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Journal Articles

Influence of buffer thickness on the performance of GaAs field effect transistors prepared by molecular beam epitaxy

S. L. Su, R. E. Thorne, R. Fischer, W. G. Lyons, H. Morkoç
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 961–964 (1982)
https://doi.org/10.1116/1.571874
Published: November 1982
View article titled, Influence of buffer thickness on the performance of GaAs field effect transistors prepared by molecular beam epitaxy
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Journal Articles

Large grain CdTe thin films on Sb–Bi alloy‐coated Ta substrates

Nicola Romeo, Richard H. Bube
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 969–971 (1982)
https://doi.org/10.1116/1.571876
Published: November 1982
View article titled, Large grain CdTe thin films on Sb–Bi alloy‐coated Ta substrates
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Journal Articles

Laser diagnostics of plasma etching: Measurement of Cl+2 in a chlorine discharge

V. M. Donnelly, D. L. Flamm, G. Collins
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 817–823 (1982)
https://doi.org/10.1116/1.571829
Published: September 1982
View article titled, Laser diagnostics of plasma etching: Measurement of Cl<sup>+</sup><sub>2</sub> in a chlorine discharge
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Journal Articles

The fabrication and use of silicon and gallium arsenide ion source extraction grids

J. L. Speidell, J. M. E. Harper, J. J. Cuomo, A. W. Kleinsasser, H. R. Kaufman, A. H. Tuttle
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 824–827 (1982)
https://doi.org/10.1116/1.571830
Published: September 1982
View article titled, The fabrication and use of silicon and gallium arsenide ion source extraction grids
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Journal Articles

An XPS study of sputtered a‐Si,Ge alloys

G. Lucovsky, S. S. Chao, J. E. Tyler, G. De Maggio
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 838–844 (1982)
https://doi.org/10.1116/1.571833
Published: September 1982
View article titled, An XPS study of sputtered <em>a</em>‐Si,Ge alloys
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Journal Articles

Refractory metal contacts to GaAs: Interface chemistry and Schottky‐barrier formation

J. R. Waldrop, S. P. Kowalczyk, R. W. Grant
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 607–610 (1982)
https://doi.org/10.1116/1.571795
Published: July 1982
View article titled, Refractory metal contacts to GaAs: Interface chemistry and Schottky‐barrier formation
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Journal Articles

Light scattering study of electrons confined at Ge/GaAs interfaces

R. Merlin, A. Pinczuk, W. T. Beard, C. E. E. Wood
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 516–518 (1982)
https://doi.org/10.1116/1.571750
Published: July 1982
View article titled, Light scattering study of electrons confined at Ge/GaAs interfaces
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Journal Articles

Initial stages of anodic oxidation of GaAs

W. H. Makky, F. Cabrera, K. M. Geib, C. W. Wilmsen
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 417–421 (1982)
https://doi.org/10.1116/1.571668
Published: July 1982
View article titled, Initial stages of anodic oxidation of GaAs
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Journal Articles

Giant replicate cell approach to the electronic structure calculation of graded interface regions

W. Y. Ching
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 398–401 (1982)
https://doi.org/10.1116/1.571789
Published: July 1982
View article titled, Giant replicate cell approach to the electronic structure calculation of graded interface regions
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Journal Articles

Polar‐on‐nonpolar epitaxy: Sublattice ordering in the nucleation and growth of GaP on Si(211) surfaces

Steven L. Wright, Masanori Inada, Herbert Kroemer
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 534–539 (1982)
https://doi.org/10.1116/1.571755
Published: July 1982
View article titled, Polar‐on‐nonpolar epitaxy: Sublattice ordering in the nucleation and growth of GaP on Si(211) surfaces
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Journal Articles

Structural model of III–V compound semiconductor Schottky barriers

B. W. Lee, D. C. Wang, R. K. Ni, G. Xu, M. Rowe
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 577–584 (1982)
https://doi.org/10.1116/1.571790
Published: July 1982
View article titled, Structural model of III–V compound semiconductor Schottky barriers
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Journal Articles

Similarity in interactions between metal–semiconductor and metal–metal interfaces

Chin‐An Chang
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 639–642 (1982)
https://doi.org/10.1116/1.571804
Published: July 1982
View article titled, Similarity in interactions between metal–semiconductor and metal–metal interfaces
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Journal Articles

Surface processes controlling MBE heterojunction formation: GaAs(100)/Ge interfaces

Robert S. Bauer, J. C. Mikkelsen, Jr.
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 491–497 (1982)
https://doi.org/10.1116/1.571745
Published: July 1982
View article titled, Surface processes controlling MBE heterojunction formation: GaAs(100)/Ge interfaces
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Journal Articles

Orientation dependence of oxygen adsorption on a cylindrical GaAs crystal

W. Ranke, Y. R. Xing, G. D. Shen
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 426–428 (1982)
https://doi.org/10.1116/1.571670
Published: July 1982
View article titled, Orientation dependence of oxygen adsorption on a cylindrical GaAs crystal
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Journal Articles

Surface donors and acceptors on GaAs and InP exposed to oxygen

A. Nedoluha
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 429–433 (1982)
https://doi.org/10.1116/1.571671
Published: July 1982
View article titled, Surface donors and acceptors on GaAs and InP exposed to oxygen
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Journal Articles

Measurement of semiconductor–insulator interface states by constant‐capacitance deep‐level transient spectroscopy

N. M. Johnson
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 303–314 (1982)
https://doi.org/10.1116/1.571768
Published: July 1982
View article titled, Measurement of semiconductor–insulator interface states by constant‐capacitance deep‐level transient spectroscopy
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Journal Articles

High Schottky barriers on and thermally induced processes at the Au– GaAs(110) interface

W. G. Petro, I. A. Babalola, P. Skeath, C. Y. Su, I. Hino, I. Lindau, W. E. Spicer
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 585–589 (1982)
https://doi.org/10.1116/1.571791
Published: July 1982
View article titled, High Schottky barriers on and thermally induced processes at the Au– GaAs(110) interface
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Journal Articles

Interfacial reactions between Au and hydrogenated amorphous Si

C. C. Tsai, R. J. Nemanich, M. J. Thompson
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 632–636 (1982)
https://doi.org/10.1116/1.571802
Published: July 1982
View article titled, Interfacial reactions between Au and hydrogenated amorphous Si
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Journal Articles

On the interface connection rules for effective‐mass wave functions at an abrupt heterojunction between two semiconductors with different effective mass

Herbert Kroemer, Qi‐Gao Zhu
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 551–553 (1982)
https://doi.org/10.1116/1.571759
Published: July 1982
View article titled, On the interface connection rules for effective‐mass wave functions at an abrupt heterojunction between two semiconductors with different effective mass
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Journal Articles

Investigation of GaAs field‐effect transistor interfaces using pulsed electron beam excitation

L. D. Flesner, A. K. Nedoluha, H. H. Wieder
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 463–466 (1982)
https://doi.org/10.1116/1.571679
Published: July 1982
View article titled, Investigation of GaAs field‐effect transistor interfaces using pulsed electron beam excitation
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