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Journal Articles

Effect of glow discharge treatment of substrates on parylene‐substrate adhesion

Ashok K. Sharma, H. Yasuda
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 994–998 (1982)
https://doi.org/10.1116/1.571880
Published: November 1982
View article titled, Effect of glow discharge treatment of substrates on parylene‐substrate adhesion
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Journal Articles

A study of the sputtering of copper–nickel using a combination of techniques

Michael P. Thomas, Brian Ralph
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 986–993 (1982)
https://doi.org/10.1116/1.571879
Published: November 1982
View article titled, A study of the sputtering of copper–nickel using a combination of techniques
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Journal Articles

Laser‐enhanced gas–surface chemistry: Basic processes and applications

T. J. Chuang
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 798–806 (1982)
https://doi.org/10.1116/1.571827
Published: September 1982
View article titled, Laser‐enhanced gas–surface chemistry: Basic processes and applications
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Journal Articles

Simulation of plasma‐assisted etching processes by ion‐beam techniques

T. M. Mayer, R. A. Barker
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 757–763 (1982)
https://doi.org/10.1116/1.571821
Published: September 1982
View article titled, Simulation of plasma‐assisted etching processes by ion‐beam techniques
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Journal Articles

Plasma beam studies of Si and Al etching mechanisms

Donald L. Smith, Paul G. Saviano
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 768–773 (1982)
https://doi.org/10.1116/1.571823
Published: September 1982
View article titled, Plasma beam studies of Si and Al etching mechanisms
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Journal Articles

First‐principles determination of the structure of the Al/GaAs(110) surface

J. Ihm, J. D. Joannopoulos
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 340–343 (1982)
https://doi.org/10.1116/1.571777
Published: July 1982
View article titled, First‐principles determination of the structure of the Al/GaAs(110) surface
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Journal Articles

Physics and chemistry of semiconductor interfaces: Some future directions

Frank Herman
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 643–646 (1982)
https://doi.org/10.1116/1.571805
Published: July 1982
View article titled, Physics and chemistry of semiconductor interfaces: Some future directions
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Journal Articles

Laser‐induced order–disorder transition of the (100)InP surface

J. M. Moison, M. Bensoussan
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 315–318 (1982)
https://doi.org/10.1116/1.571769
Published: July 1982
View article titled, Laser‐induced order–disorder transition of the (100)InP surface
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Journal Articles

Crystallographic relationships and interfacial properties of Ag on GaAs(100) surfaces

R. Ludeke, T.‐C. Chiang, D. E. Eastman
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 599–606 (1982)
https://doi.org/10.1116/1.571794
Published: July 1982
View article titled, Crystallographic relationships and interfacial properties of Ag on GaAs(100) surfaces
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Journal Articles

Localized and delocalized charge transfer during adsorption on semiconductors: Experiments and cluster calculations on the prototype surface ZnO(101̄0)

W. Göpel, G. Rocker
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 389–397 (1982)
https://doi.org/10.1116/1.571788
Published: July 1982
View article titled, Localized and delocalized charge transfer during adsorption on semiconductors: Experiments and cluster calculations on the prototype surface ZnO(101̄0)
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Journal Articles

Vacancies and hydrogen adsorption at GaAs(110): Theoretical model studies of the electronic structure

J. Beyer, P. Krüger, A. Mazur, J. Pollmann, M. Schmeits
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 358–363 (1982)
https://doi.org/10.1116/1.571780
Published: July 1982
View article titled, Vacancies and hydrogen adsorption at GaAs(110): Theoretical model studies of the electronic structure
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Journal Articles

The electronic structure of Ge:GaAs(110) interfaces

W. Mönch, Robert S. Bauer, H. Gant, R. Murschall
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 498–506 (1982)
https://doi.org/10.1116/1.571746
Published: July 1982
View article titled, The electronic structure of Ge:GaAs(110) interfaces
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Journal Articles

Effect of low‐intensity laser radiation during oxidation of the GaAs(110) surface

W. G. Petro, I. Hino, S. Eglash, I. Lindau, C. Y. Su, W. E. Spicer
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 405–408 (1982)
https://doi.org/10.1116/1.571665
Published: July 1982
View article titled, Effect of low‐intensity laser radiation during oxidation of the GaAs(110) surface
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Journal Articles

Photoemission and photon‐stimulated ion desorption studies of diamond(111): Hydrogen

B. B. Pate, M. H. Hecht, C. Binns, I. Lindau, W. E. Spicer
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 364–367 (1982)
https://doi.org/10.1116/1.571781
Published: July 1982
View article titled, Photoemission and photon‐stimulated ion desorption studies of diamond(111): Hydrogen
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Journal Articles

Formation, growth, and stability of the CdS/CuInSe2 interface

L. L. Kazmerski, O. Jamjoum, P. J. Ireland, R. A. Mickelsen, W. S. Chen
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 486–490 (1982)
https://doi.org/10.1116/1.571744
Published: July 1982
View article titled, Formation, growth, and stability of the CdS/CuInSe<sub>2</sub> interface
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Journal Articles

Theoretical investigation of hydrogen chemisorption on Ga‐containing III–V compounds

F. Manghi, C. M. Bertoni, C. Calandra, E. Molinari
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 371–374 (1982)
https://doi.org/10.1116/1.571783
Published: July 1982
View article titled, Theoretical investigation of hydrogen chemisorption on Ga‐containing III–V compounds
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Journal Articles

Structural studies of Schottky barrier formation by means of surface EXAFS: Pd and Ag on Si(111) 7×7

J. Stöhr, R. Jaeger
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 619–623 (1982)
https://doi.org/10.1116/1.571799
Published: July 1982
View article titled, Structural studies of Schottky barrier formation by means of surface EXAFS: Pd and Ag on Si(111) 7×7
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Journal Articles

Measurement of ZnSe–GaAs(110) and ZnSe–Ge(110) heterojunction band discontinuities by x‐ray photoelectron spectroscopy (XPS)

Steven P. Kowalczyk, E. A. Kraut, J. R. Waldrop, R. W. Grant
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 482–485 (1982)
https://doi.org/10.1116/1.571684
Published: July 1982
View article titled, Measurement of ZnSe–GaAs(110) and ZnSe–Ge(110) heterojunction band discontinuities by x‐ray photoelectron spectroscopy (XPS)
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Journal Articles

Observation of Ge‐induced electronic states at the Ge:GaAs(110) interface by means of polarization‐dependent UPS

P. Zurcher, G. J. Lapeyre, J. Anderson, D. Frankel
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 476–481 (1982)
https://doi.org/10.1116/1.571683
Published: July 1982
View article titled, Observation of Ge‐induced electronic states at the Ge:GaAs(110) interface by means of polarization‐dependent UPS
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Journal Articles

Photodeposition of metal films with ultraviolet laser light

D. J. Ehrlich, R. M. Osgood, Jr., T. F. Deutsch
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 23–32 (1982)
https://doi.org/10.1116/1.571724
Published: May 1982
View article titled, Photodeposition of metal films with ultraviolet laser light
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