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Journal Articles

Physics and chemistry of semiconductor interfaces: Some future directions

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Frank Herman
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 643–646 (1982)
https://doi.org/10.1116/1.571805
Published: July 1982
View articletitled, Physics and chemistry of semiconductor interfaces: Some future directions
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Journal Articles

Electronic structure of GaP–AlP(100) superlattices

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J. Y. Kim, A. Madhukar
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 528–530 (1982)
https://doi.org/10.1116/1.571753
Published: July 1982
View articletitled, Electronic structure of GaP–AlP(100) superlattices
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Journal Articles

Band structure of impurity‐sheet‐doped superlattice alloys

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Harold P. Hjalmarson
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 524–527 (1982)
https://doi.org/10.1116/1.571752
Published: July 1982
View articletitled, Band structure of impurity‐sheet‐doped superlattice alloys
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Journal Articles

Effective‐mass theory for electrons in heterostructures

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S. R. White, G. E. Margues, L. J. Sham
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 544–547 (1982)
https://doi.org/10.1116/1.571757
Published: July 1982
View articletitled, Effective‐mass theory for electrons in heterostructures
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Journal Articles

Theory of heterostructures: A reduced Hamiltonian method with evanescent states and transfer matrices

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Yia‐Chung Chang, J. N. Schulman
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 540–543 (1982)
https://doi.org/10.1116/1.571756
Published: July 1982
View articletitled, Theory of heterostructures: A reduced Hamiltonian method with evanescent states and transfer matrices
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Journal Articles

Growth and photoluminescence characterization of a GaAsxP1−x/GaP strained‐layer superlattice

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P. L. Gourley, R. M. Biefeld
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 473–475 (1982)
https://doi.org/10.1116/1.571682
Published: July 1982
View articletitled, Growth and photoluminescence characterization of a GaAsxP1−x/GaP strained‐layer superlattice
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Journal Articles

Electronic structure of GaAsxP1−x/GaP strained‐layer superlattices with x<0.5

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G. C. Osbourn
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 469–472 (1982)
https://doi.org/10.1116/1.571681
Published: July 1982
View articletitled, Electronic structure of GaAsxP1−x/GaP strained‐layer superlattices with x&lt;0.5
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Journal Articles

Planar channeling of ions in compound semiconductor superlattices

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John H. Barrett
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 384–385 (1982)
https://doi.org/10.1116/1.571786
Published: July 1982
View articletitled, Planar channeling of ions in compound semiconductor superlattices
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Journal Articles

Growth of lead‐germanium‐telluride thin film structures by molecular beam epitaxy

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D. L. Partin
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 1–5 (1982)
https://doi.org/10.1116/1.571714
Published: May 1982
View articletitled, Growth of lead‐germanium‐telluride thin film structures by molecular beam epitaxy
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Journal Articles

Electronic structure of defects at Si/SiO2 interfaces

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F. Herman, R. V. Kasowski
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 395–401 (1981)
https://doi.org/10.1116/1.571071
Published: September 1981
View articletitled, Electronic structure of defects at Si/SiO2 interfaces
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Journal Articles

Molecular beam epitaxy of Ge–GaAs superlattices

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C.‐A. Chang, W. ‐K. Chu, E. E. Mendez, L. L. Chang, L. Esaki
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 567–570 (1981)
https://doi.org/10.1116/1.571128
Published: September 1981
View articletitled, Molecular beam epitaxy of Ge–GaAs superlattices
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Journal Articles

Deformation potentials of superlattices and interfaces

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K. K. Mon, K. Hess, J.D. Dow
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 564–566 (1981)
https://doi.org/10.1116/1.571127
Published: September 1981
View articletitled, Deformation potentials of superlattices and interfaces
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Journal Articles

Spatial separation of carriers in InAs–GaSb superlattices

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L. L. Chang, G. A. Sai‐Halasz, L. Esaki, R. L. Aggarwal
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 589–591 (1981)
https://doi.org/10.1116/1.571134
Published: September 1981
View articletitled, Spatial separation of carriers in InAs–GaSb superlattices
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Journal Articles

Ideal vacancy induced band gap levels in lattice matched thin superlattices: The GaAs–AlAs(100) and GaSb–InAs(100) systems

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S. Das Sarma, A. Madhukar
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 447–452 (1981)
https://doi.org/10.1116/1.571036
Published: September 1981
View articletitled, Ideal vacancy induced band gap levels in lattice matched thin superlattices: The GaAs–AlAs(100) and GaSb–InAs(100) systems
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Journal Articles

Recent European developments in MBE

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R. F. C. Farrow
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 150–156 (1981)
https://doi.org/10.1116/1.571027
Published: July 1981
View articletitled, Recent European developments in MBE
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Journal Articles

Intrinsic and extrinsic interface states at lattice matched interfaces between III–V compound semiconductors: The InAs/GaSb(110) system

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A. Madhukar, S. Das Sarma
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 17, 1120–1127 (1980)
https://doi.org/10.1116/1.570626
Published: September 1980
View articletitled, Intrinsic and extrinsic interface states at lattice matched interfaces between III–V compound semiconductors: The InAs/GaSb(110) system
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Journal Articles

Electrochemistry of single‐crystal surfaces

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Arthur T. Hubbard
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 17, 49–54 (1980)
https://doi.org/10.1116/1.570493
Published: January 1980
View articletitled, Electrochemistry of single‐crystal surfaces
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Journal Articles

Electronic structure of semi‐infinite III–V compound semiconductor surfaces and interfaces: Application to InAs/GaSb(110)

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N. V. Dandekar, A. Madhukar, D. N. Lowy
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 16, 1364–1369 (1979)
https://doi.org/10.1116/1.570200
Published: September 1979
View articletitled, Electronic structure of semi‐infinite III–V compound semiconductor surfaces and interfaces: Application to InAs/GaSb(110)
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Journal Articles

Two‐dimensional effects and effective masses of the InAs/GaSb (001) superlattices

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A. Madhukar, N. V. Dandekar, R. N. Nucho
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 16, 1507–1511 (1979)
https://doi.org/10.1116/1.570235
Published: September 1979
View articletitled, Two‐dimensional effects and effective masses of the InAs/GaSb (001) superlattices
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Journal Articles

Abstract: Observation of semiconductor–semimetal transition in InAs–GaSb superlattices

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L. L. Chang, G. A. Sai–Halasz, N. J. Kawai, L. Esaki
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 16, 1504–1505 (1979)
https://doi.org/10.1116/1.570233
Published: September 1979
View articletitled, Abstract: Observation of semiconductor–semimetal transition in InAs–GaSb superlattices
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