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Journal Articles

Crystallographic relationships and interfacial properties of Ag on GaAs(100) surfaces

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R. Ludeke, T.‐C. Chiang, D. E. Eastman
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 599–606 (1982)
https://doi.org/10.1116/1.571794
Published: July 1982
View articletitled, Crystallographic relationships and interfacial properties of Ag on GaAs(100) surfaces
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Journal Articles

Formation, growth, and stability of the CdS/CuInSe2 interface

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L. L. Kazmerski, O. Jamjoum, P. J. Ireland, R. A. Mickelsen, W. S. Chen
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 486–490 (1982)
https://doi.org/10.1116/1.571744
Published: July 1982
View articletitled, Formation, growth, and stability of the CdS/CuInSe2 interface
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Journal Articles

Measurement of ZnSe–GaAs(110) and ZnSe–Ge(110) heterojunction band discontinuities by x‐ray photoelectron spectroscopy (XPS)

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Steven P. Kowalczyk, E. A. Kraut, J. R. Waldrop, R. W. Grant
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 482–485 (1982)
https://doi.org/10.1116/1.571684
Published: July 1982
View articletitled, Measurement of ZnSe–GaAs(110) and ZnSe–Ge(110) heterojunction band discontinuities by x‐ray photoelectron spectroscopy (XPS)
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Journal Articles

Composition and electron stress effects in silicon nitride thin films made by thermal growth and chemical etching of LPCVD MNOS structures as studied by x‐ray photoelectron spectroscopy (XPS)

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J. A. Wurzbach, F. J. Grunthaner, J. Maserjian
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 962–965 (1982)
https://doi.org/10.1116/1.571653
Published: April 1982
View articletitled, Composition and electron stress effects in silicon nitride thin films made by thermal growth and chemical etching of LPCVD MNOS structures as studied by x‐ray photoelectron spectroscopy (XPS)
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Journal Articles

Interface structure of epitaxial Ge–Si(111) system studied by high energy ion scattering

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T. Narusawa, W. M. Gibson
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 709–712 (1982)
https://doi.org/10.1116/1.571636
Published: March 1982
View articletitled, Interface structure of epitaxial Ge–Si(111) system studied by high energy ion scattering
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Journal Articles

CdS–Cu interface formation: A microscopic study of the interdiffusion and chemical processes

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N. G. Stoffel, R. R. Daniels, G. Margaritondo, C. F. Brucker, L. J. Brillson
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 701–704 (1982)
https://doi.org/10.1116/1.571634
Published: March 1982
View articletitled, CdS–Cu interface formation: A microscopic study of the interdiffusion and chemical processes
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Journal Articles

Electrical properties of SiO2 and Si3N4 dielectric layers on InP

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L. G. Meiners
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 373–379 (1981)
https://doi.org/10.1116/1.571066
Published: September 1981
View articletitled, Electrical properties of SiO2 and Si3N4 dielectric layers on InP
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Journal Articles

Technology challenges for ultrasmall silicon MOSFET’s

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R. H. Dennard
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 537–539 (1981)
https://doi.org/10.1116/1.571121
Published: September 1981
View articletitled, Technology challenges for ultrasmall silicon MOSFET’s
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Journal Articles

Interference enhanced Raman scattering study of the interfacial reaction of Pd on a‐Si:H

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R. J. Nemanich, C. C. Tsai, M. J. Thompson, T. W. Sigmon
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 685–688 (1981)
https://doi.org/10.1116/1.571085
Published: September 1981
View articletitled, Interference enhanced Raman scattering study of the interfacial reaction of Pd on a‐Si:H
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Journal Articles

MBE‐grown fluoride films: A new class of epitaxial dielectrics

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R. F. C. Farrow, P. W. Sullivan, G. M. Williams, G. R. Jones, D. C. Cameron
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 415–420 (1981)
https://doi.org/10.1116/1.571030
Published: September 1981
View articletitled, MBE‐grown fluoride films: A new class of epitaxial dielectrics
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Journal Articles

Materials options for field‐effect transistors

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H. H. Wieder
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 18, 827–837 (1981)
https://doi.org/10.1116/1.570957
Published: April 1981
View articletitled, Materials options for field‐effect transistors
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Journal Articles

Structure study of Au–Si interface by MeV ion scattering

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T. Narusawa, K. Kinoshita, W. M. Gibson, A. Hiraki
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 18, 872–875 (1981)
https://doi.org/10.1116/1.570981
Published: April 1981
View articletitled, Structure study of Au–Si interface by MeV ion scattering
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Journal Articles

Studies of surface, thin film and interface properties by automatic spectroscopic ellipsometry

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D. E. Aspnes
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 18, 289–295 (1981)
https://doi.org/10.1116/1.570744
Published: March 1981
View articletitled, Studies of surface, thin film and interface properties by automatic spectroscopic ellipsometry
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Journal Articles

Surface and interface properties of Zn3P2 solar cells

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L. L. Kazmerski, P. J. Ireland, A. Catalano
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 18, 368–371 (1981)
https://doi.org/10.1116/1.570787
Published: March 1981
View articletitled, Surface and interface properties of Zn3P2 solar cells
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Journal Articles

Metal contacts to clean and oxidized cadmium telluride and indium phosphide surfaces

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T. P. Humphreys, M. H. Patterson, R. H. Williams
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 17, 886–890 (1980)
https://doi.org/10.1116/1.570610
Published: September 1980
View articletitled, Metal contacts to clean and oxidized cadmium telluride and indium phosphide surfaces
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Journal Articles

Oxide and interface properties of anodic films on Hg1−xCdxTe

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T. S. Sun, S. P. Buchner, N. E. Byer
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 17, 1067–1073 (1980)
https://doi.org/10.1116/1.570592
Published: September 1980
View articletitled, Oxide and interface properties of anodic films on Hg1−xCdxTe
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Journal Articles

Effects of H2S adsorption on surface properties of GaAs {100} grown in situ by MBE

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J. Massies, F. Dézaly, N. T. Linh
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 17, 1134–1140 (1980)
https://doi.org/10.1116/1.570630
Published: September 1980
View articletitled, Effects of H2S adsorption on surface properties of GaAs {100} grown in situ by MBE
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Journal Articles

Problems and prospects of compound semiconductor field‐effect transistors

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H. H. Wieder
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 17, 1009–1018 (1980)
https://doi.org/10.1116/1.570582
Published: September 1980
View articletitled, Problems and prospects of compound semiconductor field‐effect transistors
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Journal Articles

Scattering of inversion layer electrons by oxide polar mode generated interface phonons

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B. T. Moore, D. K. Ferry
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 17, 1037–1040 (1980)
https://doi.org/10.1116/1.570586
Published: September 1980
View articletitled, Scattering of inversion layer electrons by oxide polar mode generated interface phonons
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Journal Articles

Reactive sputter etching and reactive ion milling—selectivity, dimensional control, and reduction of MOS–interface degradation

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B. Meusemann
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 16, 1886–1888 (1979)
https://doi.org/10.1116/1.570320
Published: November 1979
View articletitled, Reactive sputter etching and reactive ion milling—selectivity, dimensional control, and reduction of MOS–interface degradation
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