The development of polycrystalline-silicon-thin-film transistors (poly-Si TFTs) using the laser crystallization method is reviewed. Pulsed laser crystallization has an advantage of rapid crystallization of silicon films at a low processing temperature. Structural and electrical properties of laser crystallized silicon is discussed. Small crystalline grains with high carrier mobility are formed by laser irradiation. However, a high density of defects ∼1018 cm−3 exists at grain boundaries in laser crystallized silicon films. Oxygen plasma and H2O vapor heat treatments effectively reduce the density of defect states. These methods result in poly-Si TFTs with a carrier mobility of 830 cm2/Vs and a threshold voltage of 1.5 V.
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ICALEO 2002: 21st International Congress on Laser Materials Processing and Laser Microfabrication
October 14–17, 2002
Scottsdale, Arizona, USA
ISBN:
978-0-912035-72-7
PROCEEDINGS PAPER
Progress in laser annealing for low-temperature semiconductor processing and its application to advanced electronics and display devices
T. Sameshima
T. Sameshima
Tokyo University of Agriculture and Technology
,
2-24-16 Nakamachi, Koganei, Tokyo 184-8588, Japan
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Published Online:
October 01 2002
Citation
T. Sameshima; October 14–17, 2002. "Progress in laser annealing for low-temperature semiconductor processing and its application to advanced electronics and display devices." Proceedings of the ICALEO 2002: 21st International Congress on Laser Materials Processing and Laser Microfabrication. ICALEO 2002: 21st International Congress on Laser Materials Processing and Laser Microfabrication. Scottsdale, Arizona, USA. (pp. 170626). ASME. https://doi.org/10.2351/1.5066206
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