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Journal Articles

Formation, growth, and stability of the CdS/CuInSe2 interface

L. L. Kazmerski, O. Jamjoum, P. J. Ireland, R. A. Mickelsen, W. S. Chen
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 486–490 (1982)
https://doi.org/10.1116/1.571744
Published: July 1982
View article titled, Formation, growth, and stability of the CdS/CuInSe<sub>2</sub> interface
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Journal Articles

Measurement of ZnSe–GaAs(110) and ZnSe–Ge(110) heterojunction band discontinuities by x‐ray photoelectron spectroscopy (XPS)

Steven P. Kowalczyk, E. A. Kraut, J. R. Waldrop, R. W. Grant
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 482–485 (1982)
https://doi.org/10.1116/1.571684
Published: July 1982
View article titled, Measurement of ZnSe–GaAs(110) and ZnSe–Ge(110) heterojunction band discontinuities by x‐ray photoelectron spectroscopy (XPS)
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Journal Articles

Composition and electron stress effects in silicon nitride thin films made by thermal growth and chemical etching of LPCVD MNOS structures as studied by x‐ray photoelectron spectroscopy (XPS)

J. A. Wurzbach, F. J. Grunthaner, J. Maserjian
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 962–965 (1982)
https://doi.org/10.1116/1.571653
Published: April 1982
View article titled, Composition and electron stress effects in silicon nitride thin films made by thermal growth and chemical etching of LPCVD MNOS structures as studied by x‐ray photoelectron spectroscopy (XPS)
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Journal Articles

Interface structure of epitaxial Ge–Si(111) system studied by high energy ion scattering

T. Narusawa, W. M. Gibson
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 709–712 (1982)
https://doi.org/10.1116/1.571636
Published: March 1982
View article titled, Interface structure of epitaxial Ge–Si(111) system studied by high energy ion scattering
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Journal Articles

CdS–Cu interface formation: A microscopic study of the interdiffusion and chemical processes

N. G. Stoffel, R. R. Daniels, G. Margaritondo, C. F. Brucker, L. J. Brillson
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 701–704 (1982)
https://doi.org/10.1116/1.571634
Published: March 1982
View article titled, CdS–Cu interface formation: A microscopic study of the interdiffusion and chemical processes
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Journal Articles

Technology challenges for ultrasmall silicon MOSFET’s

R. H. Dennard
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 537–539 (1981)
https://doi.org/10.1116/1.571121
Published: September 1981
View article titled, Technology challenges for ultrasmall silicon MOSFET’s
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Journal Articles

Interference enhanced Raman scattering study of the interfacial reaction of Pd on a‐Si:H

R. J. Nemanich, C. C. Tsai, M. J. Thompson, T. W. Sigmon
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 685–688 (1981)
https://doi.org/10.1116/1.571085
Published: September 1981
View article titled, Interference enhanced Raman scattering study of the interfacial reaction of Pd on a‐Si:H
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Journal Articles

MBE‐grown fluoride films: A new class of epitaxial dielectrics

R. F. C. Farrow, P. W. Sullivan, G. M. Williams, G. R. Jones, D. C. Cameron
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 415–420 (1981)
https://doi.org/10.1116/1.571030
Published: September 1981
View article titled, MBE‐grown fluoride films: A new class of epitaxial dielectrics
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Journal Articles

Structure study of Au–Si interface by MeV ion scattering

T. Narusawa, K. Kinoshita, W. M. Gibson, A. Hiraki
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 18, 872–875 (1981)
https://doi.org/10.1116/1.570981
Published: April 1981
View article titled, Structure study of Au–Si interface by MeV ion scattering
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Journal Articles

Studies of surface, thin film and interface properties by automatic spectroscopic ellipsometry

D. E. Aspnes
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 18, 289–295 (1981)
https://doi.org/10.1116/1.570744
Published: March 1981
View article titled, Studies of surface, thin film and interface properties by automatic spectroscopic ellipsometry
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Journal Articles

Surface and interface properties of Zn3P2 solar cells

L. L. Kazmerski, P. J. Ireland, A. Catalano
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 18, 368–371 (1981)
https://doi.org/10.1116/1.570787
Published: March 1981
View article titled, Surface and interface properties of Zn<sub>3</sub>P<sub>2</sub> solar cells
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Journal Articles

Oxide and interface properties of anodic films on Hg1−xCdxTe

T. S. Sun, S. P. Buchner, N. E. Byer
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 17, 1067–1073 (1980)
https://doi.org/10.1116/1.570592
Published: September 1980
View article titled, Oxide and interface properties of anodic films on Hg<sub>1−<em>x</em></sub>Cd<sub><em>x</em></sub>Te
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Journal Articles

Effects of H2S adsorption on surface properties of GaAs {100} grown in situ by MBE

J. Massies, F. Dézaly, N. T. Linh
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 17, 1134–1140 (1980)
https://doi.org/10.1116/1.570630
Published: September 1980
View article titled, Effects of H<sub>2</sub>S adsorption on surface properties of GaAs {100} grown <em>i</em><em>n</em> <em>s</em><em>i</em><em>t</em><em>u</em> by MBE
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Journal Articles

Problems and prospects of compound semiconductor field‐effect transistors

H. H. Wieder
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 17, 1009–1018 (1980)
https://doi.org/10.1116/1.570582
Published: September 1980
View article titled, Problems and prospects of compound semiconductor field‐effect transistors
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Journal Articles

Scattering of inversion layer electrons by oxide polar mode generated interface phonons

B. T. Moore, D. K. Ferry
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 17, 1037–1040 (1980)
https://doi.org/10.1116/1.570586
Published: September 1980
View article titled, Scattering of inversion layer electrons by oxide polar mode generated interface phonons
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Journal Articles

Reactive sputter etching and reactive ion milling—selectivity, dimensional control, and reduction of MOS–interface degradation

B. Meusemann
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 16, 1886–1888 (1979)
https://doi.org/10.1116/1.570320
Published: November 1979
View article titled, Reactive sputter etching and reactive ion milling—selectivity, dimensional control, and reduction of MOS–interface degradation
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Journal Articles

Ideal CdTe/HgTe superlattices

J. N. Schulman, T. C. McGill
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 16, 1513–1516 (1979)
https://doi.org/10.1116/1.570237
Published: September 1979
View article titled, Ideal CdTe/HgTe superlattices
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Journal Articles

GaAs/Ta2O5 and GaAs/Al2O3 interface structures

H. Nishi, A. G. Revesz
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 16, 1487–1491 (1979)
https://doi.org/10.1116/1.570228
Published: September 1979
View article titled, GaAs/Ta<sub>2</sub>O<sub>5</sub> and GaAs/Al<sub>2</sub>O<sub>3</sub> interface structures
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Journal Articles

MBE‐grown insulating oxide films on GaAs

K. Ploog, A. Fischer, R. Trommer, M. Hirose
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 16, 290–294 (1979)
https://doi.org/10.1116/1.569929
Published: March 1979
View article titled, MBE‐grown insulating oxide films on GaAs
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Journal Articles

Transmission electron microscopy of interfaces in III–V compound semiconductors

P. M. Petroff
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 14, 973–978 (1977)
https://doi.org/10.1116/1.569406
Published: July 1977
View article titled, Transmission electron microscopy of interfaces in III–V compound semiconductors
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