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Journal Articles

Formation and morphological evolution of InAs quantum dots grown by chemical beam epitaxy

Jihene Zribi, Denis Morris, Richard Arès
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 30, 051207 (2012)
https://doi.org/10.1116/1.4746072
Published: August 2012
View article titled, Formation and morphological evolution of InAs quantum dots grown by chemical beam epitaxy
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Journal Articles

High quality m-plane GaN grown under nitrogen-rich conditions by plasma assisted molecular beam epitaxy

Marta Sawicka, Anna Feduniewicz-Żmuda, Henryk Turski, Marcin Siekacz, Szymon Grzanka, Marcin Kryśko, Igor Dzięcielewski, Izabella Grzegory, Czesław Skierbiszewski
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 03C135 (2011)
https://doi.org/10.1116/1.3589228
Published: May 2011
View article titled, High quality m-plane GaN grown under nitrogen-rich conditions by plasma assisted molecular beam epitaxy
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Journal Articles

Modulated beam mass spectrometer studies of a Mark V Veeco cracker

R. P. Campion, C. T. Foxon, R. C. Bresnahan
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, C3F1–C3F4 (2010)
https://doi.org/10.1116/1.3368573
Published: March 2010
View article titled, Modulated beam mass spectrometer studies of a Mark V Veeco cracker
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Journal Articles

Real time optical monitoring of molecular beam epitaxy of InN on SiC substrates

Maria Losurdo, Tong-Ho Kim, Soojeong Choi, Pae Wu, Maria M. Giangregorio, Giovanni Bruno, April Brown
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 25, 1014–1018 (2007)
https://doi.org/10.1116/1.2737433
Published: May 2007
View article titled, Real time optical monitoring of molecular beam epitaxy of InN on SiC substrates
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Journal Articles

Real-time sensing and metrology for atomic layer deposition processes and manufacturing

Laurent Henn-Lecordier, Wei Lei, Mariano Anderle, Gary W. Rubloff
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 25, 130–139 (2007)
https://doi.org/10.1116/1.2429672
Published: January 2007
View article titled, Real-time sensing and metrology for atomic layer deposition processes and manufacturing
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Journal Articles

Growth kinetics and theoretical modeling of selective molecular beam epitaxy for growth of GaAs nanowires on nonplanar (001) and (111)B substrates

Taketomo Sato, Isao Tamai, Hideki Hasegawa
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 23, 1706–1713 (2005)
https://doi.org/10.1116/1.1949222
Published: July 2005
View article titled, Growth kinetics and theoretical modeling of selective molecular beam epitaxy for growth of GaAs nanowires on nonplanar (001) and (111)B substrates
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Journal Articles

Growth kinetics and modeling of selective molecular beam epitaxial growth of GaAs ridge quantum wires on pre-patterned nonplanar substrates

Taketomo Sato, Isao Tamai, Hideki Hasegawa
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 22, 2266–2274 (2004)
https://doi.org/10.1116/1.1773841
Published: August 2004
View article titled, Growth kinetics and modeling of selective molecular beam epitaxial growth of GaAs ridge quantum wires on pre-patterned nonplanar substrates
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Journal Articles

Effects of temperature and HCl flow on the SiGe growth kinetics in reduced pressure–chemical vapor deposition

J. M. Hartmann, V. Loup, G. Rolland, M. N. Séméria
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 21, 2524–2529 (2003)
https://doi.org/10.1116/1.1623508
Published: November 2003
View article titled, Effects of temperature and HCl flow on the SiGe growth kinetics in reduced pressure–chemical vapor deposition
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Journal Articles

Growth of germanium quantum dots on different dielectric substrates by chemical-vapor deposition

Dong-Won Kim, Young-Hee Kim, Xiangdong Chen, Choong-Ho Lee, Seoung-Chel Song, Freek E. Prins, Dim-Lee Kwong, Sanjay Banerjee
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 19, 1104–1108 (2001)
https://doi.org/10.1116/1.1387453
Published: July 2001
View article titled, Growth of germanium quantum dots on different dielectric substrates by chemical-vapor deposition
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Journal Articles

Controlled ordering and positioning of InAs self-assembled quantum dots

H. Lee, J. A. Johnson, J. S. Speck, P. M. Petroff
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 18, 2193–2196 (2000)
https://doi.org/10.1116/1.1306281
Published: July 2000
View article titled, Controlled ordering and positioning of InAs self-assembled quantum dots
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Journal Articles

Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy

Huajie Chen, R. M. Feenstra, J. E. Northrup, T. Zywietz, J. Neugebauer, D. W. Greve
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 18, 2284–2289 (2000)
https://doi.org/10.1116/1.1306296
Published: July 2000
View article titled, Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy
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Journal Articles

Growth characterization of rapid thermal oxides

W. H. Lai, M. F. Li, L. Chan, T. C. Chua
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 17, 2226–2238 (1999)
https://doi.org/10.1116/1.590898
Published: September 1999
View article titled, Growth characterization of rapid thermal oxides
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Journal Articles

Growth of silicon oxide on hydrogenated silicon during lithography with an atomic force microscope

F. Marchi, V. Bouchiat, H. Dallaporta, V. Safarov, D. Tonneau, P. Doppelt
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 16, 2952–2956 (1998)
https://doi.org/10.1116/1.590325
Published: November 1998
View article titled, Growth of silicon oxide on hydrogenated silicon during lithography with an atomic force microscope
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Journal Articles

In situ investigation of the passivation of Si and Ge by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiO2

Y. Wang, Y. Z. Hu, E. A. Irene
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 14, 1687–1696 (1996)
https://doi.org/10.1116/1.589211
Published: May 1996
View article titled, <em>In</em> <em>situ</em> investigation of the passivation of Si and Ge by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiO<sub>2</sub>
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Journal Articles

Strain‐modulated epitaxy: Modification of growth kinetics via patterned, compliant substrates

Carrie Carter‐Coman, April S. Brown, Robert Bicknell‐Tassius, Nan Marie Jokerst, Françoise Fournier, Douglas E. Dawson
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 14, 2170–2174 (1996)
https://doi.org/10.1116/1.588892
Published: May 1996
View article titled, Strain‐modulated epitaxy: Modification of growth kinetics via patterned, compliant substrates
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Journal Articles

Molecular‐beam epitaxial growth as a self‐organized critical phenomenon

S. Das Sarma
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 10, 1695–1703 (1992)
https://doi.org/10.1116/1.586225
Published: July 1992
View article titled, Molecular‐beam epitaxial growth as a self‐organized critical phenomenon
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Journal Articles

Study of palladium silicide formed using a focused ion beam machine

Sridhar Balakrishnan, John C. Corelli, Krishna Rajan
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 9, 2687–2691 (1991)
https://doi.org/10.1116/1.585673
Published: September 1991
View article titled, Study of palladium silicide formed using a focused ion beam machine
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Journal Articles

The effect of inhibited growth kinetics on GaInAs and AlInAs alloy and interface quality

A. S. Brown, M. J. Delaney, J. Singh
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 7, 384–387 (1989)
https://doi.org/10.1116/1.584756
Published: March 1989
View article titled, The effect of inhibited growth kinetics on GaInAs and AlInAs alloy and interface quality
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Journal Articles

Molecular‐beam epitaxy growth of tilted GaAs/AlAs superlattices by deposition of fractional monolayers on vicinal (001) substrates

J. M. Gaines, P. M. Petroff, H. Kroemer, R. J. Simes, R. S. Geels, J. H. English
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 6, 1378–1381 (1988)
https://doi.org/10.1116/1.584225
Published: July 1988
View article titled, Molecular‐beam epitaxy growth of tilted GaAs/AlAs superlattices by deposition of fractional monolayers on vicinal (001) substrates
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Journal Articles

Characterization of Al0.25Ga0.75As grown by molecular‐beam epitaxy

M. J. Lin, E. C. Larkins, Y. C. Pao, D. Liu, G. Yoffe, T. K. Ma, J. S. Harris, Jr.
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 6, 631–635 (1988)
https://doi.org/10.1116/1.584418
Published: March 1988
View article titled, Characterization of Al<sub>0.25</sub>Ga<sub>0.75</sub>As grown by molecular‐beam epitaxy
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