Gallium–Phosphide Films Deposited by Sputtering | Citedby Results | Journal of Vacuum Science and Technology | AIP Publishing

Skip to Main Content

Skip Nav Destination

Gallium–Phosphide Films Deposited by Sputtering

J. Vac. Sci. Technol. 7, 110–114 (1970)

This article has been cited by the following articles in journals that are participating in CrossRef Cited-by Linking.

Reactive phosphine combinatorial co-sputtering of cation disordered ZnGeP2 films

Rekha R. Schnepf
Andrea Crovetto
Prashun Gorai
Anna Park
Megan Holtz
Karen N. Heinselman
Sage R. Bauers
M. Brooks Tellekamp
Andriy Zakutayev
Ann L. Greenaway
Eric S. Toberer
Adele C. Tamboli

Journal of Materials Chemistry C 10, 870 (2022)

Influence of Process Parameters on the RF Sputtered GaP Thin Films

D.A. Mota
G. Hema Chandra
J. Ventura
A. Guedes
J. Pérez de la Cruz

Journal of Materials Science & Technology 29, 821 (2013)

Transport and optical properties of a-GaP prepared at different substrate temperatures

N Elgun
E A Davis

Journal of Physics: Condensed Matter 6, 779 (1994)

GaP/Si heteroepitaxy by complex ion beam sputtering

F. Ishizuka
H. Yoshizawa
T. Itoh

Journal of Applied Physics 63, 2091 (1988)

Epitaxial crystal growth by sputter deposition: Applications to semiconductors. Part I

Joseph E. Greene

Critical Reviews in Solid State and Materials Sciences 11, 47 (1983)

Epitaxial crystal growth by sputter deposition: Applications to semiconductors. Part 2

J. E. Greene

Critical Reviews in Solid State and Materials Sciences 11, 189 (1983)

R.f. sputtering of gallium phosphide thin films

K. Starosta
J. Zelinka
D. Berková
J. Kohout

Thin Solid Films 61, 241 (1979)