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Journal Articles

Si incorporation in AlxGa1−xAs grown by molecular beam epitaxy

T. J. Drummond, W. G. Lyons, R. Fischer, R. E. Thorne, H. Morkoç, C. G. Hopkins, C. A. Evans, Jr.
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 957–960 (1982)
https://doi.org/10.1116/1.571873
Published: November 1982
View article titled, Si incorporation in Al<sub><em>x</em></sub>Ga<sub>1−<em>x</em></sub>As grown by molecular beam epitaxy
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Journal Articles

A study of the sputtering of copper–nickel using a combination of techniques

Michael P. Thomas, Brian Ralph
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 986–993 (1982)
https://doi.org/10.1116/1.571879
Published: November 1982
View article titled, A study of the sputtering of copper–nickel using a combination of techniques
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Journal Articles

Plasma analysis based on newly found similarities in the relative populations of excited states produced by sputtering and by electron impact

Roger Kelly, S. A. Shivashankar, J. J. Cuomo
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 774–777 (1982)
https://doi.org/10.1116/1.571824
Published: September 1982
View article titled, Plasma analysis based on newly found similarities in the relative populations of excited states produced by sputtering and by electron impact
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Journal Articles

Study of grain boundary diffusion of potassium in gold films using a clean, controlled, and localized source of alkali atoms

M. H. Farías, J. L. Peña, F. Sánchez‐Sinencio
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 853–857 (1982)
https://doi.org/10.1116/1.571835
Published: September 1982
View article titled, Study of grain boundary diffusion of potassium in gold films using a clean, controlled, and localized source of alkali atoms
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Journal Articles

Plasma beam studies of Si and Al etching mechanisms

Donald L. Smith, Paul G. Saviano
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 768–773 (1982)
https://doi.org/10.1116/1.571823
Published: September 1982
View article titled, Plasma beam studies of Si and Al etching mechanisms
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Journal Articles

Effects of implantation and annealing temperatures on implantation induced damage in HgCdTe

S. Y. Wu, W. J. Choyke, W. J. Takei, A. J. Noreika, M. H. Francombe, R. B. Irwin
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 255–258 (1982)
https://doi.org/10.1116/1.571729
Published: May 1982
View article titled, Effects of implantation and annealing temperatures on implantation induced damage in HgCdTe
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Journal Articles

A review of surface spectroscopies for semiconductor characterization

C. R. Helms
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 948–952 (1982)
https://doi.org/10.1116/1.571650
Published: April 1982
View article titled, A review of surface spectroscopies for semiconductor characterization
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Journal Articles

Fragment ion pattern coefficients of quadrupole mass spectrometers

Bing‐Sen Hu, Rong‐Zong Wang, Shi‐Xiang Zhou
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 1031–1033 (1982)
https://doi.org/10.1116/1.571535
Published: April 1982
View article titled, Fragment ion pattern coefficients of quadrupole mass spectrometers
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Journal Articles

Technology and applications of pumping fluids

L. Laurenson
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 989–995 (1982)
https://doi.org/10.1116/1.571660
Published: April 1982
View article titled, Technology and applications of pumping fluids
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Journal Articles

A 26‐cm electron‐cyclotron‐resonance ion source for reactive ion beam etching of SiO2 and Si

M. Miyamura, O. Tsukakoshi, S. Komiya
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 986–988 (1982)
https://doi.org/10.1116/1.571659
Published: April 1982
View article titled, A 26‐cm electron‐cyclotron‐resonance ion source for reactive ion beam etching of SiO<sub>2</sub> and Si
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Journal Articles

Vacuum instrumentation on the Daresbury synchrotron radiation source

R. J. Reid
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 1156–1158 (1982)
https://doi.org/10.1116/1.571507
Published: April 1982
View article titled, Vacuum instrumentation on the Daresbury synchrotron radiation source
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Journal Articles

Laboratory study of the PDX/PLT laser blow‐off trace element injectors

D. Manos, D. Ruzic, R. Moore, S. Cohen
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 1230–1233 (1982)
https://doi.org/10.1116/1.571549
Published: April 1982
View article titled, Laboratory study of the PDX/PLT laser blow‐off trace element injectors
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Journal Articles

F2 adsorption on Si observed with SIMS and QCM

J. W. Coburn, E.‐A. Knabbe, E. Kay
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 480–483 (1982)
https://doi.org/10.1116/1.571340
Published: March 1982
View article titled, F<sub>2</sub> adsorption on Si observed with SIMS and QCM
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Journal Articles

Characterization of aluminum–aluminum nitride coatings sputter deposited using the pulsed gas process

R. W. Springer, C. D. Hosford
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 462–465 (1982)
https://doi.org/10.1116/1.571334
Published: March 1982
View article titled, Characterization of aluminum–aluminum nitride coatings sputter deposited using the pulsed gas process
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Journal Articles

Preparation, structural characterization, and properties of atomically clean surfaces

H. E. Farnsworth
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 271–280 (1982)
https://doi.org/10.1116/1.571282
Published: March 1982
View article titled, Preparation, structural characterization, and properties of atomically clean surfaces
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Journal Articles

SIMS analysis of thin surface layers and low kV ion implants related to VLSI and VHSIC materials development

B. F. Phillips
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 793–796 (1982)
https://doi.org/10.1116/1.571486
Published: March 1982
View article titled, SIMS analysis of thin surface layers and low kV ion implants related to VLSI and VHSIC materials development
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Journal Articles

Silicon MBE apparatus for uniform high‐rate deposition on standard format wafers

J.C. Bean, E.A. Sadowski
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 137–142 (1982)
https://doi.org/10.1116/1.571347
Published: February 1982
View article titled, Silicon MBE apparatus for uniform high‐rate deposition on standard format wafers
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Journal Articles

Effect of x‐ray flux on polytetrafluoroethylene in x‐ray photoelectron spectroscopy

D. R. Wheeler, S. V. Pepper
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 226–232 (1982)
https://doi.org/10.1116/1.571362
Published: February 1982
View article titled, Effect of x‐ray flux on polytetrafluoroethylene in x‐ray photoelectron spectroscopy
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Journal Articles

Scanning microbeam using a liquid metal ion source

T. Ishitani, H. Tamura, H. Todokoro
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 80–83 (1982)
https://doi.org/10.1116/1.571313
Published: January 1982
View article titled, Scanning microbeam using a liquid metal ion source
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Journal Articles

Droplet emission in liquid metal ion sources

A. Wagner, T. Venkatesan, P. M. Petroff, D. Barr
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 1186–1189 (1981)
https://doi.org/10.1116/1.571240
Published: November 1981
View article titled, Droplet emission in liquid metal ion sources
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