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Journal Articles
Quantum efficiency characteristics of low-threading-dislocation-density InGaN photocathode grown on GaN substrate
Available to Purchase
J. Vac. Sci. Technol. B 43, 032202 (2025)
Published: March 2025
Journal Articles
Dependence of electron emission current density on excitation power density from Cs/O-activated negative electron affinity InGaN photocathode
Available to Purchase
J. Vac. Sci. Technol. B 40, 062202 (2022)
Published: October 2022
Journal Articles
Evolution of photoelectron spectra at thermal reduction of graphene oxide
Available to PurchaseViktor P. Afanas'ev, Grigorii S. Bocharov, Alexander V. Eletskii, Olga Yu. Ridzel, Pavel S. Kaplya, Martin Köppen
J. Vac. Sci. Technol. B 35, 041804 (2017)
Published: July 2017
Journal Articles
Enhanced photocathode performance through optimization of film thickness and substrate
Available to Purchase
J. Vac. Sci. Technol. B 35, 022202 (2017)
Published: February 2017
Journal Articles
Density functional theory studies on Cs activation mechanism between GaN (0001) and Al0.25Ga0.75N (0001) surface
Available to Purchase
J. Vac. Sci. Technol. B 33, 051214 (2015)
Published: September 2015
Journal Articles
Size dependent enhancement of photoelectron emission quantum efficiencies from magnesium dots
Available to Purchase
J. Vac. Sci. Technol. B 30, 06F605 (2012)
Published: November 2012
Journal Articles
Single molecule measurements with photoelectron emission microscopy
Available to Purchase
J. Vac. Sci. Technol. B 26, 1461–1465 (2008)
Published: August 2008
Journal Articles
Tribochemistry and material transfer for the ultrananocrystalline diamond-silicon nitride interface revealed by x-ray photoelectron emission spectromicroscopy
Available to PurchaseDavid S. Grierson, Anirudha V. Sumant, Andrew R. Konicek, Mike Abrecht, J. Birrell, Orlando Auciello, John A. Carlisle, Thomas W. Scharf, Michael T. Dugger, P. U. P. A. Gilbert, Robert W. Carpick
J. Vac. Sci. Technol. B 25, 1700–1705 (2007)
Published: September 2007
Journal Articles
Photoelectron emission studies in CsBr at 257 nm
Available to Purchase
J. Vac. Sci. Technol. B 24, 2886–2891 (2006)
Published: November 2006
Journal Articles
Structural and electrical investigation of high temperature annealed As-implanted Si crystals
Available to PurchaseC. Bocchi, L. Felisari, A. Catellani, G. Cicero, F. Germini, E. Gombia, R. Mosca, L. Nasi, E. Kh. Mukhamedzhanov, M. A. Chuev, V. Privitera, M. Camalleri, D. Calì
J. Vac. Sci. Technol. B 23, 1504–1514 (2005)
Published: July 2005
Journal Articles
Recent developments in deep x-ray lithography
Available to Purchase
J. Vac. Sci. Technol. B 16, 3526–3534 (1998)
Published: November 1998
Journal Articles
Influence of the gas mixture on the reactive ion etching of InP in CH 4 -H2 plasmas
Available to Purchase
J. Vac. Sci. Technol. B 15, 1733–1740 (1997)
Published: September 1997
Journal Articles
Imaging of ferromagnetic domains using photoelectrons: Photoelectron emission microscopy of neodymium‐iron‐boron (Nd2Fe14B)
Available to Purchase
J. Vac. Sci. Technol. B 14, 3126–3130 (1996)
Published: July 1996
Journal Articles
Momentum‐space images of surface dimers on GaAs(001)‐(2×4) by high‐energy Auger and x‐ray photoelectron diffraction
Available to Purchase
J. Vac. Sci. Technol. B 10, 2092–2098 (1992)
Published: July 1992
Journal Articles
Angle‐resolved photoemission study of GaAs(100) surfaces grown by molecular beam epitaxy
Available to Purchase
J. Vac. Sci. Technol. B 1, 736–740 (1983)
Published: July 1983