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Journal Articles

Phosphorus deactivation by hydrogen on hot carrier stressed high-voltage N-channel field effect transistor CMOS device demonstrated by scanning capacitance microscopy imaging

Jochonia Nxumalo, Wang Yun-Yu (王允愈), Mike Smith, You Lin (尤林), David Fillmore, Matthew Gerber, Jin Qiang (金强)
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 042203 (2023)
https://doi.org/10.1116/5.0147443
Published: June 2023
View article titled, Phosphorus deactivation by hydrogen on hot carrier stressed high-voltage N-channel field effect transistor CMOS device demonstrated by scanning capacitance microscopy imaging
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Journal Articles

Ohmic contact structures on β-Ga2O3 with n+ β-Ga2O3 pulsed laser deposition layers

Elizabeth V. Favela, Hyung Min Jeon, Kevin D. Leedy, Kun Zhang, Szu-Wei Tung, Francelia Sanchez Escobar, C. V. Ramana, Lisa M. Porter
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 032205 (2023)
https://doi.org/10.1116/6.0002620
Published: May 2023
View article titled, Ohmic contact structures on <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> with n+ <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> pulsed laser deposition layers
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Includes: Supplementary data
Journal Articles

Secondary ion mass spectrometry quantification: Do you remember when a factor of 2 was good enough?

Charles W. Magee, Temel H. Buyuklimanli
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 030803 (2023)
https://doi.org/10.1116/6.0002466
Published: April 2023
View article titled, Secondary ion mass spectrometry quantification: Do you remember when a factor of 2 was good enough?
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Journal Articles

Selectively patterned Mg-doped GaN by SiNx-driven hydrogen injection

Hyun-Soo Lee, Mohammad Wahidur Rahman, Darpan Verma, Violet M. Poole, Roberto C. Myers, Matthew D. McCluskey, Siddharth Rajan
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 062201 (2022)
https://doi.org/10.1116/6.0002029
Published: October 2022
View article titled, Selectively patterned Mg-doped GaN by SiN<sub>x</sub>-driven hydrogen injection
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Journal Articles

Study of simulations of double graded InGaN solar cell structures

Mirsaeid Sarollahi, Mohammad Zamani-Alavijeh, Rohith Allaparthi, Manal A. Aldawsari, Malak Refaei, Reem Alhelais, Md Helal Uddin Maruf, Yuriy I. Mazur, Morgan E. Ware
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 042203 (2022)
https://doi.org/10.1116/6.0001841
Published: June 2022
View article titled, Study of simulations of double graded InGaN solar cell structures
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Journal Articles

Silicon field emitters fabricated by dicing-saw and wet-chemical-etching

Simon Edler, Andreas Schels, Josef Biba, Walter Hansch, Michael Bachmann, Felix Düsberg, Marinus Werber, Christoph Langer, Manuel Meyer, David von Bergen, Andreas Pahlke
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 39, 013205 (2021)
https://doi.org/10.1116/6.0000466
Published: January 2021
View article titled, Silicon field emitters fabricated by dicing-saw and wet-chemical-etching
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Journal Articles

Detection of some amino acids with modulation-doped and surface-nanoengineered GaAs Schottky P-I-N diodes

Scilight
Tamador Alkhidir, Maguy Abi Jaoude, Deborah L. Gater, Christopher Alpha, A. F. Isakovic
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 054002 (2020)
https://doi.org/10.1116/6.0000186
Published: August 2020
View article titled, Detection of some amino acids with modulation-doped and surface-nanoengineered GaAs Schottky P-I-N diodes
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Journal Articles

Analysis of useful ion yield for Si in GaN by secondary ion mass spectrometry

M. K. Indika Senevirathna, Mark Vernon, Graham A. Cooke, Garnett B. Cross, Alexander Kozhanov, Michael D. Williams
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 044002 (2020)
https://doi.org/10.1116/6.0000138
Published: May 2020
View article titled, Analysis of useful ion yield for Si in GaN by secondary ion mass spectrometry
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Journal Articles

High temperature operation to 500 °C of AlGaN graded polarization-doped field-effect transistors

Patrick H. Carey, IV, Fan Ren, Andrew M. Armstrong, Brianna A. Klein, Andrew A. Allerman, Erica A. Douglas, Albert G. Baca, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 033202 (2020)
https://doi.org/10.1116/1.5135590
Published: April 2020
View article titled, High temperature operation to 500 °C of AlGaN graded polarization-doped field-effect transistors
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Journal Articles

Influence of specific forming algorithms on the device-to-device variability of memristive Al-doped HfO2 arrays

Mamathamba K. Mahadevaiah, Eduardo Perez, Christian Wenger
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 013201 (2020)
https://doi.org/10.1116/1.5126936
Published: December 2019
View article titled, Influence of specific forming algorithms on the device-to-device variability of memristive Al-doped HfO<sub>2</sub> arrays
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Journal Articles

Ultraviolet light-emitting diode arrays using Ga-doped ZnO as current spreading layer

Wu-Liang Bi, Wei-Hao Lee, Hsin-Hao Yeh, Meng-Chyi Wu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 010601 (2020)
https://doi.org/10.1116/1.5127064
Published: December 2019
View article titled, Ultraviolet light-emitting diode arrays using Ga-doped ZnO as current spreading layer
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Journal Articles

Structural, morphologic and optical properties of graphene doped binary TiO2–P2O5 nanocomposite

L. Baschir, A. M. Iordache, D. Savastru, A. A. Popescu, I. C. Vasiliu, M. Elisa, C. Obreja, M. Filipescu, R. Trusca, M. Stchakovsky, S. Iordache
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 061208 (2019)
https://doi.org/10.1116/1.5122897
Published: November 2019
View article titled, Structural, morphologic and optical properties of graphene doped binary TiO<sub>2</sub>–P<sub>2</sub>O<sub>5</sub> nanocomposite
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Journal Articles

Luminescence properties and cathodoluminescence degradation of Bi doped SrO powder

Mogahid H. M. Abdelrehman, Robin E. Kroon, Abdelrhman Yousif, Hassan A. A. Seed Ahmed, Hendrik C. Swart
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 011206 (2019)
https://doi.org/10.1116/1.5075492
Published: January 2019
View article titled, Luminescence properties and cathodoluminescence degradation of Bi doped SrO powder
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Journal Articles

Silver-doped tin oxide for electrical property enhancement in p-type channel thin film transistor

An Hoang-Thuy Nguyen, Manh-Cuong Nguyen, Hyungmin Ji, Jonggyu Cheon, Kyoungmun Yu, Jinhyun Kim, Sangwoo Kim, Seongyong Cho, Rino Choi, Hoai Phuong Pham, Quang Trung Tran
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 062203 (2018)
https://doi.org/10.1116/1.5051419
Published: December 2018
View article titled, Silver-doped tin oxide for electrical property enhancement in p-type channel thin film transistor
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Journal Articles

Solid-source doping by using phosphosilicate glass into p-type bulk Si (100) substrate: Role of the capping SiO2 barrier

Yoshiaki Kikuchi, Antony Peter, Bartlomiej Jan Pawlak, An De Keersgieter, Pierre Eyben, Naoto Horiguchi, Anda Mocuta
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 061205 (2018)
https://doi.org/10.1116/1.5053455
Published: October 2018
View article titled, Solid-source doping by using phosphosilicate glass into p-type bulk Si (100) substrate: Role of the capping SiO<sub>2</sub> barrier
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Journal Articles

Characterization and electrochemical behavior of spherical boron-doped diamond film electrode

Fan Li, Li Gou
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 052903 (2018)
https://doi.org/10.1116/1.5041321
Published: September 2018
View article titled, Characterization and electrochemical behavior of spherical boron-doped diamond film electrode
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Journal Articles

Eighteen mega-electron-volt alpha-particle damage in homoepitaxial β-Ga2O3 Schottky rectifiers

Editor’s Pick
Jiancheng Yang, Chaker Fares, Yu Guan, F. Ren, S. J. Pearton, Jinho Bae, Jihyun Kim, Akito Kuramata
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 031205 (2018)
https://doi.org/10.1116/1.5027613
Published: May 2018
View article titled, Eighteen mega-electron-volt alpha-particle damage in homoepitaxial β-Ga<sub>2</sub>O<sub>3</sub> Schottky rectifiers
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Journal Articles

Bevel depth profiling by high-spatial-resolution sputtered neutral mass spectrometry with laser postionization

Takahiro Kashiwagi, Satoru Nagashima, Takeharu Ishikawa, Akio Takano, Suet-Yi Liu, Hisataka Takenaka, Katsumi Endo, Masaaki Fujii
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 03F133 (2018)
https://doi.org/10.1116/1.5019692
Published: May 2018
View article titled, Bevel depth profiling by high-spatial-resolution sputtered neutral mass spectrometry with laser postionization
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Journal Articles

Effects of nanowire size and geometry on silicon nanowire array thin film solar cells

Martin Müller, Martin Ledinský, Jan Kočka, Antonín Fejfar, Jiří Červenka
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 011401 (2018)
https://doi.org/10.1116/1.5010411
Published: January 2018
View article titled, Effects of nanowire size and geometry on silicon nanowire array thin film solar cells
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Journal Articles

Fabrication of prebent MoS2 biosensors on flexible substrates

Editor’s Pick
Byunghoon Ryu, Erika Yang, Younggeun Park, Katsuo Kurabayashi, Xiaogan Liang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 06G805 (2017)
https://doi.org/10.1116/1.4991749
Published: October 2017
View article titled, Fabrication of prebent MoS<sub>2</sub> biosensors on flexible substrates
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