1-20 of 46
Phonon scattering
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Effects of working pressure during magnetron sputtering on thermoelectric performance of flexible p-type Bi0.5Sb1.5Te3 thin films

Ding Hu, Shaojun Liang, Yichun He, Rensheng Zhang, Song Yue
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 032212 (2024)
https://doi.org/10.1116/6.0003631
Published: May 2024
View article titled, Effects of working pressure during magnetron sputtering on thermoelectric performance of flexible p-type Bi<sub>0.5</sub>Sb<sub>1.5</sub>Te<sub>3</sub> thin films
Open the PDF for Effects of working pressure during magnetron sputtering on thermoelectric performance of flexible p-type Bi<sub>0.5</sub>Sb<sub>1.5</sub>Te<sub>3</sub> thin films in another window
Includes: Supplementary data
Journal Articles

Doping engineering: Next step toward room temperature performance of terahertz quantum cascade lasers

Nathalie Lander Gower, Shiran Levy, Silvia Piperno, Sadhvikas J. Addamane, John L. Reno, Asaf Albo
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 010801 (2024)
https://doi.org/10.1116/6.0003160
Published: January 2024
View article titled, Doping engineering: Next step toward room temperature performance of terahertz quantum cascade lasers
Open the PDF for Doping engineering: Next step toward room temperature performance of terahertz quantum cascade lasers in another window
Journal Articles

Review on remote phonon scattering in transistors with metal-oxide-semiconductor structures adopting high-k gate dielectrics

Yuan Xiao Ma, Hui Su, Wing Man Tang, Pui To Lai
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 060804 (2023)
https://doi.org/10.1116/5.0156557
Published: November 2023
View article titled, Review on remote phonon scattering in transistors with metal-oxide-semiconductor structures adopting high-k gate dielectrics
Open the PDF for Review on remote phonon scattering in transistors with metal-oxide-semiconductor structures adopting high-k gate dielectrics in another window
Journal Articles

Effect of proton irradiation on the mobility of two-dimensional electron in AlGaN/AlN/GaN high electron mobility transistors at low temperature

Jinjin Tang, Guipeng Liu, Guijuan Zhao, Shu’an Xing, Salamat Ali Malik
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 023202 (2020)
https://doi.org/10.1116/1.5134840
Published: January 2020
View article titled, Effect of proton irradiation on the mobility of two-dimensional electron in AlGaN/AlN/GaN high electron mobility transistors at low temperature
Open the PDF for Effect of proton irradiation on the mobility of two-dimensional electron in AlGaN/AlN/GaN high electron mobility transistors at low temperature in another window
Journal Articles

Effect of barrier thickness on structural, optical, and spectral behaviors of vertically strain coupled InAs/GaAs quantum dot infrared photodetectors

Hemant Ghadi, Akshay Agarwal, Sourav Adhikary, Binita Tongbram, Arjun Mandal, Subhananda Chakrabarti, Naresh Babu Pendyala, Sachin Prajapati, Ashwani Kumar
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 051208 (2014)
https://doi.org/10.1116/1.4894461
Published: September 2014
View article titled, Effect of barrier thickness on structural, optical, and spectral behaviors of vertically strain coupled InAs/GaAs quantum dot infrared photodetectors
Open the PDF for Effect of barrier thickness on structural, optical, and spectral behaviors of vertically strain coupled InAs/GaAs quantum dot infrared photodetectors in another window
Journal Articles

Thermal coefficient of resistivity of ultrathin Ag films deposited on Cu for applications in emerging interconnect systems

Elroy A. Tatem, Alain E. Kaloyeros, Eric T. Eisenbraun
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 031801 (2014)
https://doi.org/10.1116/1.4868718
Published: March 2014
View article titled, Thermal coefficient of resistivity of ultrathin Ag films deposited on Cu for applications in emerging interconnect systems
Open the PDF for Thermal coefficient of resistivity of ultrathin Ag films deposited on Cu for applications in emerging interconnect systems in another window
Journal Articles

Performance improvement of GaN-based ultraviolet metal–semiconductor–metal photodetectors using chlorination surface treatment

Hsin-Ying Lee, De-En Lu, Ching-Ting Lee
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 30, 031211 (2012)
https://doi.org/10.1116/1.4711215
Published: May 2012
View article titled, Performance improvement of GaN-based ultraviolet metal–semiconductor–metal photodetectors using chlorination surface treatment
Open the PDF for Performance improvement of GaN-based ultraviolet metal–semiconductor–metal photodetectors using chlorination surface treatment in another window
Journal Articles

Reduction of spin-flip scattering in metallic nonlocal spin valves

H. Zou, X. J. Wang, Y. Ji
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, 1314–1317 (2010)
https://doi.org/10.1116/1.3514204
Published: November 2010
View article titled, Reduction of spin-flip scattering in metallic nonlocal spin valves
Open the PDF for Reduction of spin-flip scattering in metallic nonlocal spin valves in another window
Journal Articles

Study of transport properties in graphene monolayer flakes on SiO 2 substrates

J. M. Tirado, D. Nezich, X. Zhao, J. W. Chung, J. Kong, T. Palacios
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, C6D11–C6D14 (2010)
https://doi.org/10.1116/1.3516649
Published: November 2010
View article titled, Study of transport properties in graphene monolayer flakes on SiO 2 substrates
Open the PDF for Study of transport properties in graphene monolayer flakes on SiO 2 substrates in another window
Journal Articles

Internal damping for noncontact atomic force microscopy cantilevers

Fredy Zypman
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, C4E24–C4E27 (2010)
https://doi.org/10.1116/1.3374736
Published: May 2010
View article titled, Internal damping for noncontact atomic force microscopy cantilevers
Open the PDF for Internal damping for noncontact atomic force microscopy cantilevers in another window
Journal Articles

Mobility and remote scattering in buried InGaAs quantum well channels with high- k gate oxide

P. Nagaiah, V. Tokranov, M. Yakimov, S. Koveshnikov, S. Oktyabrsky, D. Veksler, W. Tsai, G. Bersuker
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, C3H5–C3H9 (2010)
https://doi.org/10.1116/1.3360903
Published: April 2010
View article titled, Mobility and remote scattering in buried InGaAs quantum well channels with high- k gate oxide
Open the PDF for Mobility and remote scattering in buried InGaAs quantum well channels with high- k gate oxide in another window
Journal Articles

Detailed simulation study of embedded SiGe and Si:C source/drain stressors in nanoscaled silicon on insulator metal oxide semiconductor field effect transistors

Stefan Flachowsky, Ralf Illgen, Tom Herrmann, Wilfried Klix, Roland Stenzel, Ina Ostermay, Andreas Naumann, Andy Wei, Jan Höntschel, Manfred Horstmann
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, C1G12–C1G17 (2010)
https://doi.org/10.1116/1.3258631
Published: March 2010
View article titled, Detailed simulation study of embedded SiGe and Si:C source/drain stressors in nanoscaled silicon on insulator metal oxide semiconductor field effect transistors
Open the PDF for Detailed simulation study of embedded SiGe and Si:C source/drain stressors in nanoscaled silicon on insulator metal oxide semiconductor field effect transistors in another window
Journal Articles

Quantitative mobility spectrum analysis of carriers in GaSb/InAs/GaSb superlattice

T. V. Chandrasekhar Rao, J. Antoszewski, J. B. Rodriguez, E. Plis, S. Krishna, L. Faraone
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 1081–1083 (2008)
https://doi.org/10.1116/1.2839641
Published: May 2008
View article titled, Quantitative mobility spectrum analysis of carriers in GaSb/InAs/GaSb superlattice
Open the PDF for Quantitative mobility spectrum analysis of carriers in GaSb/InAs/GaSb superlattice in another window
Journal Articles

Effects of surface plasmon resonant scattering on the power conversion efficiency of organic thin-film solar cells

Y. C. Chang, F. Y. Chou, P. H. Yeh, H. W. Chen, S.-H. Chang, Y. C. Lan, T. F. Guo, T. C. Tsai, C. T. Lee
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 25, 1899–1902 (2007)
https://doi.org/10.1116/1.2806959
Published: November 2007
View article titled, Effects of surface plasmon resonant scattering on the power conversion efficiency of organic thin-film solar cells
Open the PDF for Effects of surface plasmon resonant scattering on the power conversion efficiency of organic thin-film solar cells in another window
Journal Articles

Effect of Al composition on filtering of threading dislocations by Al x In 1 − x Sb ∕ Al y In 1 − y Sb heterostructures grown on GaAs (001)

M. Edirisooriya, T. D. Mishima, M. B. Santos
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 25, 1063–1065 (2007)
https://doi.org/10.1116/1.2740271
Published: May 2007
View article titled, Effect of Al composition on filtering of threading dislocations by Al x In 1 − x Sb ∕ Al y In 1 − y Sb heterostructures grown on GaAs (001)
Open the PDF for Effect of Al composition on filtering of threading dislocations by Al x In 1 − x Sb ∕ Al y In 1 − y Sb heterostructures grown on GaAs (001) in another window
Journal Articles

Ballistic recovery in III-V nanowire transistors

M. J. Gilbert, S. K. Banerjee
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 25, 189–193 (2007)
https://doi.org/10.1116/1.2409987
Published: January 2007
View article titled, Ballistic recovery in III-V nanowire transistors
Open the PDF for Ballistic recovery in III-V nanowire transistors in another window
Journal Articles

Surface roughness exacerbated performance degradation in silicon nanowire transistors

D. Basu, M. J. Gilbert, S. K. Banerjee
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 2424–2428 (2006)
https://doi.org/10.1116/1.2353846
Published: September 2006
View article titled, Surface roughness exacerbated performance degradation in silicon nanowire transistors
Open the PDF for Surface roughness exacerbated performance degradation in silicon nanowire transistors in another window
Journal Articles

Amber GaNP -based light-emitting diodes directly grown on GaP ( 100 ) substrates

V. A. Odnoblyudov, C. W. Tu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 2202–2204 (2006)
https://doi.org/10.1116/1.2236121
Published: September 2006
View article titled, Amber GaNP -based light-emitting diodes directly grown on GaP ( 100 ) substrates
Open the PDF for Amber GaNP -based light-emitting diodes directly grown on GaP ( 100 ) substrates in another window
Journal Articles

Electrical conductivity of high aspect ratio trenches in chemical-vapor deposition W technology

Ivan P. Ivanov, Indradeep Sen, Peter Keswick
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 523–533 (2006)
https://doi.org/10.1116/1.2166859
Published: February 2006
View article titled, Electrical conductivity of high aspect ratio trenches in chemical-vapor deposition W technology
Open the PDF for Electrical conductivity of high aspect ratio trenches in chemical-vapor deposition W technology in another window
Journal Articles

Electrical resistivity of polycrystalline Cu interconnects with nano-scale linewidth

Masahiro Shimada, Miki Moriyama, Kazuhiro Ito, Susumu Tsukimoto, Masanori Murakami
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 190–194 (2006)
https://doi.org/10.1116/1.2151910
Published: January 2006
View article titled, Electrical resistivity of polycrystalline Cu interconnects with nano-scale linewidth
Open the PDF for Electrical resistivity of polycrystalline Cu interconnects with nano-scale linewidth in another window