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Journal Articles

Effect of glow discharge treatment of substrates on parylene‐substrate adhesion

Ashok K. Sharma, H. Yasuda
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 994–998 (1982)
https://doi.org/10.1116/1.571880
Published: November 1982
View articletitled, Effect of glow discharge treatment of substrates on parylene‐substrate adhesion
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Journal Articles

Auger and photoelectron line energy relationships in aluminum–oxygen and silicon–oxygen compounds

C. D. Wagner, D. E. Passoja, H. F. Hillery, T. G. Kinisky, H. A. Six, W. T. Jansen, J. A. Taylor
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 933–944 (1982)
https://doi.org/10.1116/1.571870
Published: November 1982
View articletitled, Auger and photoelectron line energy relationships in aluminum–oxygen and silicon–oxygen compounds
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Journal Articles

Thermal removal of surface carbon from GaAs substrate used in molecular beam epitaxy

Chin‐An Chang
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 663–665 (1982)
https://doi.org/10.1116/1.571809
Published: July 1982
View articletitled, Thermal removal of surface carbon from GaAs substrate used in molecular beam epitaxy
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Journal Articles

Structural model of III–V compound semiconductor Schottky barriers

B. W. Lee, D. C. Wang, R. K. Ni, G. Xu, M. Rowe
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 577–584 (1982)
https://doi.org/10.1116/1.571790
Published: July 1982
View articletitled, Structural model of III–V compound semiconductor Schottky barriers
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Journal Articles

Formation, growth, and stability of the CdS/CuInSe2 interface

L. L. Kazmerski, O. Jamjoum, P. J. Ireland, R. A. Mickelsen, W. S. Chen
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 486–490 (1982)
https://doi.org/10.1116/1.571744
Published: July 1982
View articletitled, Formation, growth, and stability of the CdS/CuInSe2 interface
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Journal Articles

Growth of lead‐germanium‐telluride thin film structures by molecular beam epitaxy

D. L. Partin
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 1–5 (1982)
https://doi.org/10.1116/1.571714
Published: May 1982
View articletitled, Growth of lead‐germanium‐telluride thin film structures by molecular beam epitaxy
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Journal Articles

The ’’cover up’’ of particles by substrate material during ion beam sputtering

J. L. Hock, D. Snider, R. Ford, D. Lichtman
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 56–60 (1982)
https://doi.org/10.1116/1.571736
Published: May 1982
View articletitled, The ’’cover up’’ of particles by substrate material during ion beam sputtering
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Journal Articles

AES sputter profiles of anodic oxide films on (Hg,Cd)Te

P. Morgen, J. A. Silberman, I. Lindau, W. E. Spicer, J. A. Wilson
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 161–163 (1982)
https://doi.org/10.1116/1.571703
Published: May 1982
View articletitled, AES sputter profiles of anodic oxide films on (Hg,Cd)Te
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Journal Articles

Auger and x‐ray characterization of surface nitride films on Ti, Zr, and Hf

P. T. Dawson, S. A. J. Stazyk
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 36–41 (1982)
https://doi.org/10.1116/1.571732
Published: May 1982
View articletitled, Auger and x‐ray characterization of surface nitride films on Ti, Zr, and Hf
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Journal Articles

An Auger electron spectroscopy (AES) study of the initial stages of oxidation of the single crystal Be (0001) surface

D. E. Fowler, J. M. Blakely
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 930–933 (1982)
https://doi.org/10.1116/1.571645
Published: April 1982
View articletitled, An Auger electron spectroscopy (AES) study of the initial stages of oxidation of the single crystal Be (0001) surface
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Journal Articles

A 26‐cm electron‐cyclotron‐resonance ion source for reactive ion beam etching of SiO2 and Si

M. Miyamura, O. Tsukakoshi, S. Komiya
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 986–988 (1982)
https://doi.org/10.1116/1.571659
Published: April 1982
View articletitled, A 26‐cm electron‐cyclotron‐resonance ion source for reactive ion beam etching of SiO2 and Si
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Journal Articles

The preparation and characterization of transition metal nitride films

P. T. Dawson, S. A. J. Stazyk
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 966–967 (1982)
https://doi.org/10.1116/1.571654
Published: April 1982
View articletitled, The preparation and characterization of transition metal nitride films
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Journal Articles

Comparison of AES and XPS analysis of thin passive films

D. R. Baer, D. A. Petersen, L. R. Pederson, M. T. Thomas
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 957–961 (1982)
https://doi.org/10.1116/1.571652
Published: April 1982
View articletitled, Comparison of AES and XPS analysis of thin passive films
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Journal Articles

Quantitative Auger microanalysis of the silicon–oxygen–nitrogen system

A. van Oostrom, L. Augustus, F. H. P. M. Habraken, A. E. T. Kuiper
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 953–956 (1982)
https://doi.org/10.1116/1.571651
Published: April 1982
View articletitled, Quantitative Auger microanalysis of the silicon–oxygen–nitrogen system
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Journal Articles

Laboratory study of the PDX/PLT laser blow‐off trace element injectors

D. Manos, D. Ruzic, R. Moore, S. Cohen
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 1230–1233 (1982)
https://doi.org/10.1116/1.571549
Published: April 1982
View articletitled, Laboratory study of the PDX/PLT laser blow‐off trace element injectors
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Journal Articles

Artifacts observed during Auger profiling of Ta, Ti, and W metals, nitrides and oxynitrides

S. Ingrey, M. B. Johnson, R. W. Streater, G. I. Sproule
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 968–970 (1982)
https://doi.org/10.1116/1.571655
Published: April 1982
View articletitled, Artifacts observed during Auger profiling of Ta, Ti, and W metals, nitrides and oxynitrides
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Journal Articles

AES and SEM studies of oxide and sulfide scales formed on sputter‐deposited 304 stainless steel at 800 and 950 °C

D. R. Baer, J. T. Prater
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 1396–1399 (1982)
https://doi.org/10.1116/1.571638
Published: April 1982
View articletitled, AES and SEM studies of oxide and sulfide scales formed on sputter‐deposited 304 stainless steel at 800 and 950 °C
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Journal Articles

A review of surface spectroscopies for semiconductor characterization

C. R. Helms
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 948–952 (1982)
https://doi.org/10.1116/1.571650
Published: April 1982
View articletitled, A review of surface spectroscopies for semiconductor characterization
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Journal Articles

AES investigation of diffusion formed brass coatings

D. A. Stout, R. J. Rife
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 1400–1402 (1982)
https://doi.org/10.1116/1.571639
Published: April 1982
View articletitled, AES investigation of diffusion formed brass coatings
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Journal Articles

Understanding core–valence–valence Auger line shapes

Dwight R. Jennison
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 548–554 (1982)
https://doi.org/10.1116/1.571430
Published: March 1982
View articletitled, Understanding core–valence–valence Auger line shapes
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