UV laser radiation with picosecond pulse duration was applied for ablation of silicon. Micro-drilling and cutting of silicon wafers were performed by 266-nm radiation. The effect of laser fluence on ablation rate and drilling depth was investigated.
Laser affected layer of a bulk material near cutting wall was investigated. SEM, AES, XPS and SIMS techniques were applied for analysis of a cross-section of the cut. The Ar-ion beam etching was used to make the depth profile of the layer. Elemental composition of subsurface layer and its thickness were estimated.
Investigation was inspired by the promise of application of short pulse lasers for formation of microstructures used in production of sensors and high power pulsed microwave detectors.
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