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Journal Articles

Influence of substrate temperature on electron mobility in normal and inverted single period modulation doped AlxGa1−xAs/GaAs heterojunctions

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T. J. Drummond, R. Fischer, P. Miller, H. Morkoç, A. Y. Cho
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 684–688 (1982)
https://doi.org/10.1116/1.571814
Published: July 1982
View articletitled, Influence of substrate temperature on electron mobility in normal and inverted single period modulation doped AlxGa1−xAs/GaAs heterojunctions
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Journal Articles

Structural characterization of the interfacial reactions between palladium and gallium arsenide

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Xian‐Fu Zeng, D. D. L. Chung
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 611–614 (1982)
https://doi.org/10.1116/1.571796
Published: July 1982
View articletitled, Structural characterization of the interfacial reactions between palladium and gallium arsenide
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Journal Articles

Physics and chemistry of semiconductor interfaces: Some future directions

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Frank Herman
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 643–646 (1982)
https://doi.org/10.1116/1.571805
Published: July 1982
View articletitled, Physics and chemistry of semiconductor interfaces: Some future directions
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Journal Articles

Electronic structure of GaP–AlP(100) superlattices

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J. Y. Kim, A. Madhukar
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 528–530 (1982)
https://doi.org/10.1116/1.571753
Published: July 1982
View articletitled, Electronic structure of GaP–AlP(100) superlattices
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Journal Articles

Band structure of impurity‐sheet‐doped superlattice alloys

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Harold P. Hjalmarson
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 524–527 (1982)
https://doi.org/10.1116/1.571752
Published: July 1982
View articletitled, Band structure of impurity‐sheet‐doped superlattice alloys
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Journal Articles

Laser‐induced order–disorder transition of the (100)InP surface

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J. M. Moison, M. Bensoussan
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 315–318 (1982)
https://doi.org/10.1116/1.571769
Published: July 1982
View articletitled, Laser‐induced order–disorder transition of the (100)InP surface
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Journal Articles

Crystallographic relationships and interfacial properties of Ag on GaAs(100) surfaces

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R. Ludeke, T.‐C. Chiang, D. E. Eastman
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 599–606 (1982)
https://doi.org/10.1116/1.571794
Published: July 1982
View articletitled, Crystallographic relationships and interfacial properties of Ag on GaAs(100) surfaces
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Journal Articles

Self‐consistent calculations in InAs–GaSb heterojunctions

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G. Bastard, E. E. Mendez, L. L. Chang, L. Esaki
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 531–533 (1982)
https://doi.org/10.1116/1.571754
Published: July 1982
View articletitled, Self‐consistent calculations in InAs–GaSb heterojunctions
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Journal Articles

Photoionization and thermal activation of compound semiconductor MOS interfaces and origin of interface states

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Hideki Hasegawa, Takayuki Sawada
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 457–462 (1982)
https://doi.org/10.1116/1.571678
Published: July 1982
View articletitled, Photoionization and thermal activation of compound semiconductor MOS interfaces and origin of interface states
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Journal Articles

Localized and delocalized charge transfer during adsorption on semiconductors: Experiments and cluster calculations on the prototype surface ZnO(101̄0)

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W. Göpel, G. Rocker
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 389–397 (1982)
https://doi.org/10.1116/1.571788
Published: July 1982
View articletitled, Localized and delocalized charge transfer during adsorption on semiconductors: Experiments and cluster calculations on the prototype surface ZnO(101̄0)
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Journal Articles

Effective‐mass theory for electrons in heterostructures

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S. R. White, G. E. Margues, L. J. Sham
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 544–547 (1982)
https://doi.org/10.1116/1.571757
Published: July 1982
View articletitled, Effective‐mass theory for electrons in heterostructures
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Journal Articles

Theory of heterostructures: A reduced Hamiltonian method with evanescent states and transfer matrices

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Yia‐Chung Chang, J. N. Schulman
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 540–543 (1982)
https://doi.org/10.1116/1.571756
Published: July 1982
View articletitled, Theory of heterostructures: A reduced Hamiltonian method with evanescent states and transfer matrices
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Journal Articles

Growth and photoluminescence characterization of a GaAsxP1−x/GaP strained‐layer superlattice

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P. L. Gourley, R. M. Biefeld
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 473–475 (1982)
https://doi.org/10.1116/1.571682
Published: July 1982
View articletitled, Growth and photoluminescence characterization of a GaAsxP1−x/GaP strained‐layer superlattice
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Journal Articles

Planar channeling of ions in compound semiconductor superlattices

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John H. Barrett
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 384–385 (1982)
https://doi.org/10.1116/1.571786
Published: July 1982
View articletitled, Planar channeling of ions in compound semiconductor superlattices
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Journal Articles

Schottky barrier modulation at metal contacts to CdS and CdSe

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C. F. Brucker, L. J. Brillson, A. D. Katnani, N. G. Stoffel, G. Margaritondo
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 590–593 (1982)
https://doi.org/10.1116/1.571792
Published: July 1982
View articletitled, Schottky barrier modulation at metal contacts to CdS and CdSe
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Journal Articles

Picosecond time‐resolved photoelectron spectroscopy of ZnTe

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R. T. Williams, T. R. Royt, J. C. Rife, J. P. Long, M. N. Kabler
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 509–513 (1982)
https://doi.org/10.1116/1.571748
Published: July 1982
View articletitled, Picosecond time‐resolved photoelectron spectroscopy of ZnTe
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Journal Articles

Ion–surface interactions during vapor phase crystal growth by sputtering, MBE, and plasma‐enhanced CVD: Applications to semiconductors

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J. E. Greene, S. A. Barnett
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 285–302 (1982)
https://doi.org/10.1116/1.571767
Published: July 1982
View articletitled, Ion–surface interactions during vapor phase crystal growth by sputtering, MBE, and plasma‐enhanced CVD: Applications to semiconductors
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Journal Articles

Bound and resonant surface states at the (110) surfaces of AlSb, AlAs, and AlP

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Richard P. Beres, Roland E. Allen, Jean Pierre Buisson, Marshall A. Bowen, George F. Blackwell, Harold P. Hjalmarson, John D. Dow
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 548–550 (1982)
https://doi.org/10.1116/1.571758
Published: July 1982
View articletitled, Bound and resonant surface states at the (110) surfaces of AlSb, AlAs, and AlP
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Journal Articles

Surface and contact properties of GaAs overlaid by silver

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J. M. Palau, E. Testemale, A. Ismail, L. Lassabatere
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 6–13 (1982)
https://doi.org/10.1116/1.571739
Published: May 1982
View articletitled, Surface and contact properties of GaAs overlaid by silver
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Journal Articles

Theory for electron mobilities in n‐type Hg1−xCdxTe and CdTe at low temperatures

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J. R. Meyer, F. J. Bartoli
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 237–240 (1982)
https://doi.org/10.1116/1.571723
Published: May 1982
View articletitled, Theory for electron mobilities in n‐type Hg1−xCdxTe and CdTe at low temperatures
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