Since a few years high power diode lasers with a power in the range from a few ten watts up to several kilowatts are entering the industrial materials processing market. The basic element for a high power diode laser is a semiconductor laser bar, which contains several single emitters. This bar must be mounted onto a special microchannel heat sink for sufficient cooling. Combination of several of these basic units, i.e. incoherent coupling of a high number of single low power laser elements by special optical components, is used to scale the power up into the kilowatt range. As a consequence, the beam quality of state-of-the-art high power diode lasers is inferior in comparison with the conventional lasers. Nevertheless, these lasers are extremely attractive for those applications, where moderate beam qualities are acceptable or even advantageous, because of their high efficiency, their low running costs, their small size, their low weight and since they are very easy to use, easy to integrate and last but not least are almost service free.
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ICALEO 2000: Proceedings of the Laser Applications in the Automotive Industry Conference
October 2–5, 2000
Dearborn, Michigan, USA
ISBN:
978-0-912035-62-8
PROCEEDINGS PAPER
High power diodes for direct processing Available to Purchase
Friedrich Bachmann
Friedrich Bachmann
ROFIN-SINAR Laser GmbH Mainz
, Germany
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Published Online:
October 01 2000
Citation
Friedrich Bachmann; October 2–5, 2000. "High power diodes for direct processing." Proceedings of the ICALEO 2000: Proceedings of the Laser Applications in the Automotive Industry Conference. ICALEO 2000: Proceedings of the Laser Materials Processing Conference. Dearborn, Michigan, USA. (pp. pp. E115-E124). ASME. https://doi.org/10.2351/1.5059483
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