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Journal Articles

Si incorporation in AlxGa1−xAs grown by molecular beam epitaxy

T. J. Drummond, W. G. Lyons, R. Fischer, R. E. Thorne, H. Morkoç, C. G. Hopkins, C. A. Evans, Jr.
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 957–960 (1982)
https://doi.org/10.1116/1.571873
Published: November 1982
View articletitled, Si incorporation in AlxGa1−xAs grown by molecular beam epitaxy
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Journal Articles

Influence of buffer thickness on the performance of GaAs field effect transistors prepared by molecular beam epitaxy

S. L. Su, R. E. Thorne, R. Fischer, W. G. Lyons, H. Morkoç
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 961–964 (1982)
https://doi.org/10.1116/1.571874
Published: November 1982
View articletitled, Influence of buffer thickness on the performance of GaAs field effect transistors prepared by molecular beam epitaxy
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Journal Articles

The composition and structure of oxide films grown on the (110) crystal face of iron

M. Langell, G. A. Somorjai
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 858–866 (1982)
https://doi.org/10.1116/1.571836
Published: September 1982
View articletitled, The composition and structure of oxide films grown on the (110) crystal face of iron
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Journal Articles

Measurement of ZnSe–GaAs(110) and ZnSe–Ge(110) heterojunction band discontinuities by x‐ray photoelectron spectroscopy (XPS)

Steven P. Kowalczyk, E. A. Kraut, J. R. Waldrop, R. W. Grant
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 482–485 (1982)
https://doi.org/10.1116/1.571684
Published: July 1982
View articletitled, Measurement of ZnSe–GaAs(110) and ZnSe–Ge(110) heterojunction band discontinuities by x‐ray photoelectron spectroscopy (XPS)
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Journal Articles

Influence of substrate temperature on electron mobility in normal and inverted single period modulation doped AlxGa1−xAs/GaAs heterojunctions

T. J. Drummond, R. Fischer, P. Miller, H. Morkoç, A. Y. Cho
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 684–688 (1982)
https://doi.org/10.1116/1.571814
Published: July 1982
View articletitled, Influence of substrate temperature on electron mobility in normal and inverted single period modulation doped AlxGa1−xAs/GaAs heterojunctions
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Journal Articles

Thermal removal of surface carbon from GaAs substrate used in molecular beam epitaxy

Chin‐An Chang
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 663–665 (1982)
https://doi.org/10.1116/1.571809
Published: July 1982
View articletitled, Thermal removal of surface carbon from GaAs substrate used in molecular beam epitaxy
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Journal Articles

The electronic structure of Ge:GaAs(110) interfaces

W. Mönch, Robert S. Bauer, H. Gant, R. Murschall
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 498–506 (1982)
https://doi.org/10.1116/1.571746
Published: July 1982
View articletitled, The electronic structure of Ge:GaAs(110) interfaces
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Journal Articles

Channeling measurements of lattice disorder at the GaAs–InAs(100) heterojunction

R. Stanley Williams, B. M. Paine, W. J. Schaffer, S. P. Kowalczyk
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 386–388 (1982)
https://doi.org/10.1116/1.571787
Published: July 1982
View articletitled, Channeling measurements of lattice disorder at the GaAs–InAs(100) heterojunction
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Journal Articles

Ion–surface interactions during vapor phase crystal growth by sputtering, MBE, and plasma‐enhanced CVD: Applications to semiconductors

J. E. Greene, S. A. Barnett
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 285–302 (1982)
https://doi.org/10.1116/1.571767
Published: July 1982
View articletitled, Ion–surface interactions during vapor phase crystal growth by sputtering, MBE, and plasma‐enhanced CVD: Applications to semiconductors
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Journal Articles

Use of Rutherford backscattering and channeling in the study of (Hg,Cd)Te

K. L. Conway, J. F. Gibbons, T. W. Sigmon
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 212–214 (1982)
https://doi.org/10.1116/1.571718
Published: May 1982
View articletitled, Use of Rutherford backscattering and channeling in the study of (Hg,Cd)Te
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Journal Articles

Growth of lead‐germanium‐telluride thin film structures by molecular beam epitaxy

D. L. Partin
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 1–5 (1982)
https://doi.org/10.1116/1.571714
Published: May 1982
View articletitled, Growth of lead‐germanium‐telluride thin film structures by molecular beam epitaxy
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Journal Articles

Behavior of implantation‐induced defects in HgCdTe

L. O. Bubulac, W. E. Tennant, R. A. Riedel, T. J. Magee
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 251–254 (1982)
https://doi.org/10.1116/1.571728
Published: May 1982
View articletitled, Behavior of implantation‐induced defects in HgCdTe
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Journal Articles

Electron mobility in LPE Hg1−xCdxTe/CdTe layers near zero band‐gap crossing

J. Bajaj, S. H. Shin, G. Bostrup, D. T. Cheung
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 244–246 (1982)
https://doi.org/10.1116/1.571726
Published: May 1982
View articletitled, Electron mobility in LPE Hg1−xCdxTe/CdTe layers near zero band‐gap crossing
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Journal Articles

The growth of CdxHg1−xTe using organometallics

J. B. Mullin, S. J. C. Irvine
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 178–181 (1982)
https://doi.org/10.1116/1.571707
Published: May 1982
View articletitled, The growth of CdxHg1−xTe using organometallics
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Journal Articles

Determination of the InAs–GaAs(100) heterojunction band discontinuities by x‐ray photoelectron spectroscopy (XPS)

S. P. Kowalczyk, W. J. Schaffer, E. A. Kraut, R. W. Grant
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 705–708 (1982)
https://doi.org/10.1116/1.571635
Published: March 1982
View articletitled, Determination of the InAs–GaAs(100) heterojunction band discontinuities by x‐ray photoelectron spectroscopy (XPS)
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Journal Articles

Molecular beam epitaxial growth and electrical transport of graded barriers for nonlinear current conduction

A. C. Gossard, W. Brown, C. L. Allyn, W. Wiegmann
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 694–700 (1982)
https://doi.org/10.1116/1.571633
Published: March 1982
View articletitled, Molecular beam epitaxial growth and electrical transport of graded barriers for nonlinear current conduction
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Journal Articles

Development of steps on GaAs during molecular beam epitaxy

J. M. Van Hove, P. I. Cohen
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 726–729 (1982)
https://doi.org/10.1116/1.571439
Published: March 1982
View articletitled, Development of steps on GaAs during molecular beam epitaxy
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Journal Articles

Single‐crystal GaAs films on amorphous substrates by the CLEFT process

C. O. Bozler, R. W. McClelland, J. P. Salerno, J. C. C. Fan
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 720–725 (1982)
https://doi.org/10.1116/1.571438
Published: March 1982
View articletitled, Single‐crystal GaAs films on amorphous substrates by the CLEFT process
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Journal Articles

The effect of substrate–epitaxial interface on the capacitance–voltage characteristics of Schottky barriers formed on sputtered films of gallium arsenide

A. K. Kulkarni, R. J. Soukup
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 807–810 (1982)
https://doi.org/10.1116/1.571490
Published: March 1982
View articletitled, The effect of substrate–epitaxial interface on the capacitance–voltage characteristics of Schottky barriers formed on sputtered films of gallium arsenide
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Journal Articles

Ion planing and in situ coating: A technique for promoting epitaxial growth

R. A. Hoffman, W. J. Lange, A. J. Noreika, J. J. Schreurs
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 341–344 (1982)
https://doi.org/10.1116/1.571460
Published: March 1982
View articletitled, Ion planing and in situ coating: A technique for promoting epitaxial growth
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