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Journal Articles

Clustering and second‐neighbor interactions in semiconductor alloys

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W. Porod, D. K. Ferry, K. A. Jones
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 965–968 (1982)
https://doi.org/10.1116/1.571875
Published: November 1982
View articletitled, Clustering and second‐neighbor interactions in semiconductor alloys
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Journal Articles

An investigation of the interface electronics structure of Si–SiO2 junctions

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S. Ciraci, Ş. Ellialtioğlu, Ş. Erkoç
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 402–404 (1982)
https://doi.org/10.1116/1.571664
Published: July 1982
View articletitled, An investigation of the interface electronics structure of Si–SiO2 junctions
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Journal Articles

Effective‐mass theory for electrons in heterostructures

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S. R. White, G. E. Margues, L. J. Sham
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 544–547 (1982)
https://doi.org/10.1116/1.571757
Published: July 1982
View articletitled, Effective‐mass theory for electrons in heterostructures
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Journal Articles

Theory of heterostructures: A reduced Hamiltonian method with evanescent states and transfer matrices

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Yia‐Chung Chang, J. N. Schulman
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 540–543 (1982)
https://doi.org/10.1116/1.571756
Published: July 1982
View articletitled, Theory of heterostructures: A reduced Hamiltonian method with evanescent states and transfer matrices
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Journal Articles

Electronic structure of GaAsxP1−x/GaP strained‐layer superlattices with x<0.5

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G. C. Osbourn
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 469–472 (1982)
https://doi.org/10.1116/1.571681
Published: July 1982
View articletitled, Electronic structure of GaAsxP1−x/GaP strained‐layer superlattices with x&lt;0.5
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Journal Articles

On the interface connection rules for effective‐mass wave functions at an abrupt heterojunction between two semiconductors with different effective mass

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Herbert Kroemer, Qi‐Gao Zhu
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 551–553 (1982)
https://doi.org/10.1116/1.571759
Published: July 1982
View articletitled, On the interface connection rules for effective‐mass wave functions at an abrupt heterojunction between two semiconductors with different effective mass
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Journal Articles

Bulk vacancies in CdxHg1−xTe

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C. A. Swarts, M. S. Daw, T. C. McGill
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 198–200 (1982)
https://doi.org/10.1116/1.571712
Published: May 1982
View articletitled, Bulk vacancies in CdxHg1−xTe
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Journal Articles

Electron transmission probabilities through GaAs/strained GaAsP/GaAs(100) heterostructures

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G. C. Osbourn
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 592–595 (1981)
https://doi.org/10.1116/1.571135
Published: September 1981
View articletitled, Electron transmission probabilities through GaAs/strained GaAsP/GaAs(100) heterostructures
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Journal Articles

Tunneling transmission coefficients for electrons through (100) GaAs–Ga1−xAlxAs–GaAs heterostructures

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G. C. Osbourn
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 17, 1104–1107 (1980)
https://doi.org/10.1116/1.570622
Published: September 1980
View articletitled, Tunneling transmission coefficients for electrons through (100) GaAs–Ga1−xAlxAs–GaAs heterostructures
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Journal Articles

Bonding of Al and Ga to GaAs(110)

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Perry Skeath, I. Lindau, C. Y. Su, P. W. Chye, W. E. Spicer
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 17, 511–516 (1980)
https://doi.org/10.1116/1.570497
Published: January 1980
View articletitled, Bonding of Al and Ga to GaAs(110)
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Journal Articles

Theoretical and experimental investigations of the electronic structure of oxygen on silicon

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M. Chen, Inder P. Batra, C. R. Brundle
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 16, 1216–1220 (1979)
https://doi.org/10.1116/1.570194
Published: September 1979
View articletitled, Theoretical and experimental investigations of the electronic structure of oxygen on silicon
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Journal Articles

Electronic structure of Al chemisorbed on GaAs(110)

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Eugene J. Mele, J. D. Joannopoulos
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 16, 1154–1158 (1979)
https://doi.org/10.1116/1.570180
Published: September 1979
View articletitled, Electronic structure of Al chemisorbed on GaAs(110)
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Journal Articles

Electronic structure of semi‐infinite III–V compound semiconductor surfaces and interfaces: Application to InAs/GaSb(110)

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N. V. Dandekar, A. Madhukar, D. N. Lowy
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 16, 1364–1369 (1979)
https://doi.org/10.1116/1.570200
Published: September 1979
View articletitled, Electronic structure of semi‐infinite III–V compound semiconductor surfaces and interfaces: Application to InAs/GaSb(110)
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Journal Articles

Two‐dimensional effects and effective masses of the InAs/GaSb (001) superlattices

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A. Madhukar, N. V. Dandekar, R. N. Nucho
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 16, 1507–1511 (1979)
https://doi.org/10.1116/1.570235
Published: September 1979
View articletitled, Two‐dimensional effects and effective masses of the InAs/GaSb (001) superlattices
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Journal Articles

First principles tight‐binding method for investigating electronic properties of surfaces, interfaces, and bulk solids

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Inder P. Batra
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 16, 1359–1363 (1979)
https://doi.org/10.1116/1.570199
Published: September 1979
View articletitled, First principles tight‐binding method for investigating electronic properties of surfaces, interfaces, and bulk solids
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Journal Articles

Critique of the empirical tight‐binding method for semiconductor surfaces and interfaces

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Sokrates T. Pantelides, J. Pollmann
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 16, 1349–1358 (1979)
https://doi.org/10.1116/1.570198
Published: September 1979
View articletitled, Critique of the empirical tight‐binding method for semiconductor surfaces and interfaces
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Journal Articles

Carrier transport coefficients across GaAs–GaAlAs (100) interfaces

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G. C. Osbourn, D. L. Smith
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 16, 1529–1532 (1979)
https://doi.org/10.1116/1.570242
Published: September 1979
View articletitled, Carrier transport coefficients across GaAs–GaAlAs (100) interfaces
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Journal Articles

Ideal CdTe/HgTe superlattices

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J. N. Schulman, T. C. McGill
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 16, 1513–1516 (1979)
https://doi.org/10.1116/1.570237
Published: September 1979
View articletitled, Ideal CdTe/HgTe superlattices
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Journal Articles

Bonding geometry and electronic structure of the chalcogens on Ni(111)

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T. Weston Capehart, Thor N. Rhodin
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 16, 594–598 (1979)
https://doi.org/10.1116/1.570007
Published: March 1979
View articletitled, Bonding geometry and electronic structure of the chalcogens on Ni(111)
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Journal Articles

Surface electronic structure studies of GaAs (110)

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J. A. Knapp, D. E. Eastman, K. C. Pandey, F. Patella
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 15, 1252–1255 (1978)
https://doi.org/10.1116/1.569748
Published: July 1978
View articletitled, Surface electronic structure studies of GaAs (110)
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