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Journal Articles

Chemical bonding at the Si–metal interface: Si–Ni and Si–Cr

A. Franciosi, J. H. Weaver, D. G. O’Neill, Y. Chabal, J. E. Rowe, J. M. Poate, O. Bisi, C. Calandra
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 624–627 (1982)
https://doi.org/10.1116/1.571800
Published: July 1982
View article titled, Chemical bonding at the Si–metal interface: Si–Ni and Si–Cr
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Journal Articles

SAM studies on high‐temperature annealing of vanadium thin films on oxidized silicon wafers

Jiann‐Ruey Chen, Chia‐Pin Sung, Fon‐Shan Yeh, Yuen‐Chung Liu, Chikuang C. Wang
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 804–806 (1982)
https://doi.org/10.1116/1.571489
Published: March 1982
View article titled, SAM studies on high‐temperature annealing of vanadium thin films on oxidized silicon wafers
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Journal Articles

Chemical bonding and charge redistribution: Valence band and core level correlations for the Ni/Si, Pd/Si, and Pt/Si systems

P. J. Grunthaner, F. J. Grunthaner, A. Madhukar
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 680–683 (1982)
https://doi.org/10.1116/1.571627
Published: March 1982
View article titled, Chemical bonding and charge redistribution: Valence band and core level correlations for the Ni/Si, Pd/Si, and Pt/Si systems
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Journal Articles

Improvement of thermally formed nickel silicide by ion irradiation

L. S. Wieluński, C‐D. Lien, B. X. Liu, M‐A. Nicolet
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 182–185 (1982)
https://doi.org/10.1116/1.571353
Published: February 1982
View article titled, Improvement of thermally formed nickel silicide by ion irradiation
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Journal Articles

Metal/silicon interface formation: The Ni/Si and Pd/Si systems

P. J. Grunthaner, F. J. Grunthaner, A. Madhukar, J. W. Mayer
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 649–656 (1981)
https://doi.org/10.1116/1.571079
Published: September 1981
View article titled, Metal/silicon interface formation: The Ni/Si and Pd/Si systems
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Journal Articles

Interference enhanced Raman scattering study of the interfacial reaction of Pd on a‐Si:H

R. J. Nemanich, C. C. Tsai, M. J. Thompson, T. W. Sigmon
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 685–688 (1981)
https://doi.org/10.1116/1.571085
Published: September 1981
View article titled, Interference enhanced Raman scattering study of the interfacial reaction of Pd on a‐Si:H
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Journal Articles

Diffusion barriers in layered contact structures

M‐A. Nicolet, M. Bartur
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 786–793 (1981)
https://doi.org/10.1116/1.571149
Published: September 1981
View article titled, Diffusion barriers in layered contact structures
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Journal Articles

Refractory metal silicides for VLSI applications

A. K. Sinha
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 778–785 (1981)
https://doi.org/10.1116/1.571148
Published: September 1981
View article titled, Refractory metal silicides for VLSI applications
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Journal Articles

Shallow and parallel silicide contacts

K. N. Tu
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 766–777 (1981)
https://doi.org/10.1116/1.571147
Published: September 1981
View article titled, Shallow and parallel silicide contacts
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Journal Articles

Exploiting energy‐dependent photoemission in Si d‐metal interfaces: The Si(111)–Pd case

I. Abbati, G. Rossi, I. Lindau, W. E. Spicer
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 636–640 (1981)
https://doi.org/10.1116/1.571077
Published: September 1981
View article titled, Exploiting energy‐dependent photoemission in Si <em>d</em>‐metal interfaces: The Si(111)–Pd case
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Journal Articles

Structure study of Au–Si interface by MeV ion scattering

T. Narusawa, K. Kinoshita, W. M. Gibson, A. Hiraki
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 18, 872–875 (1981)
https://doi.org/10.1116/1.570981
Published: April 1981
View article titled, Structure study of Au–Si interface by MeV ion scattering
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Journal Articles

Electronic states and atomic structure at the Pd2Si–Si interface

P. E. Schmid, P. S. Ho, H. Föll, G. W. Rubloff
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 18, 937–943 (1981)
https://doi.org/10.1116/1.570960
Published: April 1981
View article titled, Electronic states and atomic structure at the Pd<sub>2</sub>Si–Si interface
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Journal Articles

Summary Abstract: Silicon MBE

J. C. Bean
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 18, 769–771 (1981)
https://doi.org/10.1116/1.570944
Published: April 1981
View article titled, Summary Abstract: Silicon MBE
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Journal Articles

Interface metallurgy and electronic properties of silicides

G. Ottaviani
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 18, 924–928 (1981)
https://doi.org/10.1116/1.570995
Published: April 1981
View article titled, Interface metallurgy and electronic properties of silicides
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Journal Articles

Silicide interface stoichiometry

J. L. Freeouf
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 18, 910–916 (1981)
https://doi.org/10.1116/1.570993
Published: April 1981
View article titled, Silicide interface stoichiometry
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Journal Articles

Systematics on the electron states of silicon d‐metal interfaces

L. Braicovich, I. Abbati, J. N. Miller, I. Lindau, S. Schwarz, P. R. Skeath, C. Y. Su, W. E. Spicer
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 17, 1005–1008 (1980)
https://doi.org/10.1116/1.570581
Published: September 1980
View article titled, Systematics on the electron states of silicon <em>d</em>‐metal interfaces
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Journal Articles

Refractory silicides for integrated circuits

S. P. Murarka
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 17, 775–792 (1980)
https://doi.org/10.1116/1.570560
Published: July 1980
View article titled, Refractory silicides for integrated circuits
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Journal Articles

Effect of impurities on the PtSi–Si interface and the PtSi surface

C. A. Crider, J. M. Poate, J. E. Rowe, T. T. Sheng, S. D. Ferris
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 17, 433–436 (1980)
https://doi.org/10.1116/1.570475
Published: January 1980
View article titled, Effect of impurities on the PtSi–Si interface and the PtSi surface
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Journal Articles

Observations of stresses in thin films of palladium and platinum silicides on silicon

J. Angilello, F. d’Heurle, S. Petersson, A. Segmüller
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 17, 471–475 (1980)
https://doi.org/10.1116/1.570486
Published: January 1980
View article titled, Observations of stresses in thin films of palladium and platinum silicides on silicon
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Journal Articles

Interface modification of refractory metal–silicon structures by ion implantation

K. L. Wang, F. Bacon, R. F. Reihl
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 16, 1909–1912 (1979)
https://doi.org/10.1116/1.570326
Published: November 1979
View article titled, Interface modification of refractory metal–silicon structures by ion implantation
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