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Journal Articles

Crystallographic relationships and interfacial properties of Ag on GaAs(100) surfaces

R. Ludeke, T.‐C. Chiang, D. E. Eastman
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 599–606 (1982)
https://doi.org/10.1116/1.571794
Published: July 1982
View articletitled, Crystallographic relationships and interfacial properties of Ag on GaAs(100) surfaces
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Journal Articles

Growth and photoluminescence characterization of a GaAsxP1−x/GaP strained‐layer superlattice

P. L. Gourley, R. M. Biefeld
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 473–475 (1982)
https://doi.org/10.1116/1.571682
Published: July 1982
View articletitled, Growth and photoluminescence characterization of a GaAsxP1−x/GaP strained‐layer superlattice
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Journal Articles

Optical and field effect studies of the Hg0.7Cd0.3 Te–anodic oxide interface

R. B. Schoolar, B. K. Janousek, R. L. Alt, R. C. Carscallen, M. J. Daughtery, A. A. Fote
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 164–167 (1982)
https://doi.org/10.1116/1.571704
Published: May 1982
View articletitled, Optical and field effect studies of the Hg0.7Cd0.3 Te–anodic oxide interface
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Journal Articles

Origin of U‐shaped background density of interface states at nonlattice matched semiconductor interfaces

J. Singh, A. Madhukar
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 437–442 (1981)
https://doi.org/10.1116/1.571034
Published: September 1981
View articletitled, Origin of U‐shaped background density of interface states at nonlattice matched semiconductor interfaces
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Journal Articles

Transient capacitance spectroscopy of semiconductor/insulator interface states: Thermally activated capture cross section of Si/SiO2 interface states

E. Kamieniecki, N. Gomma, A. Kloc, R. Nitecki
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 18, 883–887 (1981)
https://doi.org/10.1116/1.570984
Published: April 1981
View articletitled, Transient capacitance spectroscopy of semiconductor/insulator interface states: Thermally activated capture cross section of Si/SiO2 interface states
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Journal Articles

Electronic structure of semi‐infinite III–V compound semiconductor surfaces and interfaces: Application to InAs/GaSb(110)

N. V. Dandekar, A. Madhukar, D. N. Lowy
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 16, 1364–1369 (1979)
https://doi.org/10.1116/1.570200
Published: September 1979
View articletitled, Electronic structure of semi‐infinite III–V compound semiconductor surfaces and interfaces: Application to InAs/GaSb(110)
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Journal Articles

Ideal CdTe/HgTe superlattices

J. N. Schulman, T. C. McGill
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 16, 1513–1516 (1979)
https://doi.org/10.1116/1.570237
Published: September 1979
View articletitled, Ideal CdTe/HgTe superlattices
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Journal Articles

Doping superlattices

G. H. Döhler
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 16, 851–856 (1979)
https://doi.org/10.1116/1.570099
Published: May 1979
View articletitled, Doping superlattices
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Journal Articles

Tight‐binding study of the electronic structure of the InAs–GaSb (001) superlattice

R. N. Nucho, A. Madhukar
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 15, 1530–1534 (1978)
https://doi.org/10.1116/1.569782
Published: July 1978
View articletitled, Tight‐binding study of the electronic structure of the InAs–GaSb (001) superlattice
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Journal Articles

Thickness dependence of an amorphous overlayer Ge film on the electrical conductivity of ultrathin Pt films

S. Ogawa
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 15, 363–365 (1978)
https://doi.org/10.1116/1.569547
Published: March 1978
View articletitled, Thickness dependence of an amorphous overlayer Ge film on the electrical conductivity of ultrathin Pt films
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Journal Articles

Highly electronegative contacts to compound semiconductors

R. A. Scranton, J. S. Best, J. O. McCaldin
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 14, 930–934 (1977)
https://doi.org/10.1116/1.569391
Published: July 1977
View articletitled, Highly electronegative contacts to compound semiconductors
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Journal Articles

Surface‐band theory for selective adsorption and surface transport properties

R. I. Masel, R. P. Merrill
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 14, 333–338 (1977)
https://doi.org/10.1116/1.569203
Published: January 1977
View articletitled, Surface‐band theory for selective adsorption and surface transport properties
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Journal Articles

Empty semiconductor surface states: Core‐level photoyield studies

R. S. Bauer, R. Z. Bachrach, S. A. Flodstrom, J. C. McMenamin
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 14, 378–382 (1977)
https://doi.org/10.1116/1.569212
Published: January 1977
View articletitled, Empty semiconductor surface states: Core‐level photoyield studies
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Journal Articles

Heterojunctions in photovoltaic devices

D. L. Feucht
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 14, 57–64 (1977)
https://doi.org/10.1116/1.569153
Published: January 1977
View articletitled, Heterojunctions in photovoltaic devices
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Journal Articles

Theoretical study of the GaAs (100) surface

Joel A. Appelbaum, G. A. Baraff, D. R. Hamann
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 13, 751–756 (1976)
https://doi.org/10.1116/1.568983
Published: July 1976
View articletitled, Theoretical study of the GaAs (100) surface
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Journal Articles

Effect of minority‐carrier injection on Schottky‐barrier heights that approach the semiconductor band gap

C. H. Huang, C. R. Crowell
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 13, 876–883 (1976)
https://doi.org/10.1116/1.569010
Published: July 1976
View articletitled, Effect of minority‐carrier injection on Schottky‐barrier heights that approach the semiconductor band gap
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Journal Articles

Abstract: Metal‐induced extrinsic surface states on Si, Ge, and GaAs

J. E. Rowe
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 13, 248–250 (1976)
https://doi.org/10.1116/1.568860
Published: January 1976
View articletitled, Abstract: Metal‐induced extrinsic surface states on Si, Ge, and GaAs
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Journal Articles

Abstract: Surface properties of a two−band semiconductor

W. Ho, S. L. Cunningham, W. H. Weinberg, L. Dobrzynski
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 12, 351–352 (1975)
https://doi.org/10.1116/1.568785
Published: January 1975
View articletitled, Abstract: Surface properties of a two−band semiconductor
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Journal Articles

Dielectric instability and breakdown in wide bandgap insulators

T. H. DiStefano, M. Shatzkes
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 12, 37–46 (1975)
https://doi.org/10.1116/1.568797
Published: January 1975
View articletitled, Dielectric instability and breakdown in wide bandgap insulators
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Journal Articles

Phenomenology of metal-semiconductor electrical barriers

T. C. McGill
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 11, 935–942 (1974)
https://doi.org/10.1116/1.1318709
Published: November 1974
View articletitled, Phenomenology of metal-semiconductor electrical barriers
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