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Journal Articles

Emission enhancement of GaN field emitter arrays in an N2 environment

Reza Farsad Asadi, Tao Zheng, Pao-Chuan Shih, Tomás Palacios, Akintunde I. Akinwande, Bruce Gnade
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 044004 (2024)
https://doi.org/10.1116/6.0003704
Published: July 2024
View article titled, Emission enhancement of GaN field emitter arrays in an N<sub>2</sub> environment
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Journal Articles

Effect of water vapor desorption on the performance of gallium nitride field emitter array

Ranajoy Bhattacharya, Pao-Chuan Shih, Tomás Palacios, Jim Browning
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 013202 (2024)
https://doi.org/10.1116/6.0003187
Published: January 2024
View article titled, Effect of water vapor desorption on the performance of gallium nitride field emitter array
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Journal Articles

Influence of gate material and diamond surface termination on current conduction in metal/Al2O3/diamond capacitors

Satoshi Okubo, Daisuke Matsumura, Hiroshi Kawarada, Atsushi Hiraiwa
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 012202 (2024)
https://doi.org/10.1116/6.0003272
Published: January 2024
View article titled, Influence of gate material and diamond surface termination on current conduction in metal/Al<sub>2</sub>O<sub>3</sub>/diamond capacitors
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Journal Articles

Simulation of a multichannel vacuum transistor with high cut-off frequency

Zhihua Shen, Xiao Wang, Bin Ge, Shengli Wu, Jinshou Tian
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 043203 (2023)
https://doi.org/10.1116/6.0002675
Published: July 2023
View article titled, Simulation of a multichannel vacuum transistor with high cut-off frequency
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Journal Articles

Effect of praseodymium coating on electron emission from a nanoscale gold field emitter array

L. B. De Rose, D. H. Catanzaro, C. Choi, A. Scherer
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 042801 (2023)
https://doi.org/10.1116/6.0002700
Published: May 2023
View article titled, Effect of praseodymium coating on electron emission from a nanoscale gold field emitter array
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Journal Articles

Gap distance dependence on field emission at the nanogap between silicon cleavage surfaces

Yuki Akura, Masaki Shimofuri, Amit Banerjee, Jun Hirotani, Toshiyuki Tsuchiya
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 022805 (2023)
https://doi.org/10.1116/6.0002456
Published: March 2023
View article titled, Gap distance dependence on field emission at the nanogap between silicon cleavage surfaces
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Journal Articles

Physics based model of an AlGaN/GaN vacuum field effect transistor

Editor’s Pick
N. Hernandez, M. Cahay, J. Ludwick, T. Back, H. Hall, J. O’Mara
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 053201 (2022)
https://doi.org/10.1116/6.0001959
Published: September 2022
View article titled, Physics based model of an AlGaN/GaN vacuum field effect transistor
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Includes: Supplementary data
Journal Articles

Scanning anode field emission microscopy of a single Si emitter

Girish Rughoobur, Olusoji O. Ilori, Akintunde I. Akinwande
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 042803 (2022)
https://doi.org/10.1116/6.0001938
Published: June 2022
View article titled, Scanning anode field emission microscopy of a single Si emitter
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Journal Articles

Designing MoS2 channel properties for analog memory in neuromorphic applications

Editor’s Pick
Vladislav Kurtash, Sebastian Thiele, Sobin Mathew, Heiko O. Jacobs, Joerg Pezoldt
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 030602 (2022)
https://doi.org/10.1116/6.0001815
Published: April 2022
View article titled, Designing MoS<sub>2</sub> channel properties for analog memory in neuromorphic applications
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Journal Articles

Interpreting the field emission equation for large area field emitters

Debabrata Biswas
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 023201 (2022)
https://doi.org/10.1116/6.0001683
Published: January 2022
View article titled, Interpreting the field emission equation for large area field emitters
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Journal Articles

Scaling in large area field emitters and the emission dimension

Rashbihari Rudra, Debabrata Biswas
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 39, 053204 (2021)
https://doi.org/10.1116/6.0001235
Published: August 2021
View article titled, Scaling in large area field emitters and the emission dimension
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Journal Articles

Effect of metallic Mg insertion in CoFeB/MgO interface perpendicular magnetic tunnel junction on tunnel magnetoresistance ratio observed by Synchrotron x-ray diffraction

Masaaki Niwa, Hiroaki Honjo, Loku Singgappulige Rosantha Kumara, Hirofumi Inoue, Shoji Ikeda, Hiroo Tajiri, Tetsuo Endoh
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 033801 (2020)
https://doi.org/10.1116/1.5144850
Published: May 2020
View article titled, Effect of metallic Mg insertion in CoFeB/MgO interface perpendicular magnetic tunnel junction on tunnel magnetoresistance ratio observed by Synchrotron x-ray diffraction
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Journal Articles

Why converting field emission voltages to macroscopic fields before making a Fowler-Nordheim plot has often led to spurious characterization results

Richard G. Forbes
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 051802 (2019)
https://doi.org/10.1116/1.5111455
Published: August 2019
View article titled, Why converting field emission voltages to macroscopic fields before making a Fowler-Nordheim plot has often led to spurious characterization results
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Journal Articles

Validation of current formula for a metallic nanotipped field emitter

Debabrata Biswas, Raghwendra Kumar
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 040603 (2019)
https://doi.org/10.1116/1.5110207
Published: June 2019
View article titled, Validation of current formula for a metallic nanotipped field emitter
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Journal Articles

Minimal domain size necessary to simulate the field enhancement factor numerically with specified precision

Thiago A. de Assis, Fernando F. Dall’Agnol
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 022902 (2019)
https://doi.org/10.1116/1.5063733
Published: February 2019
View article titled, Minimal domain size necessary to simulate the field enhancement factor numerically with specified precision
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Journal Articles

Work function consideration in vacuum field emission transistor design

Editor’s Pick
Jiwon Kim, Hyeongwan Oh, Jungsik Kim, Rock-Hyun Baek, Jin-Woo Han, M. Meyyappan, Jeong-Soo Lee
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 062203 (2017)
https://doi.org/10.1116/1.5000549
Published: November 2017
View article titled, Work function consideration in vacuum field emission transistor design
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Journal Articles

Current conduction mechanisms through thin tunnel oxide during erase operation of flash electrically erasable programmable read-only memory devices

Piyas Samanta
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 032202 (2017)
https://doi.org/10.1116/1.4981134
Published: April 2017
View article titled, Current conduction mechanisms through thin tunnel oxide during erase operation of flash electrically erasable programmable read-only memory devices
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Journal Articles

Negative bias temperature instability threshold voltage shift turnaround in SiGe channel MOSFETs

Kenneth E. Kambour, Camron Kouhestani, Patrick McMarr, Harold L. Hughes, Daniel R. Steinke, Roderick A. B. Devine
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 022201 (2015)
https://doi.org/10.1116/1.4907416
Published: February 2015
View article titled, Negative bias temperature instability threshold voltage shift turnaround in SiGe channel MOSFETs
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Journal Articles

Modeling of microwave diode on diamond like coating Si cathode

N. M. Goncharuk, N. F. Karushkin
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 03C110 (2015)
https://doi.org/10.1116/1.4906821
Published: February 2015
View article titled, Modeling of microwave diode on diamond like coating Si cathode
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Journal Articles

Effects of oxide thickness and temperature on dispersions in InGaAs MOS C-V characteristics

Han-Ping Chen, Jaesoo Ahn, Paul C. McIntyre, Yuan Taur
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 03D111 (2014)
https://doi.org/10.1116/1.4864618
Published: February 2014
View article titled, Effects of oxide thickness and temperature on dispersions in InGaAs MOS C-V characteristics
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