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Journal Articles

The composition and structure of oxide films grown on the (110) crystal face of iron

M. Langell, G. A. Somorjai
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 858–866 (1982)
https://doi.org/10.1116/1.571836
Published: September 1982
View articletitled, The composition and structure of oxide films grown on the (110) crystal face of iron
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Journal Articles

Ideal and relaxed surfaces of SiC

D. H. Lee, J. D. Joannopoulos
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 351–357 (1982)
https://doi.org/10.1116/1.571779
Published: July 1982
View articletitled, Ideal and relaxed surfaces of SiC
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Journal Articles

Electronic structure of GaAsxP1−x/GaP strained‐layer superlattices with x<0.5

G. C. Osbourn
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 469–472 (1982)
https://doi.org/10.1116/1.571681
Published: July 1982
View articletitled, Electronic structure of GaAsxP1−x/GaP strained‐layer superlattices with x&lt;0.5
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Journal Articles

Mass effect in the physical sputtering of multicomponent materials

Harold F. Winters
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 493–497 (1982)
https://doi.org/10.1116/1.571415
Published: March 1982
View articletitled, Mass effect in the physical sputtering of multicomponent materials
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Journal Articles

CdSe1−xOy films prepared by reactive planar magnetron sputtering

S. Maniv, W. D. Westwood, F. R. Shepherd, P. J. Scanlon, H. Plattner
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 1–6 (1982)
https://doi.org/10.1116/1.571302
Published: January 1982
View articletitled, CdSe1−xOy films prepared by reactive planar magnetron sputtering
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Journal Articles

Electron transmission probabilities through GaAs/strained GaAsP/GaAs(100) heterostructures

G. C. Osbourn
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 592–595 (1981)
https://doi.org/10.1116/1.571135
Published: September 1981
View articletitled, Electron transmission probabilities through GaAs/strained GaAsP/GaAs(100) heterostructures
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Journal Articles

Reactive Schottky barrier formation: The Pd/Si interface

J. L. Freeouf, G. W. Rubloff, P. S. Ho, T. S. Kuan
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 17, 916–919 (1980)
https://doi.org/10.1116/1.570616
Published: September 1980
View articletitled, Reactive Schottky barrier formation: The Pd/Si interface
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Journal Articles

Radio‐frequency sputtered NiFe films on Au

K. Y. Ahn
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 17, 626–628 (1980)
https://doi.org/10.1116/1.570527
Published: March 1980
View articletitled, Radio‐frequency sputtered NiFe films on Au
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Journal Articles

Growth of single‐crystal metastable InSb1−xBix and (GaSb)1−xGex semiconducting films

K. C. Cadien, J. L. Zilko, A. H. Eltoukhy, J. E. Greene
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 17, 441–444 (1980)
https://doi.org/10.1116/1.570477
Published: January 1980
View articletitled, Growth of single‐crystal metastable InSb1−xBix and (GaSb)1−xGex semiconducting films
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Journal Articles

Observations of stresses in thin films of palladium and platinum silicides on silicon

J. Angilello, F. d’Heurle, S. Petersson, A. Segmüller
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 17, 471–475 (1980)
https://doi.org/10.1116/1.570486
Published: January 1980
View articletitled, Observations of stresses in thin films of palladium and platinum silicides on silicon
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Journal Articles

Substrate effect on the lattice constants of the MBE‐grown In1−xGaxAs and GaSb1−yAsy

Chin‐An Chang, Armin Segmüller
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 16, 285–286 (1979)
https://doi.org/10.1116/1.569927
Published: March 1979
View articletitled, Substrate effect on the lattice constants of the MBE‐grown In1−xGaxAs and GaSb1−yAsy
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Journal Articles

Applications of ion implantation to magnetic bubble devices

J. C. North, R. Wolfe, T. J. Nelson
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 15, 1675–1684 (1978)
https://doi.org/10.1116/1.569827
Published: September 1978
View articletitled, Applications of ion implantation to magnetic bubble devices
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Journal Articles

Structural analysis of rf and dc sputtered Nb3Ge thin films containing oxygen

E. I. Alessandrini, R. B. Laibowitz, C. C. Tsuei
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 15, 377–381 (1978)
https://doi.org/10.1116/1.569551
Published: March 1978
View articletitled, Structural analysis of rf and dc sputtered Nb3Ge thin films containing oxygen
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Journal Articles

Electronic structure at an abrupt GaAs–Ge interface

G. A. Baraff, Joel A. Appelbaum, D. R. Hamann
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 14, 999–1005 (1977)
https://doi.org/10.1116/1.569411
Published: July 1977
View articletitled, Electronic structure at an abrupt GaAs–Ge interface
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Journal Articles

Elementary theory of heterojunctions

Walter A. Harrison
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 14, 1016–1021 (1977)
https://doi.org/10.1116/1.569312
Published: July 1977
View articletitled, Elementary theory of heterojunctions
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Journal Articles

Almost perfect epitaxial multilayers

J. W. Matthews, A. E. Blakeslee
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 14, 989–991 (1977)
https://doi.org/10.1116/1.569409
Published: July 1977
View articletitled, Almost perfect epitaxial multilayers
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Journal Articles

Helium detrapping and release from metal tritides

William J. Camp
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 14, 514–517 (1977)
https://doi.org/10.1116/1.569292
Published: January 1977
View articletitled, Helium detrapping and release from metal tritides
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Journal Articles

Abstract: Physical vapor deposition of GaxIn1−xSb

R. O. Dillon, R. F. Bunshah, H. A. Beale, V. L. Rehn, N. Bottka
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 13, 175 (1976)
https://doi.org/10.1116/1.568817
Published: January 1976
View articletitled, Abstract: Physical vapor deposition of GaxIn1−xSb
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Journal Articles

Abstract: A new model for silicon (100) 4×4 and (111) 7×7 LEED patterns

Brenton L. Mattes
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 13, 360 (1976)
https://doi.org/10.1116/1.568882
Published: January 1976
View articletitled, Abstract: A new model for silicon (100) 4×4 and (111) 7×7 LEED patterns
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Journal Articles

Abstract: Properties of interfacial defects in III–V compound semiconductors

P. M. Petroff
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 13, 37 (1976)
https://doi.org/10.1116/1.568895
Published: January 1976
View articletitled, Abstract: Properties of interfacial defects in III–V compound semiconductors
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