a variety of assist gases. It is concluded that fluence does not have a significant impact on debris generation and Helium was found to be the most successful assist gas reducing the debris significantly.
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ICALEO 2008: 27th International Congress on Laser Materials Processing, Laser Microprocessing and Nanomanufacturing
October 20–23, 2008
Temecula, California, USA
ISBN:
978-0-912035-12-3
PROCEEDINGS PAPER
Excimer laser induced microstructures on the surface of free standing gallium nitride wafers Available to Purchase
F. Parker;
F. Parker
1
National Centre for Laser Applications (NCLA), National University of Ireland
, Galway, Galway, Ireland
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D. Thomas;
D. Thomas
2
Department of Physics, University of Basel
, Switzerland
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A. Dixit;
A. Dixit
1
National Centre for Laser Applications (NCLA), National University of Ireland
, Galway, Galway, Ireland
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U. Prendergast;
U. Prendergast
1
National Centre for Laser Applications (NCLA), National University of Ireland
, Galway, Galway, Ireland
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A. Conneely;
A. Conneely
1
National Centre for Laser Applications (NCLA), National University of Ireland
, Galway, Galway, Ireland
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G. M. O’Connor;
G. M. O’Connor
1
National Centre for Laser Applications (NCLA), National University of Ireland
, Galway, Galway, Ireland
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D. O’Mahony;
D. O’Mahony
3
Tyndall National Institute
, Cork, Ireland
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B. Corbett
B. Corbett
3
Tyndall National Institute
, Cork, Ireland
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Published Online:
October 01 2008
Citation
F. Parker, D. Thomas, A. Dixit, U. Prendergast, A. Conneely, G. M. O’Connor, D. O’Mahony, B. Corbett; October 20–23, 2008. "Excimer laser induced microstructures on the surface of free standing gallium nitride wafers." Proceedings of the ICALEO 2008: 27th International Congress on Laser Materials Processing, Laser Microprocessing and Nanomanufacturing. ICALEO 2008: 27th International Congress on Laser Materials Processing, Laser Microprocessing and Nanomanufacturing. Temecula, California, USA. (pp. M503). ASME. https://doi.org/10.2351/1.5061383
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