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Journal Articles

Thermal removal of surface carbon from GaAs substrate used in molecular beam epitaxy

Chin‐An Chang
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 663–665 (1982)
https://doi.org/10.1116/1.571809
Published: July 1982
View articletitled, Thermal removal of surface carbon from GaAs substrate used in molecular beam epitaxy
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Journal Articles

Photoemission and photon‐stimulated ion desorption studies of diamond(111): Hydrogen

B. B. Pate, M. H. Hecht, C. Binns, I. Lindau, W. E. Spicer
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 364–367 (1982)
https://doi.org/10.1116/1.571781
Published: July 1982
View articletitled, Photoemission and photon‐stimulated ion desorption studies of diamond(111): Hydrogen
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Journal Articles

Theory of the electronic and atomic structure of Si(111): Surface spin‐polarization effects

D. J. Chadi, R. Del Sole
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 319–326 (1982)
https://doi.org/10.1116/1.571770
Published: July 1982
View articletitled, Theory of the electronic and atomic structure of Si(111): Surface spin‐polarization effects
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Journal Articles

Development of steps on GaAs during molecular beam epitaxy

J. M. Van Hove, P. I. Cohen
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 726–729 (1982)
https://doi.org/10.1116/1.571439
Published: March 1982
View articletitled, Development of steps on GaAs during molecular beam epitaxy
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Journal Articles

Elastic low‐energy electron diffraction from GaAs(110)‐p(1×1)‐Sb(1 ML)

A. Kahn, J. Carelli, C. B. Duke, A. Paton, W. K. Ford
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 775–777 (1982)
https://doi.org/10.1116/1.571456
Published: March 1982
View articletitled, Elastic low‐energy electron diffraction from GaAs(110)‐p(1×1)‐Sb(1 ML)
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Journal Articles

Ion‐bombardment‐induced changes in the electronic structure of silicon surfaces

H. H. Madden, H. P. Hjalmarson
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 502–505 (1982)
https://doi.org/10.1116/1.571417
Published: March 1982
View articletitled, Ion‐bombardment‐induced changes in the electronic structure of silicon surfaces
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Journal Articles

Ion planing and in situ coating: A technique for promoting epitaxial growth

R. A. Hoffman, W. J. Lange, A. J. Noreika, J. J. Schreurs
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 341–344 (1982)
https://doi.org/10.1116/1.571460
Published: March 1982
View articletitled, Ion planing and in situ coating: A technique for promoting epitaxial growth
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Journal Articles

Preparation, structural characterization, and properties of atomically clean surfaces

H. E. Farnsworth
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 271–280 (1982)
https://doi.org/10.1116/1.571282
Published: March 1982
View articletitled, Preparation, structural characterization, and properties of atomically clean surfaces
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Journal Articles

Hydrogen adsorption on Si(111)–(7×7)

R. J. Culbertson, L. C. Feldman, P. J. Silverman, R. Haight
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 868–871 (1982)
https://doi.org/10.1116/1.571368
Published: March 1982
View articletitled, Hydrogen adsorption on Si(111)–(7×7)
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Journal Articles

Silicon MBE apparatus for uniform high‐rate deposition on standard format wafers

J.C. Bean, E.A. Sadowski
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 137–142 (1982)
https://doi.org/10.1116/1.571347
Published: February 1982
View articletitled, Silicon MBE apparatus for uniform high‐rate deposition on standard format wafers
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Journal Articles

Temperature‐dependent low‐energy electron diffraction from aluminum

P. E. Viljoen, B. J. Wessels, G. L. P. Berning, J. P. Roux
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 204–212 (1982)
https://doi.org/10.1116/1.571358
Published: February 1982
View articletitled, Temperature‐dependent low‐energy electron diffraction from aluminum
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Journal Articles

Design of a molecular beam surface scattering apparatus for velocity and angular distribution measurements

S. T. Ceyer, W. J. Siekhaus, G. A. Somorjai
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 726–732 (1981)
https://doi.org/10.1116/1.571094
Published: September 1981
View articletitled, Design of a molecular beam surface scattering apparatus for velocity and angular distribution measurements
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Journal Articles

Atomic structure of GaP (110) and (111) faces

B. W. Lee, R. K. Ni, N. Masud, X. R. Wang, D. C. Wang, M. Rowe
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 294–300 (1981)
https://doi.org/10.1116/1.571052
Published: September 1981
View articletitled, Atomic structure of GaP (110) and (111) faces
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Journal Articles

Atomic geometry of Al−GaAs interfaces: GaAs (110)–p(1 × 1)–Al(ϑ), 0?ϑ?8.5 monolayers

A. Kahn, J. Carelli, D. Kanani, C. B. Duke, A. Paton, L. Brillson
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 331–334 (1981)
https://doi.org/10.1116/1.571058
Published: September 1981
View articletitled, Atomic geometry of Al−GaAs interfaces: GaAs (110)–p(1 × 1)–Al(ϑ), 0?ϑ?8.5 monolayers
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Journal Articles

MBE‐grown fluoride films: A new class of epitaxial dielectrics

R. F. C. Farrow, P. W. Sullivan, G. M. Williams, G. R. Jones, D. C. Cameron
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 415–420 (1981)
https://doi.org/10.1116/1.571030
Published: September 1981
View articletitled, MBE‐grown fluoride films: A new class of epitaxial dielectrics
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Journal Articles

The Si(111) 7×7 to ’’1×1’’ transition: A summary

M. B. Webb, P. A. Bennett
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 18, 847–851 (1981)
https://doi.org/10.1116/1.570975
Published: April 1981
View articletitled, The Si(111) 7×7 to ’’1×1’’ transition: A summary
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Journal Articles

LEED intensity analysis of the structure of Al on GaAs(110)

A. Kahn, D. Kanani, J. Carelli, J. L. Yeh, C. B. Duke, R. J. Meyer, A. Paton, L. Brillson
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 18, 792–796 (1981)
https://doi.org/10.1116/1.570949
Published: April 1981
View articletitled, LEED intensity analysis of the structure of Al on GaAs(110)
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Journal Articles

Analysis of low‐energy electron diffraction intensities from ZnS(110)

C. B. Duke, R. J. Meyer, A. Paton, A. Kahn, J. Carelli, J. L. Yeh
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 18, 866–870 (1981)
https://doi.org/10.1116/1.570979
Published: April 1981
View articletitled, Analysis of low‐energy electron diffraction intensities from ZnS(110)
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Journal Articles

Vibrational spectra of CO chemisorbed on Fe (110)

W. Erley
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 18, 472–475 (1981)
https://doi.org/10.1116/1.570768
Published: March 1981
View articletitled, Vibrational spectra of CO chemisorbed on Fe (110)
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Journal Articles

Two‐dimensional chemisorbed phases

L. D. Roelofs, A. R. Kortan, T. L. Einstein, Robert L. Park
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 18, 492–499 (1981)
https://doi.org/10.1116/1.570774
Published: March 1981
View articletitled, Two‐dimensional chemisorbed phases
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