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Journal Articles

Clustering and second‐neighbor interactions in semiconductor alloys

W. Porod, D. K. Ferry, K. A. Jones
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 965–968 (1982)
https://doi.org/10.1116/1.571875
Published: November 1982
View article titled, Clustering and second‐neighbor interactions in semiconductor alloys
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Journal Articles

Chlorine and hydrogen chloride on clean and oxygen‐covered Fe(100): Bonding and reactions

N. C. Debnath, Alfred B. Anderson
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 945–951 (1982)
https://doi.org/10.1116/1.571871
Published: November 1982
View article titled, Chlorine and hydrogen chloride on clean and oxygen‐covered Fe(100): Bonding and reactions
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Journal Articles

Mott insulator model of the Si(111)–(2×1) surface

Antonio Redondo, William A. Goddard, III, T. C. McGill
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 649–654 (1982)
https://doi.org/10.1116/1.571806
Published: July 1982
View article titled, Mott insulator model of the Si(111)–(2×1) surface
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Journal Articles

Electronic correlation and the Si(100) surface: Buckling versus nonbuckling

Antonio Redondo, William A. Goddard, III
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 344–350 (1982)
https://doi.org/10.1116/1.571778
Published: July 1982
View article titled, Electronic correlation and the Si(100) surface: Buckling versus nonbuckling
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Journal Articles

Giant replicate cell approach to the electronic structure calculation of graded interface regions

W. Y. Ching
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 398–401 (1982)
https://doi.org/10.1116/1.571789
Published: July 1982
View article titled, Giant replicate cell approach to the electronic structure calculation of graded interface regions
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Journal Articles

Chemical bonding at the Si–metal interface: Si–Ni and Si–Cr

A. Franciosi, J. H. Weaver, D. G. O’Neill, Y. Chabal, J. E. Rowe, J. M. Poate, O. Bisi, C. Calandra
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 624–627 (1982)
https://doi.org/10.1116/1.571800
Published: July 1982
View article titled, Chemical bonding at the Si–metal interface: Si–Ni and Si–Cr
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Journal Articles

Electronic structure of the π‐bonded chain model and the nonbuckled antiferromagnetic insulator model for the Si(111) surface

John E. Northrup, Marvin L. Cohen
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 333–336 (1982)
https://doi.org/10.1116/1.571774
Published: July 1982
View article titled, Electronic structure of the π‐bonded chain model and the nonbuckled antiferromagnetic insulator model for the Si(111) surface
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Journal Articles

Theoretical determination of electron density distribution in an orbitron device correlated with results concerning its ionization efficiency

B. Petit, M. L. Feidt
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 1109–1113 (1982)
https://doi.org/10.1116/1.571579
Published: April 1982
View article titled, Theoretical determination of electron density distribution in an orbitron device correlated with results concerning its ionization efficiency
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Journal Articles

Changes in tokamak plasma properties during impurity injection

S. Cohen, J. Cecchi, C. Daughney, S. Davis, D. Dimock, P. Efthimion, M. Finkenthal, R. Fonck, E. Hinnov, R. Hulse, D. Johnson, D. Manos, D. McNeill, S. Medley, E. Meservey, D. Mueller, J. Schivell, E. Silver, S. Suckewer, J. Timberlake, S. Von Goeler
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 1226–1229 (1982)
https://doi.org/10.1116/1.571526
Published: April 1982
View article titled, Changes in tokamak plasma properties during impurity injection
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Journal Articles

Theoretical studies of the decomposition of methanol on Ni(100)

T. H. Upton
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 527–531 (1982)
https://doi.org/10.1116/1.571423
Published: March 1982
View article titled, Theoretical studies of the decomposition of methanol on Ni(100)
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Journal Articles

Change in surface polarizability of Mo(100) with oxidation measured by XPS of physisorbed xenon

R. M. Henry, T. A. B. Fryberger, P. C. Stair
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 818–822 (1982)
https://doi.org/10.1116/1.571493
Published: March 1982
View article titled, Change in surface polarizability of Mo(100) with oxidation measured by XPS of physisorbed xenon
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Journal Articles

Determination of the InAs–GaAs(100) heterojunction band discontinuities by x‐ray photoelectron spectroscopy (XPS)

S. P. Kowalczyk, W. J. Schaffer, E. A. Kraut, R. W. Grant
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 705–708 (1982)
https://doi.org/10.1116/1.571635
Published: March 1982
View article titled, Determination of the InAs–GaAs(100) heterojunction band discontinuities by x‐ray photoelectron spectroscopy (XPS)
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Journal Articles

Photoemission and other photoexcitations as probes of the solid–liquid interface

J. C. Buchholz
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 638–642 (1982)
https://doi.org/10.1116/1.571615
Published: March 1982
View article titled, Photoemission and other photoexcitations as probes of the solid–liquid interface
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Journal Articles

Localized Auger final states in linear alkanes and polyethylene

J. A. Kelber, D. R. Jennison
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 848–851 (1982)
https://doi.org/10.1116/1.571501
Published: March 1982
View article titled, Localized Auger final states in linear alkanes and polyethylene
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Journal Articles

Electron energy loss spectroscopy of adsorbed atoms

J. E. Black, Talat S. Rahman, D. L. Mills
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 20, 567–573 (1982)
https://doi.org/10.1116/1.571390
Published: March 1982
View article titled, Electron energy loss spectroscopy of adsorbed atoms
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Journal Articles

Chlorine chemisorption on Si(111), Ge(111), and GaAs(110) surfaces

K. Zhang, L. Yeh
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 628–630 (1981)
https://doi.org/10.1116/1.571075
Published: September 1981
View article titled, Chlorine chemisorption on Si(111), Ge(111), and GaAs(110) surfaces
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Journal Articles

Oxidation of silicon surfaces

A. Redondo, W. A. Goddard, III, C. A. Swarts, T. C. McGill
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 498–501 (1981)
https://doi.org/10.1116/1.571046
Published: September 1981
View article titled, Oxidation of silicon surfaces
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Journal Articles

Initial stage of formation of a metal‐semiconductor interface: Al on GaAs(110)

A. Zunger
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 690–692 (1981)
https://doi.org/10.1116/1.571086
Published: September 1981
View article titled, Initial stage of formation of a metal‐semiconductor interface: Al on GaAs(110)
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Journal Articles

Electrical properties of SiO2 and Si3N4 dielectric layers on InP

L. G. Meiners
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 373–379 (1981)
https://doi.org/10.1116/1.571066
Published: September 1981
View article titled, Electrical properties of SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub> dielectric layers on InP
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Journal Articles

Origin of U‐shaped background density of interface states at nonlattice matched semiconductor interfaces

J. Singh, A. Madhukar
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 19, 437–442 (1981)
https://doi.org/10.1116/1.571034
Published: September 1981
View article titled, Origin of U‐shaped background density of interface states at nonlattice matched semiconductor interfaces
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