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Journal Articles

Schottky barrier modulation at metal contacts to CdS and CdSe

C. F. Brucker, L. J. Brillson, A. D. Katnani, N. G. Stoffel, G. Margaritondo
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 590–593 (1982)
https://doi.org/10.1116/1.571792
Published: July 1982
View articletitled, Schottky barrier modulation at metal contacts to CdS and CdSe
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Journal Articles

Bulk vacancies in CdxHg1−xTe

C. A. Swarts, M. S. Daw, T. C. McGill
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 198–200 (1982)
https://doi.org/10.1116/1.571712
Published: May 1982
View articletitled, Bulk vacancies in CdxHg1−xTe
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Journal Articles

Angle‐resolved photoemission studies of oxide formation on Cu(100)

D. T. Ling, J. N. Miller, P. Pianetta, D. L. Weissman, I. Lindau, W. E. Spicer
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 47–49 (1982)
https://doi.org/10.1116/1.571734
Published: May 1982
View articletitled, Angle‐resolved photoemission studies of oxide formation on Cu(100)
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Journal Articles

Surface modification of the PLT lower hybrid waveguides to improve operations

J. Timberlake, S. A. Cohen, C. Crider, G. Estepp, W. Hooke, D. Manos, J. Stevens, M. Ulrickson
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 1309–1312 (1982)
https://doi.org/10.1116/1.571568
Published: April 1982
View articletitled, Surface modification of the PLT lower hybrid waveguides to improve operations
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Journal Articles

Recent developments in electron and photon stimulated desorption

D. Menzel
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 538–543 (1982)
https://doi.org/10.1116/1.571428
Published: March 1982
View articletitled, Recent developments in electron and photon stimulated desorption
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Journal Articles

Variation in the stoichiometry of thin silicon nitride insulating films on silicon and its correlation with memory traps

R. S. Bailey, V. J. Kapoor
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 484–487 (1982)
https://doi.org/10.1116/1.571341
Published: March 1982
View articletitled, Variation in the stoichiometry of thin silicon nitride insulating films on silicon and its correlation with memory traps
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Journal Articles

The formation of the Schottky barrier at the V/Si interface

J. G. Clabes, G. W. Rubloff, B. Reihl, R. J. Purtell, P. S. Ho, A. Zartner, F. J. Himpsel, D. E. Eastman
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 684–687 (1982)
https://doi.org/10.1116/1.571628
Published: March 1982
View articletitled, The formation of the Schottky barrier at the V/Si interface
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Journal Articles

Observation of positively charged state generation near the Si/SiO2 interface during Fowler–Nordheim tunneling

J. Maserjian, N. Zamani
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 743–746 (1982)
https://doi.org/10.1116/1.571448
Published: March 1982
View articletitled, Observation of positively charged state generation near the Si/SiO2 interface during Fowler–Nordheim tunneling
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Journal Articles

Photoemission studies of surface core‐level shifts and their applications

D. E. Eastman, F. J. Himpsel, J. F. van der Veen
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 609–616 (1982)
https://doi.org/10.1116/1.571405
Published: March 1982
View articletitled, Photoemission studies of surface core‐level shifts and their applications
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Journal Articles

Photoelectric properties of CdS–MgPc heterojunction solar cells

H. J. Wagner, R. O. Loutfy
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 300–304 (1982)
https://doi.org/10.1116/1.571286
Published: March 1982
View articletitled, Photoelectric properties of CdS–MgPc heterojunction solar cells
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Journal Articles

The spectroscopic observation of water formation

G. B. Fisher, J. L. Gland, S. J. Schmieg
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 518–521 (1982)
https://doi.org/10.1116/1.571421
Published: March 1982
View articletitled, The spectroscopic observation of water formation
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Journal Articles

A study of Schottky barrier formation for Ga/Si(111)‐(2×1) and Sb/Si(111)‐(2×1) interfaces

J. L. Freeouf, M. Aono, F. J. Himpsel, D. E. Eastman
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 681–684 (1981)
https://doi.org/10.1116/1.571084
Published: September 1981
View articletitled, A study of Schottky barrier formation for Ga/Si(111)‐(2×1) and Sb/Si(111)‐(2×1) interfaces
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Journal Articles

Silicon–refractory metal interfaces: Evidence of room‐temperature intermixing for Si–Cr

A. Franciosi, D. J. Peterman, J. H. Weaver
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 657–660 (1981)
https://doi.org/10.1116/1.571080
Published: September 1981
View articletitled, Silicon–refractory metal interfaces: Evidence of room‐temperature intermixing for Si–Cr
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Journal Articles

Possible oxygen chemisorption configurations on the Si(lll) 2×1 surface

C. Y. Su, P. R. Skeath, I. Lindau, W. E. Spicer
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 481–486 (1981)
https://doi.org/10.1116/1.571043
Published: September 1981
View articletitled, Possible oxygen chemisorption configurations on the Si(lll) 2×1 surface
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Journal Articles

Critique of tight binding (orbital removal) method: Ideal vacancy and surface states

J. B. Krieger, P. M. Laufer
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 307–312 (1981)
https://doi.org/10.1116/1.571054
Published: September 1981
View articletitled, Critique of tight binding (orbital removal) method: Ideal vacancy and surface states
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Journal Articles

XPS study of interface formation of CVD SiO2 on InSb

R. P. Vasquez, F. J. Grunthaner
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 431–436 (1981)
https://doi.org/10.1116/1.571033
Published: September 1981
View articletitled, XPS study of interface formation of CVD SiO2 on InSb
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Journal Articles

Ideal vacancy induced band gap levels in lattice matched thin superlattices: The GaAs–AlAs(100) and GaSb–InAs(100) systems

S. Das Sarma, A. Madhukar
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 447–452 (1981)
https://doi.org/10.1116/1.571036
Published: September 1981
View articletitled, Ideal vacancy induced band gap levels in lattice matched thin superlattices: The GaAs–AlAs(100) and GaSb–InAs(100) systems
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Journal Articles

Photoemission investigation of Si(111)–Cu interfaces

I. Abbati, M. Grioni
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 631–635 (1981)
https://doi.org/10.1116/1.571076
Published: September 1981
View articletitled, Photoemission investigation of Si(111)–Cu interfaces
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Journal Articles

Reconstructions of GaAs and AlAs surfaces as a function of metal to As ratio

R. Z. Bachrach, R. S. Bauer, P. Chiaradia, G. V. Hansson
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 335–343 (1981)
https://doi.org/10.1116/1.571059
Published: September 1981
View articletitled, Reconstructions of GaAs and AlAs surfaces as a function of metal to As ratio
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Journal Articles

Oxidation of Si(111), 7×7 and 2×1: A comparison

C. Y. Su, P. R. Skeath, I. Lindau, W. E. Spicer
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 18, 843–846 (1981)
https://doi.org/10.1116/1.570974
Published: April 1981
View articletitled, Oxidation of Si(111), 7×7 and 2×1: A comparison
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